SSM6H19NU,LF Toshiba Semiconductor and Storage
Hersteller: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 40V 2A 6UDFN
Input Capacitance (Ciss) (Max) @ Vds: 130 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs: 2.2 nC @ 4.2 V
Drain to Source Voltage (Vdss): 40 V
Vgs (Max): ±12V
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 8V
Supplier Device Package: 6-UDFN (2x2)
Vgs(th) (Max) @ Id: 1.2V @ 1mA
Power Dissipation (Max): 1W (Ta)
Rds On (Max) @ Id, Vgs: 185mOhm @ 1A, 8V
Current - Continuous Drain (Id) @ 25°C: 2A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 6-UDFN Exposed Pad
Packaging: Tape & Reel (TR)
| Anzahl | Preis |
|---|---|
| 3000+ | 0.16 EUR |
| 6000+ | 0.15 EUR |
| 9000+ | 0.14 EUR |
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Technische Details SSM6H19NU,LF Toshiba Semiconductor and Storage
Description: MOSFET N-CH 40V 2A 6UDFN, Input Capacitance (Ciss) (Max) @ Vds: 130 pF @ 10 V, Gate Charge (Qg) (Max) @ Vgs: 2.2 nC @ 4.2 V, Drain to Source Voltage (Vdss): 40 V, Vgs (Max): ±12V, Drive Voltage (Max Rds On, Min Rds On): 1.8V, 8V, Supplier Device Package: 6-UDFN (2x2), Vgs(th) (Max) @ Id: 1.2V @ 1mA, Power Dissipation (Max): 1W (Ta), Rds On (Max) @ Id, Vgs: 185mOhm @ 1A, 8V, Current - Continuous Drain (Id) @ 25°C: 2A (Ta), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: 150°C (TJ), Mounting Type: Surface Mount, Package / Case: 6-UDFN Exposed Pad, Packaging: Tape & Reel (TR).
Weitere Produktangebote SSM6H19NU,LF nach Preis ab 0.13 EUR bis 0.76 EUR
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SSM6H19NU,LF | Hersteller : Toshiba |
MOSFETs UDFN6 S-MOS TRSTR Pd: 0.5W F: 1MHz |
auf Bestellung 29 Stücke: Lieferzeit 10-14 Tag (e) |
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SSM6H19NU,LF | Hersteller : Toshiba Semiconductor and Storage |
Description: MOSFET N-CH 40V 2A 6UDFN Input Capacitance (Ciss) (Max) @ Vds: 130 pF @ 10 V Gate Charge (Qg) (Max) @ Vgs: 2.2 nC @ 4.2 V Drain to Source Voltage (Vdss): 40 V Vgs (Max): ±12V Drive Voltage (Max Rds On, Min Rds On): 1.8V, 8V Supplier Device Package: 6-UDFN (2x2) Vgs(th) (Max) @ Id: 1.2V @ 1mA Power Dissipation (Max): 1W (Ta) Rds On (Max) @ Id, Vgs: 185mOhm @ 1A, 8V Current - Continuous Drain (Id) @ 25°C: 2A (Ta) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: 6-UDFN Exposed Pad Packaging: Cut Tape (CT) |
auf Bestellung 14900 Stücke: Lieferzeit 10-14 Tag (e) |
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