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SSM6J215FE(TE85L,F

SSM6J215FE(TE85L,F Toshiba Semiconductor and Storage

docget.jsp?did=13425&prodName=SSM6J215FE
Hersteller: Toshiba Semiconductor and Storage
Description: MOSFET P CH 20V 3.4A ES6
Packaging: Tape & Reel (TR)
Package / Case: SOT-563, SOT-666
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 3.4A (Ta)
Rds On (Max) @ Id, Vgs: 59mOhm @ 3A, 4.5V
Power Dissipation (Max): 500mW (Ta)
Vgs(th) (Max) @ Id: 1V @ 1mA
Supplier Device Package: ES6
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 10.4 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 630 pF @ 10 V
auf Bestellung 4000 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
4000+0.2 EUR
Mindestbestellmenge: 4000 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
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Technische Details SSM6J215FE(TE85L,F Toshiba Semiconductor and Storage

Description: MOSFET P CH 20V 3.4A ES6, Packaging: Tape & Reel (TR), Package / Case: SOT-563, SOT-666, Mounting Type: Surface Mount, Operating Temperature: 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: P-Channel, Current - Continuous Drain (Id) @ 25°C: 3.4A (Ta), Rds On (Max) @ Id, Vgs: 59mOhm @ 3A, 4.5V, Power Dissipation (Max): 500mW (Ta), Vgs(th) (Max) @ Id: 1V @ 1mA, Supplier Device Package: ES6, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V, Vgs (Max): ±8V, Drain to Source Voltage (Vdss): 20 V, Gate Charge (Qg) (Max) @ Vgs: 10.4 nC @ 4.5 V, Input Capacitance (Ciss) (Max) @ Vds: 630 pF @ 10 V.

Weitere Produktangebote SSM6J215FE(TE85L,F nach Preis ab 0.2 EUR bis 1.02 EUR

Foto Bezeichnung Hersteller Beschreibung Verfügbarkeit Privatkunde
SSM6J215FE(TE85L,F SSM6J215FE(TE85L,F Toshiba Semiconductor and Storage docget.jsp?did=13425&prodName=SSM6J215FE Description: MOSFET P CH 20V 3.4A ES6
Packaging: Cut Tape (CT)
Package / Case: SOT-563, SOT-666
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 3.4A (Ta)
Rds On (Max) @ Id, Vgs: 59mOhm @ 3A, 4.5V
Power Dissipation (Max): 500mW (Ta)
Vgs(th) (Max) @ Id: 1V @ 1mA
Supplier Device Package: ES6
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 10.4 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 630 pF @ 10 V
auf Bestellung 8278 Stücke:
Lieferzeit 10-14 Tag (e)
22+0.96 EUR
36+0.58 EUR
100+0.37 EUR
500+0.27 EUR
1000+0.25 EUR
2000+0.23 EUR
Mindestbestellmenge: 22 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
SSM6J215FE(TE85L,F SSM6J215FE(TE85L,F Toshiba 4B9B950124EDDBC18043058C8EFFD14D658A7D0F51834706E42668DE4B99259D.pdf MOSFETs P-Ch U-MOS VI FET ID -3.4A -20V 630pF
auf Bestellung 2818 Stücke:
Lieferzeit 10-14 Tag (e)
4+1.02 EUR
10+0.64 EUR
100+0.4 EUR
500+0.31 EUR
1000+0.27 EUR
2000+0.25 EUR
4000+0.2 EUR
Mindestbestellmenge: 4 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
SSM6J215FE(TE85L,F docget.jsp?did=13425&prodName=SSM6J215FE
SSM6J215FE(TE85L,F
Hersteller: Toshiba Semiconductor and Storage
Description: MOSFET P CH 20V 3.4A ES6
Packaging: Cut Tape (CT)
Package / Case: SOT-563, SOT-666
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 3.4A (Ta)
Rds On (Max) @ Id, Vgs: 59mOhm @ 3A, 4.5V
Power Dissipation (Max): 500mW (Ta)
Vgs(th) (Max) @ Id: 1V @ 1mA
Supplier Device Package: ES6
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 10.4 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 630 pF @ 10 V
auf Bestellung 8278 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
22+0.96 EUR
36+0.58 EUR
100+0.37 EUR
500+0.27 EUR
1000+0.25 EUR
2000+0.23 EUR
Mindestbestellmenge: 22 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
SSM6J215FE(TE85L,F 4B9B950124EDDBC18043058C8EFFD14D658A7D0F51834706E42668DE4B99259D.pdf
SSM6J215FE(TE85L,F
Hersteller: Toshiba
MOSFETs P-Ch U-MOS VI FET ID -3.4A -20V 630pF
auf Bestellung 2818 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
4+1.02 EUR
10+0.64 EUR
100+0.4 EUR
500+0.31 EUR
1000+0.27 EUR
2000+0.25 EUR
4000+0.2 EUR
Mindestbestellmenge: 4 Stücke
Im Einkaufswagen  Stück im Wert von  UAH