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SSM6J214FE(TE85L,F

SSM6J214FE(TE85L,F Toshiba Semiconductor and Storage

docget.jsp?did=7118&prodName=SSM6J214FE Hersteller: Toshiba Semiconductor and Storage
Description: MOSFET P-CH 30V 3.6A ES6
Packaging: Tape & Reel (TR)
Package / Case: SOT-563, SOT-666
Mounting Type: Surface Mount
Operating Temperature: 150°C
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 3.6A (Ta)
Rds On (Max) @ Id, Vgs: 50mOhm @ 3A, 10V
Power Dissipation (Max): 500mW (Ta)
Vgs(th) (Max) @ Id: 1.2V @ 1mA
Supplier Device Package: ES6
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 10V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 7.9 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 560 pF @ 15 V
auf Bestellung 16000 Stücke:
Lieferzeit 21-28 Tag (e)
Anzahl Preis ohne MwSt
4000+0.27 EUR
8000+ 0.26 EUR
12000+ 0.23 EUR
Mindestbestellmenge: 4000
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Technische Details SSM6J214FE(TE85L,F Toshiba Semiconductor and Storage

Description: MOSFET P-CH 30V 3.6A ES6, Packaging: Tape & Reel (TR), Package / Case: SOT-563, SOT-666, Mounting Type: Surface Mount, Operating Temperature: 150°C, Technology: MOSFET (Metal Oxide), FET Type: P-Channel, Current - Continuous Drain (Id) @ 25°C: 3.6A (Ta), Rds On (Max) @ Id, Vgs: 50mOhm @ 3A, 10V, Power Dissipation (Max): 500mW (Ta), Vgs(th) (Max) @ Id: 1.2V @ 1mA, Supplier Device Package: ES6, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 1.8V, 10V, Vgs (Max): ±12V, Drain to Source Voltage (Vdss): 30 V, Gate Charge (Qg) (Max) @ Vgs: 7.9 nC @ 4.5 V, Input Capacitance (Ciss) (Max) @ Vds: 560 pF @ 15 V.

Weitere Produktangebote SSM6J214FE(TE85L,F nach Preis ab 0.23 EUR bis 1.01 EUR

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SSM6J214FE(TE85L,F SSM6J214FE(TE85L,F Hersteller : Toshiba SSM6J214FE_datasheet_en_20140301-1316148.pdf MOSFET LowON Res MOSFET ID=-3.6A VDSS=-30V
auf Bestellung 11565 Stücke:
Lieferzeit 14-28 Tag (e)
Anzahl Preis ohne MwSt
54+0.97 EUR
65+ 0.8 EUR
100+ 0.55 EUR
1000+ 0.31 EUR
4000+ 0.28 EUR
8000+ 0.25 EUR
24000+ 0.23 EUR
Mindestbestellmenge: 54
SSM6J214FE(TE85L,F SSM6J214FE(TE85L,F Hersteller : Toshiba Semiconductor and Storage docget.jsp?did=7118&prodName=SSM6J214FE Description: MOSFET P-CH 30V 3.6A ES6
Packaging: Cut Tape (CT)
Package / Case: SOT-563, SOT-666
Mounting Type: Surface Mount
Operating Temperature: 150°C
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 3.6A (Ta)
Rds On (Max) @ Id, Vgs: 50mOhm @ 3A, 10V
Power Dissipation (Max): 500mW (Ta)
Vgs(th) (Max) @ Id: 1.2V @ 1mA
Supplier Device Package: ES6
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 10V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 7.9 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 560 pF @ 15 V
auf Bestellung 19825 Stücke:
Lieferzeit 21-28 Tag (e)
Anzahl Preis ohne MwSt
26+1.01 EUR
34+ 0.78 EUR
100+ 0.47 EUR
500+ 0.43 EUR
1000+ 0.3 EUR
2000+ 0.27 EUR
Mindestbestellmenge: 26
SSM6J214FE(TE85L,F SSM6J214FE(TE85L,F Hersteller : Toshiba 6docget.jsppidssm6j214felangentypedatasheet.jsppidssm6j214felangen.pdf Trans MOSFET P-CH Si 30V 3.6A 6-Pin ES T/R
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