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SSM5P15FU,LF

SSM5P15FU,LF Toshiba Semiconductor and Storage

docget.jsp?did=22742&prodName=SSM5P15FU Hersteller: Toshiba Semiconductor and Storage
Description: MOSFET 2P-CH 30V 0.1A USV
Packaging: Cut Tape (CT)
Package / Case: 5-TSSOP, SC-70-5, SOT-353
Mounting Type: Surface Mount
Configuration: 2 P-Channel (Dual)
Operating Temperature: 150°C
Technology: MOSFET (Metal Oxide)
Power - Max: 200mW (Ta)
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 100mA (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 9.1pF @ 3V
Rds On (Max) @ Id, Vgs: 12Ohm @ 10mA, 4V
Vgs(th) (Max) @ Id: 1.7V @ 100µA
Supplier Device Package: USV
auf Bestellung 2956 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
32+0.56 EUR
51+0.35 EUR
100+0.22 EUR
500+0.16 EUR
1000+0.14 EUR
Mindestbestellmenge: 32
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Technische Details SSM5P15FU,LF Toshiba Semiconductor and Storage

Description: MOSFET 2P-CH 30V 0.1A USV, Packaging: Tape & Reel (TR), Package / Case: 5-TSSOP, SC-70-5, SOT-353, Mounting Type: Surface Mount, Configuration: 2 P-Channel (Dual), Operating Temperature: 150°C, Technology: MOSFET (Metal Oxide), Power - Max: 200mW (Ta), Drain to Source Voltage (Vdss): 30V, Current - Continuous Drain (Id) @ 25°C: 100mA (Ta), Input Capacitance (Ciss) (Max) @ Vds: 9.1pF @ 3V, Rds On (Max) @ Id, Vgs: 12Ohm @ 10mA, 4V, Vgs(th) (Max) @ Id: 1.7V @ 100µA, Supplier Device Package: USV.

Weitere Produktangebote SSM5P15FU,LF nach Preis ab 0.086 EUR bis 0.62 EUR

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SSM5P15FU,LF SSM5P15FU,LF Hersteller : Toshiba SSM5P15FU_datasheet_en_20140301-1316053.pdf MOSFETs LowON Res MOSFET ID=-0.1A VDSS=-30V
auf Bestellung 4770 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
5+0.62 EUR
10+0.38 EUR
100+0.18 EUR
1000+0.16 EUR
3000+0.12 EUR
9000+0.086 EUR
Mindestbestellmenge: 5
Im Einkaufswagen  Stück im Wert von  UAH
SSM5P15FU,LF SSM5P15FU,LF Hersteller : Toshiba Semiconductor and Storage docget.jsp?did=22742&prodName=SSM5P15FU Description: MOSFET 2P-CH 30V 0.1A USV
Packaging: Tape & Reel (TR)
Package / Case: 5-TSSOP, SC-70-5, SOT-353
Mounting Type: Surface Mount
Configuration: 2 P-Channel (Dual)
Operating Temperature: 150°C
Technology: MOSFET (Metal Oxide)
Power - Max: 200mW (Ta)
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 100mA (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 9.1pF @ 3V
Rds On (Max) @ Id, Vgs: 12Ohm @ 10mA, 4V
Vgs(th) (Max) @ Id: 1.7V @ 100µA
Supplier Device Package: USV
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH