auf Bestellung 16666 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 4+ | 0.84 EUR |
| 10+ | 0.63 EUR |
| 100+ | 0.47 EUR |
| 500+ | 0.37 EUR |
| 1000+ | 0.29 EUR |
| 2500+ | 0.26 EUR |
| 4000+ | 0.24 EUR |
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Technische Details SSM6J212FE,LF Toshiba
Description: MOSFET P-CH 20V 4A ES6, Packaging: Tape & Reel (TR), Package / Case: SOT-563, SOT-666, Mounting Type: Surface Mount, Operating Temperature: 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: P-Channel, Current - Continuous Drain (Id) @ 25°C: 4A (Ta), Rds On (Max) @ Id, Vgs: 40.7mOhm @ 3A, 4.5V, Power Dissipation (Max): 500mW (Ta), Vgs(th) (Max) @ Id: 1V @ 1mA, Supplier Device Package: ES6, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V, Vgs (Max): ±8V, Drain to Source Voltage (Vdss): 20 V, Gate Charge (Qg) (Max) @ Vgs: 14.1 nC @ 4.5 V, Input Capacitance (Ciss) (Max) @ Vds: 970 pF @ 10 V.
Weitere Produktangebote SSM6J212FE,LF
| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
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| SSM6J212FE,LF | Hersteller : Toshiba |
 Trans MOSFET P-CH Si 20V 4A 6-Pin ES T/R |
Produkt ist nicht verfügbar |
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| SSM6J212FE,LF | Hersteller : Toshiba |
Trans MOSFET P-CH Si 20V 4A 6-Pin ES T/R |
Produkt ist nicht verfügbar |
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SSM6J212FE,LF | Hersteller : Toshiba Semiconductor and Storage |
Description: MOSFET P-CH 20V 4A ES6 Packaging: Tape & Reel (TR) Package / Case: SOT-563, SOT-666 Mounting Type: Surface Mount Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 4A (Ta) Rds On (Max) @ Id, Vgs: 40.7mOhm @ 3A, 4.5V Power Dissipation (Max): 500mW (Ta) Vgs(th) (Max) @ Id: 1V @ 1mA Supplier Device Package: ES6 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V Vgs (Max): ±8V Drain to Source Voltage (Vdss): 20 V Gate Charge (Qg) (Max) @ Vgs: 14.1 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 970 pF @ 10 V |
Produkt ist nicht verfügbar |
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SSM6J212FE,LF | Hersteller : Toshiba Semiconductor and Storage |
Description: MOSFET P-CH 20V 4A ES6 Packaging: Cut Tape (CT) Package / Case: SOT-563, SOT-666 Mounting Type: Surface Mount Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 4A (Ta) Rds On (Max) @ Id, Vgs: 40.7mOhm @ 3A, 4.5V Power Dissipation (Max): 500mW (Ta) Vgs(th) (Max) @ Id: 1V @ 1mA Supplier Device Package: ES6 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V Vgs (Max): ±8V Drain to Source Voltage (Vdss): 20 V Gate Charge (Qg) (Max) @ Vgs: 14.1 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 970 pF @ 10 V |
Produkt ist nicht verfügbar |