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SSM6H19NU,LF

SSM6H19NU,LF Toshiba Semiconductor and Storage

SSM6H19NU_datasheet_en_20210917.pdf?did=14715&prodName=SSM6H19NU Hersteller: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 40V 2A 6UDFN
Packaging: Tape & Reel (TR)
Package / Case: 6-UDFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 2A (Ta)
Rds On (Max) @ Id, Vgs: 185mOhm @ 1A, 8V
Power Dissipation (Max): 1W (Ta)
Vgs(th) (Max) @ Id: 1.2V @ 1mA
Supplier Device Package: 6-UDFN (2x2)
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 8V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 2.2 nC @ 4.2 V
Input Capacitance (Ciss) (Max) @ Vds: 130 pF @ 10 V
auf Bestellung 39000 Stücke:
Lieferzeit 21-28 Tag (e)
Anzahl Preis ohne MwSt
3000+0.23 EUR
6000+ 0.22 EUR
9000+ 0.2 EUR
Mindestbestellmenge: 3000
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Technische Details SSM6H19NU,LF Toshiba Semiconductor and Storage

Description: MOSFET N-CH 40V 2A 6UDFN, Packaging: Tape & Reel (TR), Package / Case: 6-UDFN Exposed Pad, Mounting Type: Surface Mount, Operating Temperature: 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 2A (Ta), Rds On (Max) @ Id, Vgs: 185mOhm @ 1A, 8V, Power Dissipation (Max): 1W (Ta), Vgs(th) (Max) @ Id: 1.2V @ 1mA, Supplier Device Package: 6-UDFN (2x2), Drive Voltage (Max Rds On, Min Rds On): 1.8V, 8V, Vgs (Max): ±12V, Drain to Source Voltage (Vdss): 40 V, Gate Charge (Qg) (Max) @ Vgs: 2.2 nC @ 4.2 V, Input Capacitance (Ciss) (Max) @ Vds: 130 pF @ 10 V.

Weitere Produktangebote SSM6H19NU,LF nach Preis ab 0.24 EUR bis 0.96 EUR

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SSM6H19NU,LF SSM6H19NU,LF Hersteller : Toshiba Semiconductor and Storage SSM6H19NU_datasheet_en_20210917.pdf?did=14715&prodName=SSM6H19NU Description: MOSFET N-CH 40V 2A 6UDFN
Packaging: Cut Tape (CT)
Package / Case: 6-UDFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 2A (Ta)
Rds On (Max) @ Id, Vgs: 185mOhm @ 1A, 8V
Power Dissipation (Max): 1W (Ta)
Vgs(th) (Max) @ Id: 1.2V @ 1mA
Supplier Device Package: 6-UDFN (2x2)
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 8V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 2.2 nC @ 4.2 V
Input Capacitance (Ciss) (Max) @ Vds: 130 pF @ 10 V
auf Bestellung 45777 Stücke:
Lieferzeit 21-28 Tag (e)
Anzahl Preis ohne MwSt
30+0.88 EUR
39+ 0.67 EUR
100+ 0.4 EUR
500+ 0.37 EUR
1000+ 0.25 EUR
Mindestbestellmenge: 30
SSM6H19NU,LF SSM6H19NU,LF Hersteller : Toshiba SSM6H19NU_datasheet_en_20210917-1150167.pdf MOSFET UDFN6 S-MOS TRSTR Pd: 0.5W F: 1MHz
auf Bestellung 27051 Stücke:
Lieferzeit 14-28 Tag (e)
Anzahl Preis ohne MwSt
55+0.96 EUR
67+ 0.79 EUR
100+ 0.53 EUR
500+ 0.4 EUR
1000+ 0.3 EUR
3000+ 0.27 EUR
9000+ 0.24 EUR
Mindestbestellmenge: 55