| Anzahl | Privatkunde |
|---|---|
| 5+ | 0.77 EUR |
| 10+ | 0.46 EUR |
| 100+ | 0.3 EUR |
| 500+ | 0.23 EUR |
| 1000+ | 0.2 EUR |
| 2000+ | 0.18 EUR |
| 4000+ | 0.14 EUR |
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Technische Details SSM5N15FE(TE85L,F) Toshiba
Description: MOSFET N-CH 30V 100MA ESV, Vgs(th) (Max) @ Id: 1.5V @ 100µA, Power Dissipation (Max): 150mW (Ta), Rds On (Max) @ Id, Vgs: 4Ohm @ 10mA, 4V, Current - Continuous Drain (Id) @ 25°C: 100mA (Ta), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: 150°C (TJ), Mounting Type: Surface Mount, Package / Case: SOT-553, Packaging: Tape & Reel (TR), Input Capacitance (Ciss) (Max) @ Vds: 7.8 pF @ 3 V, Drain to Source Voltage (Vdss): 30 V, Vgs (Max): ±20V, Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4V, Part Status: Active, Supplier Device Package: ESV.
Weitere Produktangebote SSM5N15FE(TE85L,F) nach Preis ab 0.18 EUR bis 0.94 EUR
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SSM5N15FE(TE85L,F) | Toshiba Semiconductor and Storage |
 Description: MOSFET N-CH 30V 100MA ESVInput Capacitance (Ciss) (Max) @ Vds: 7.8 pF @ 3 V Drain to Source Voltage (Vdss): 30 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4V Part Status: Active Supplier Device Package: ESV Vgs(th) (Max) @ Id: 1.5V @ 100µA Power Dissipation (Max): 150mW (Ta) Rds On (Max) @ Id, Vgs: 4Ohm @ 10mA, 4V Current - Continuous Drain (Id) @ 25°C: 100mA (Ta) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: SOT-553 Packaging: Cut Tape (CT) |
auf Bestellung 3975 Stücke: Lieferzeit 10-14 Tag (e) |
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| SSM5N15FE(TE85L,F) |
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Hersteller: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 30V 100MA ESV
Input Capacitance (Ciss) (Max) @ Vds: 7.8 pF @ 3 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4V
Part Status: Active
Supplier Device Package: ESV
Vgs(th) (Max) @ Id: 1.5V @ 100µA
Power Dissipation (Max): 150mW (Ta)
Rds On (Max) @ Id, Vgs: 4Ohm @ 10mA, 4V
Current - Continuous Drain (Id) @ 25°C: 100mA (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SOT-553
Packaging: Cut Tape (CT)
Description: MOSFET N-CH 30V 100MA ESV
Input Capacitance (Ciss) (Max) @ Vds: 7.8 pF @ 3 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4V
Part Status: Active
Supplier Device Package: ESV
Vgs(th) (Max) @ Id: 1.5V @ 100µA
Power Dissipation (Max): 150mW (Ta)
Rds On (Max) @ Id, Vgs: 4Ohm @ 10mA, 4V
Current - Continuous Drain (Id) @ 25°C: 100mA (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SOT-553
Packaging: Cut Tape (CT)
auf Bestellung 3975 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 23+ | 0.94 EUR |
| 30+ | 0.7 EUR |
| 100+ | 0.39 EUR |
| 500+ | 0.26 EUR |
| 1000+ | 0.2 EUR |
| 2000+ | 0.18 EUR |