SSM5N15FU,LF Toshiba Semiconductor and Storage

Description: MOSFET N-CH 30V 100MA USV, Input Capacitance (Ciss) (Max) @ Vds: 7.8 pF @ 3 V, Drain to Source Voltage (Vdss): 30 V, Vgs (Max): ±20V, Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4V, Part Status: Active, Supplier Device Package: 5-SSOP, Power Dissipation (Max): 200mW (Ta), Rds On (Max) @ Id, Vgs: 4Ohm @ 10mA, 4V, Current - Continuous Drain (Id) @ 25°C: 100mA (Ta), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: 150°C (TJ), Mounting Type: Surface Mount, Package / Case: 5-TSSOP, SC-70-5, SOT-353, Packaging: Tape & Reel (TR).