| Anzahl | Privatkunde |
|---|---|
| 5+ | 0.77 EUR |
| 10+ | 0.35 EUR |
| 100+ | 0.3 EUR |
| 500+ | 0.23 EUR |
| 3000+ | 0.2 EUR |
| 6000+ | 0.17 EUR |
| 9000+ | 0.14 EUR |
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Technische Details SSM5P15FU,LF Toshiba
Description: MOSFET 2P-CH 30V 0.1A USV, Supplier Device Package: USV, Vgs(th) (Max) @ Id: 1.7V @ 100µA, Rds On (Max) @ Id, Vgs: 12Ohm @ 10mA, 4V, Input Capacitance (Ciss) (Max) @ Vds: 9.1pF @ 3V, Current - Continuous Drain (Id) @ 25°C: 100mA (Ta), Drain to Source Voltage (Vdss): 30V, Power - Max: 200mW (Ta), Technology: MOSFET (Metal Oxide), Operating Temperature: 150°C, Configuration: 2 P-Channel (Dual), Mounting Type: Surface Mount, Package / Case: 5-TSSOP, SC-70-5, SOT-353, Packaging: Tape & Reel (TR).
Weitere Produktangebote SSM5P15FU,LF nach Preis ab 0.23 EUR bis 0.8 EUR
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Privatkunde | ||||||||||
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SSM5P15FU,LF | Toshiba Semiconductor and Storage |
 Description: MOSFET 2P-CH 30V 0.1A USVPackaging: Cut Tape (CT) Supplier Device Package: USV Vgs(th) (Max) @ Id: 1.7V @ 100µA Rds On (Max) @ Id, Vgs: 12Ohm @ 10mA, 4V Input Capacitance (Ciss) (Max) @ Vds: 9.1pF @ 3V Current - Continuous Drain (Id) @ 25°C: 100mA (Ta) Drain to Source Voltage (Vdss): 30V Power - Max: 200mW (Ta) Technology: MOSFET (Metal Oxide) Operating Temperature: 150°C Configuration: 2 P-Channel (Dual) Mounting Type: Surface Mount Package / Case: 5-TSSOP, SC-70-5, SOT-353 |
auf Bestellung 2956 Stücke: Lieferzeit 10-14 Tag (e) |
|
| SSM5P15FU,LF |
|
Hersteller: Toshiba Semiconductor and Storage
Description: MOSFET 2P-CH 30V 0.1A USV
Packaging: Cut Tape (CT)
Supplier Device Package: USV
Vgs(th) (Max) @ Id: 1.7V @ 100µA
Rds On (Max) @ Id, Vgs: 12Ohm @ 10mA, 4V
Input Capacitance (Ciss) (Max) @ Vds: 9.1pF @ 3V
Current - Continuous Drain (Id) @ 25°C: 100mA (Ta)
Drain to Source Voltage (Vdss): 30V
Power - Max: 200mW (Ta)
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C
Configuration: 2 P-Channel (Dual)
Mounting Type: Surface Mount
Package / Case: 5-TSSOP, SC-70-5, SOT-353
Description: MOSFET 2P-CH 30V 0.1A USV
Packaging: Cut Tape (CT)
Supplier Device Package: USV
Vgs(th) (Max) @ Id: 1.7V @ 100µA
Rds On (Max) @ Id, Vgs: 12Ohm @ 10mA, 4V
Input Capacitance (Ciss) (Max) @ Vds: 9.1pF @ 3V
Current - Continuous Drain (Id) @ 25°C: 100mA (Ta)
Drain to Source Voltage (Vdss): 30V
Power - Max: 200mW (Ta)
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C
Configuration: 2 P-Channel (Dual)
Mounting Type: Surface Mount
Package / Case: 5-TSSOP, SC-70-5, SOT-353
auf Bestellung 2956 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 27+ | 0.8 EUR |
| 44+ | 0.48 EUR |
| 61+ | 0.35 EUR |
| 100+ | 0.3 EUR |
| 500+ | 0.23 EUR |