auf Bestellung 3750 Stücke:
Lieferzeit 14-28 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 59+ | 0.89 EUR |
| 75+ | 0.7 EUR |
| 117+ | 0.45 EUR |
| 1000+ | 0.27 EUR |
| 4000+ | 0.23 EUR |
| 8000+ | 0.2 EUR |
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Technische Details SSM6J213FE(TE85L,F Toshiba
Description: MOSFET P CH 20V 2.6A ES6, Packaging: Tape & Reel (TR), Package / Case: SOT-563, SOT-666, Mounting Type: Surface Mount, Operating Temperature: 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: P-Channel, Current - Continuous Drain (Id) @ 25°C: 2.6A (Ta), Rds On (Max) @ Id, Vgs: 103mOhm @ 1.5A, 4.5V, Power Dissipation (Max): 500mW (Ta), Vgs(th) (Max) @ Id: 1V @ 1mA, Supplier Device Package: ES6, Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V, Vgs (Max): ±8V, Drain to Source Voltage (Vdss): 20 V, Gate Charge (Qg) (Max) @ Vgs: 4.7 nC @ 4.5 V, Input Capacitance (Ciss) (Max) @ Vds: 290 pF @ 10 V.
Weitere Produktangebote SSM6J213FE(TE85L,F
| Foto | Bezeichnung | Hersteller | Beschreibung |
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SSM6J213FE(TE85L,F | Hersteller : Toshiba |
 Trans MOSFET P-CH Si 20V 2.6A 6-Pin ES T/R |
Produkt ist nicht verfügbar |
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SSM6J213FE(TE85L,F | Hersteller : Toshiba Semiconductor and Storage |
Description: MOSFET P CH 20V 2.6A ES6 Packaging: Cut Tape (CT) Package / Case: SOT-563, SOT-666 Mounting Type: Surface Mount Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 2.6A (Ta) Rds On (Max) @ Id, Vgs: 103mOhm @ 1.5A, 4.5V Power Dissipation (Max): 500mW (Ta) Vgs(th) (Max) @ Id: 1V @ 1mA Supplier Device Package: ES6 Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V Vgs (Max): ±8V Drain to Source Voltage (Vdss): 20 V Gate Charge (Qg) (Max) @ Vgs: 4.7 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 290 pF @ 10 V |
Produkt ist nicht verfügbar |
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SSM6J213FE(TE85L,F | Hersteller : Toshiba Semiconductor and Storage |
Description: MOSFET P CH 20V 2.6A ES6 Packaging: Tape & Reel (TR) Package / Case: SOT-563, SOT-666 Mounting Type: Surface Mount Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 2.6A (Ta) Rds On (Max) @ Id, Vgs: 103mOhm @ 1.5A, 4.5V Power Dissipation (Max): 500mW (Ta) Vgs(th) (Max) @ Id: 1V @ 1mA Supplier Device Package: ES6 Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V Vgs (Max): ±8V Drain to Source Voltage (Vdss): 20 V Gate Charge (Qg) (Max) @ Vgs: 4.7 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 290 pF @ 10 V |
Produkt ist nicht verfügbar |