auf Bestellung 29 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 6+ | 0.54 EUR |
| 10+ | 0.35 EUR |
| 100+ | 0.24 EUR |
| 500+ | 0.2 EUR |
| 1000+ | 0.18 EUR |
| 3000+ | 0.14 EUR |
| 6000+ | 0.13 EUR |
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Technische Details SSM6H19NU,LF Toshiba
Description: MOSFET N-CH 40V 2A 6UDFN, Packaging: Tape & Reel (TR), Package / Case: 6-UDFN Exposed Pad, Mounting Type: Surface Mount, Operating Temperature: 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 2A (Ta), Rds On (Max) @ Id, Vgs: 185mOhm @ 1A, 8V, Power Dissipation (Max): 1W (Ta), Vgs(th) (Max) @ Id: 1.2V @ 1mA, Supplier Device Package: 6-UDFN (2x2), Drive Voltage (Max Rds On, Min Rds On): 1.8V, 8V, Vgs (Max): ±12V, Drain to Source Voltage (Vdss): 40 V, Gate Charge (Qg) (Max) @ Vgs: 2.2 nC @ 4.2 V, Input Capacitance (Ciss) (Max) @ Vds: 130 pF @ 10 V.
Weitere Produktangebote SSM6H19NU,LF nach Preis ab 0.2 EUR bis 0.63 EUR
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SSM6H19NU,LF | Hersteller : Toshiba Semiconductor and Storage |
 Description: MOSFET N-CH 40V 2A 6UDFNPackaging: Cut Tape (CT) Package / Case: 6-UDFN Exposed Pad Mounting Type: Surface Mount Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 2A (Ta) Rds On (Max) @ Id, Vgs: 185mOhm @ 1A, 8V Power Dissipation (Max): 1W (Ta) Vgs(th) (Max) @ Id: 1.2V @ 1mA Supplier Device Package: 6-UDFN (2x2) Drive Voltage (Max Rds On, Min Rds On): 1.8V, 8V Vgs (Max): ±12V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 2.2 nC @ 4.2 V Input Capacitance (Ciss) (Max) @ Vds: 130 pF @ 10 V |
auf Bestellung 5850 Stücke: Lieferzeit 10-14 Tag (e) |
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SSM6H19NU,LF | Hersteller : Toshiba Semiconductor and Storage |
Description: MOSFET N-CH 40V 2A 6UDFN Packaging: Tape & Reel (TR) Package / Case: 6-UDFN Exposed Pad Mounting Type: Surface Mount Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 2A (Ta) Rds On (Max) @ Id, Vgs: 185mOhm @ 1A, 8V Power Dissipation (Max): 1W (Ta) Vgs(th) (Max) @ Id: 1.2V @ 1mA Supplier Device Package: 6-UDFN (2x2) Drive Voltage (Max Rds On, Min Rds On): 1.8V, 8V Vgs (Max): ±12V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 2.2 nC @ 4.2 V Input Capacitance (Ciss) (Max) @ Vds: 130 pF @ 10 V |
Produkt ist nicht verfügbar |