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SSM6J207FE,LF

SSM6J207FE,LF Toshiba

SSM6J207FE_datasheet_en_20140301-1022870.pdf Hersteller: Toshiba
MOSFETs Small-signal FET 0.491Ohm -1.4A -30V
auf Bestellung 3365 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
4+0.78 EUR
10+0.54 EUR
100+0.34 EUR
500+0.27 EUR
1000+0.21 EUR
4000+0.19 EUR
8000+0.16 EUR
Mindestbestellmenge: 4
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Technische Details SSM6J207FE,LF Toshiba

Description: MOSFET P-CH 30V 1.4A ES6, Packaging: Tape & Reel (TR), Package / Case: SOT-563, SOT-666, Mounting Type: Surface Mount, Operating Temperature: 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: P-Channel, Current - Continuous Drain (Id) @ 25°C: 1.4A (Ta), Rds On (Max) @ Id, Vgs: 251mOhm @ 650mA, 10V, Power Dissipation (Max): 500mW (Ta), Vgs(th) (Max) @ Id: 2.6V @ 1mA, Supplier Device Package: ES6, Drive Voltage (Max Rds On, Min Rds On): 4V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 30 V, Input Capacitance (Ciss) (Max) @ Vds: 137 pF @ 15 V.

Weitere Produktangebote SSM6J207FE,LF nach Preis ab 0.21 EUR bis 0.86 EUR

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SSM6J207FE,LF SSM6J207FE,LF Hersteller : Toshiba Semiconductor and Storage Mosfets_Prod_Guide.pdf Description: MOSFET P-CH 30V 1.4A ES6
Packaging: Cut Tape (CT)
Package / Case: SOT-563, SOT-666
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 1.4A (Ta)
Rds On (Max) @ Id, Vgs: 251mOhm @ 650mA, 10V
Power Dissipation (Max): 500mW (Ta)
Vgs(th) (Max) @ Id: 2.6V @ 1mA
Supplier Device Package: ES6
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Input Capacitance (Ciss) (Max) @ Vds: 137 pF @ 15 V
auf Bestellung 3875 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
21+0.86 EUR
34+0.53 EUR
100+0.34 EUR
500+0.26 EUR
1000+0.23 EUR
2000+0.21 EUR
Mindestbestellmenge: 21
Im Einkaufswagen  Stück im Wert von  UAH
SSM6J207FE,LF SSM6J207FE,LF Hersteller : Toshiba Semiconductor and Storage Mosfets_Prod_Guide.pdf Description: MOSFET P-CH 30V 1.4A ES6
Packaging: Tape & Reel (TR)
Package / Case: SOT-563, SOT-666
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 1.4A (Ta)
Rds On (Max) @ Id, Vgs: 251mOhm @ 650mA, 10V
Power Dissipation (Max): 500mW (Ta)
Vgs(th) (Max) @ Id: 2.6V @ 1mA
Supplier Device Package: ES6
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Input Capacitance (Ciss) (Max) @ Vds: 137 pF @ 15 V
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Im Einkaufswagen  Stück im Wert von  UAH