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SSM6J414TU,LF

SSM6J414TU,LF Toshiba

SSM6J414TU_datasheet_en_20140404-1916148.pdf Hersteller: Toshiba
MOSFET P-Ch U-MOS VI FET ID -6A -20V 1650pF
auf Bestellung 4472 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
4+0.79 EUR
10+0.65 EUR
100+0.45 EUR
500+0.33 EUR
1000+0.25 EUR
3000+0.23 EUR
9000+0.20 EUR
Mindestbestellmenge: 4
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Technische Details SSM6J414TU,LF Toshiba

Description: MOSFET P CH 20V 6A UF6, Packaging: Tape & Reel (TR), Package / Case: 6-SMD, Flat Leads, Mounting Type: Surface Mount, Operating Temperature: 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: P-Channel, Current - Continuous Drain (Id) @ 25°C: 6A (Ta), Rds On (Max) @ Id, Vgs: 22.5mOhm @ 6A, 4.5V, Power Dissipation (Max): 1W (Ta), Vgs(th) (Max) @ Id: 1V @ 1mA, Supplier Device Package: UF6, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V, Vgs (Max): ±8V, Drain to Source Voltage (Vdss): 20 V, Gate Charge (Qg) (Max) @ Vgs: 23.1 nC @ 4.5 V, Input Capacitance (Ciss) (Max) @ Vds: 1650 pF @ 10 V.

Weitere Produktangebote SSM6J414TU,LF nach Preis ab 0.25 EUR bis 0.88 EUR

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SSM6J414TU,LF SSM6J414TU,LF Hersteller : Toshiba Semiconductor and Storage docget.jsp?did=13022&prodName=SSM6J414TU Description: MOSFET P CH 20V 6A UF6
Packaging: Cut Tape (CT)
Package / Case: 6-SMD, Flat Leads
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 6A (Ta)
Rds On (Max) @ Id, Vgs: 22.5mOhm @ 6A, 4.5V
Power Dissipation (Max): 1W (Ta)
Vgs(th) (Max) @ Id: 1V @ 1mA
Supplier Device Package: UF6
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 23.1 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 1650 pF @ 10 V
auf Bestellung 2062 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
20+0.88 EUR
31+0.58 EUR
100+0.37 EUR
500+0.28 EUR
1000+0.25 EUR
Mindestbestellmenge: 20
Im Einkaufswagen  Stück im Wert von  UAH
SSM6J414TU,LF SSM6J414TU,LF Hersteller : Toshiba Semiconductor and Storage docget.jsp?did=13022&prodName=SSM6J414TU Description: MOSFET P CH 20V 6A UF6
Packaging: Tape & Reel (TR)
Package / Case: 6-SMD, Flat Leads
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 6A (Ta)
Rds On (Max) @ Id, Vgs: 22.5mOhm @ 6A, 4.5V
Power Dissipation (Max): 1W (Ta)
Vgs(th) (Max) @ Id: 1V @ 1mA
Supplier Device Package: UF6
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 23.1 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 1650 pF @ 10 V
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Im Einkaufswagen  Stück im Wert von  UAH