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SSM5N15FE(TE85L,F)

SSM5N15FE(TE85L,F) Toshiba Semiconductor and Storage

SSM5N15FE_datasheet_en_20140301.pdf?did=19763&prodName=SSM5N15FE
Hersteller: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 30V 100MA ESV
Packaging: Cut Tape (CT)
Package / Case: SOT-553
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 100mA (Ta)
Rds On (Max) @ Id, Vgs: 4Ohm @ 10mA, 4V
Power Dissipation (Max): 150mW (Ta)
Vgs(th) (Max) @ Id: 1.5V @ 100µA
Supplier Device Package: ESV
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Input Capacitance (Ciss) (Max) @ Vds: 7.8 pF @ 3 V
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Technische Details SSM5N15FE(TE85L,F) Toshiba Semiconductor and Storage

Description: MOSFET N-CH 30V 100MA ESV, Packaging: Tape & Reel (TR), Package / Case: SOT-553, Mounting Type: Surface Mount, Operating Temperature: 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 100mA (Ta), Rds On (Max) @ Id, Vgs: 4Ohm @ 10mA, 4V, Power Dissipation (Max): 150mW (Ta), Vgs(th) (Max) @ Id: 1.5V @ 100µA, Supplier Device Package: ESV, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 30 V, Input Capacitance (Ciss) (Max) @ Vds: 7.8 pF @ 3 V.

Weitere Produktangebote SSM5N15FE(TE85L,F)

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SSM5N15FE(TE85L,F) SSM5N15FE(TE85L,F) Toshiba Semiconductor and Storage SSM5N15FE_datasheet_en_20140301.pdf?did=19763&prodName=SSM5N15FE Description: MOSFET N-CH 30V 100MA ESV
Packaging: Tape & Reel (TR)
Package / Case: SOT-553
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 100mA (Ta)
Rds On (Max) @ Id, Vgs: 4Ohm @ 10mA, 4V
Power Dissipation (Max): 150mW (Ta)
Vgs(th) (Max) @ Id: 1.5V @ 100µA
Supplier Device Package: ESV
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Input Capacitance (Ciss) (Max) @ Vds: 7.8 pF @ 3 V
Produkt ist nicht verfügbar
 Mindestbestellmenge: 4000 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
SSM5N15FE(TE85L,F) SSM5N15FE(TE85L,F) Toshiba AC6F79D4A663F4F52CADCE02FB4852EAD11A9EC5AFFEB5E7B16F7375904770A5.pdf MOSFETs N-Ch Sm Sig FET 0.1A 30V 2-in-1
Produkt ist nicht verfügbar
 Mindestbestellmenge: 5 Stücke
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SSM5N15FE(TE85L,F) SSM5N15FE_datasheet_en_20140301.pdf?did=19763&prodName=SSM5N15FE
SSM5N15FE(TE85L,F)
Hersteller: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 30V 100MA ESV
Packaging: Tape & Reel (TR)
Package / Case: SOT-553
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 100mA (Ta)
Rds On (Max) @ Id, Vgs: 4Ohm @ 10mA, 4V
Power Dissipation (Max): 150mW (Ta)
Vgs(th) (Max) @ Id: 1.5V @ 100µA
Supplier Device Package: ESV
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Input Capacitance (Ciss) (Max) @ Vds: 7.8 pF @ 3 V
Produkt ist nicht verfügbar
Mindestbestellmenge: 4000 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
SSM5N15FE(TE85L,F) AC6F79D4A663F4F52CADCE02FB4852EAD11A9EC5AFFEB5E7B16F7375904770A5.pdf
SSM5N15FE(TE85L,F)
Hersteller: Toshiba
MOSFETs N-Ch Sm Sig FET 0.1A 30V 2-in-1
Produkt ist nicht verfügbar
Mindestbestellmenge: 5 Stücke
Im Einkaufswagen  Stück im Wert von  UAH