Produkte > TOSHIBA > SSM6J215FE(TE85L,F
SSM6J215FE(TE85L,F

SSM6J215FE(TE85L,F Toshiba

SSM6J215FE_datasheet_en_20140404-1150801.pdf Hersteller: Toshiba
MOSFET P-Ch U-MOS VI FET ID -3.4A -20V 630pF
auf Bestellung 3356 Stücke:
Lieferzeit 14-28 Tag (e)
Anzahl Preis ohne MwSt
54+0.97 EUR
68+ 0.77 EUR
106+ 0.49 EUR
1000+ 0.29 EUR
4000+ 0.27 EUR
8000+ 0.22 EUR
Mindestbestellmenge: 54
Produktrezensionen
Produktbewertung abgeben

Technische Details SSM6J215FE(TE85L,F Toshiba

Description: MOSFET P CH 20V 3.4A ES6, Packaging: Tape & Reel (TR), Package / Case: SOT-563, SOT-666, Mounting Type: Surface Mount, Operating Temperature: 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: P-Channel, Current - Continuous Drain (Id) @ 25°C: 3.4A (Ta), Rds On (Max) @ Id, Vgs: 59mOhm @ 3A, 4.5V, Power Dissipation (Max): 500mW (Ta), Vgs(th) (Max) @ Id: 1V @ 1mA, Supplier Device Package: ES6, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V, Vgs (Max): ±8V, Drain to Source Voltage (Vdss): 20 V, Gate Charge (Qg) (Max) @ Vgs: 10.4 nC @ 4.5 V, Input Capacitance (Ciss) (Max) @ Vds: 630 pF @ 10 V.

Weitere Produktangebote SSM6J215FE(TE85L,F nach Preis ab 0.93 EUR bis 1.09 EUR

Foto Bezeichnung Hersteller Beschreibung Verfügbarkeit
Preis ohne MwSt
SSM6J215FE(TE85L,F SSM6J215FE(TE85L,F Hersteller : Toshiba Semiconductor and Storage docget.jsp?did=13425&prodName=SSM6J215FE Description: MOSFET P CH 20V 3.4A ES6
Packaging: Cut Tape (CT)
Package / Case: SOT-563, SOT-666
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 3.4A (Ta)
Rds On (Max) @ Id, Vgs: 59mOhm @ 3A, 4.5V
Power Dissipation (Max): 500mW (Ta)
Vgs(th) (Max) @ Id: 1V @ 1mA
Supplier Device Package: ES6
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 10.4 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 630 pF @ 10 V
auf Bestellung 87 Stücke:
Lieferzeit 21-28 Tag (e)
Anzahl Preis ohne MwSt
24+1.09 EUR
28+ 0.93 EUR
Mindestbestellmenge: 24
SSM6J215FE(TE85L,F SSM6J215FE(TE85L,F Hersteller : Toshiba Semiconductor and Storage docget.jsp?did=13425&prodName=SSM6J215FE Description: MOSFET P CH 20V 3.4A ES6
Packaging: Tape & Reel (TR)
Package / Case: SOT-563, SOT-666
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 3.4A (Ta)
Rds On (Max) @ Id, Vgs: 59mOhm @ 3A, 4.5V
Power Dissipation (Max): 500mW (Ta)
Vgs(th) (Max) @ Id: 1V @ 1mA
Supplier Device Package: ES6
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 10.4 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 630 pF @ 10 V
Produkt ist nicht verfügbar