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SSM3K7002KF,LF

SSM3K7002KF,LF Toshiba Semiconductor and Storage

SSM3K7002KF_datasheet_en_20210528.pdf?did=35718&prodName=SSM3K7002KF Hersteller: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 60V 400MA S-MINI
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 400mA (Ta)
Rds On (Max) @ Id, Vgs: 1.5Ohm @ 100mA, 10V
Power Dissipation (Max): 270mW (Ta)
Vgs(th) (Max) @ Id: 2.1V @ 250µA
Supplier Device Package: S-Mini
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 0.6 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 40 pF @ 10 V
auf Bestellung 21000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
3000+0.1 EUR
15000+ 0.094 EUR
Mindestbestellmenge: 3000
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Technische Details SSM3K7002KF,LF Toshiba Semiconductor and Storage

Description: MOSFET N-CH 60V 400MA S-MINI, Packaging: Tape & Reel (TR), Package / Case: TO-236-3, SC-59, SOT-23-3, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 400mA (Ta), Rds On (Max) @ Id, Vgs: 1.5Ohm @ 100mA, 10V, Power Dissipation (Max): 270mW (Ta), Vgs(th) (Max) @ Id: 2.1V @ 250µA, Supplier Device Package: S-Mini, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 60 V, Gate Charge (Qg) (Max) @ Vgs: 0.6 nC @ 4.5 V, Input Capacitance (Ciss) (Max) @ Vds: 40 pF @ 10 V.

Weitere Produktangebote SSM3K7002KF,LF nach Preis ab 0.12 EUR bis 0.73 EUR

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SSM3K7002KF,LF SSM3K7002KF,LF Hersteller : Toshiba Semiconductor and Storage SSM3K7002KF_datasheet_en_20210528.pdf?did=35718&prodName=SSM3K7002KF Description: MOSFET N-CH 60V 400MA S-MINI
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 400mA (Ta)
Rds On (Max) @ Id, Vgs: 1.5Ohm @ 100mA, 10V
Power Dissipation (Max): 270mW (Ta)
Vgs(th) (Max) @ Id: 2.1V @ 250µA
Supplier Device Package: S-Mini
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 0.6 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 40 pF @ 10 V
auf Bestellung 25970 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
31+0.58 EUR
100+ 0.32 EUR
500+ 0.21 EUR
1000+ 0.14 EUR
Mindestbestellmenge: 31
SSM3K7002KF,LF SSM3K7002KF,LF Hersteller : Toshiba SSM3K7002KF_datasheet_en_20210528-1099188.pdf MOSFET Small-signal Nch MOSFET ID:0.4A
auf Bestellung 42893 Stücke:
Lieferzeit 14-28 Tag (e)
Anzahl Preis ohne MwSt
72+0.73 EUR
82+ 0.63 EUR
154+ 0.34 EUR
500+ 0.22 EUR
1000+ 0.15 EUR
3000+ 0.13 EUR
6000+ 0.12 EUR
Mindestbestellmenge: 72
SSM3K7002KF,LF SSM3K7002KF,LF Hersteller : Toshiba ssm3k7002kf_datasheet_en_20210528.pdf Trans MOSFET N-CH Si 60V 0.4A 3-Pin S-Mini T/R
auf Bestellung 2 Stücke:
Lieferzeit 14-21 Tag (e)
SSM3K7002KF,LF SSM3K7002KF,LF Hersteller : Toshiba ssm3k7002kf_datasheet_en_20210528.pdf Trans MOSFET N-CH Si 60V 0.4A 3-Pin S-Mini T/R
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