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SSM6J422TU,LXHF

SSM6J422TU,LXHF Toshiba Semiconductor and Storage

SSM6J422TU_datasheet_en_20210528.pdf?did=61137&prodName=SSM6J422TU
Hersteller: Toshiba Semiconductor and Storage
Description: SMOS P-CH VDSS=-20V, VGSS=+6/-8V
Rds On (Max) @ Id, Vgs: 42.7mOhm @ 3A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 4A (Ta)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C
Mounting Type: Surface Mount
Package / Case: 6-SMD, Flat Leads
Packaging: Cut Tape (CT)
Input Capacitance (Ciss) (Max) @ Vds: 840 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs: 12.8 nC @ 4.5 V
Drain to Source Voltage (Vdss): 20 V
Vgs (Max): +6V, -8V
Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
Part Status: Active
Supplier Device Package: UF6
Vgs(th) (Max) @ Id: 1V @ 1mA
Power Dissipation (Max): 1W (Ta)
auf Bestellung 2567 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
25+0.72 EUR
29+0.62 EUR
100+0.47 EUR
500+0.37 EUR
1000+0.28 EUR
Mindestbestellmenge: 25
Im Einkaufswagen  Stück im Wert von  UAH
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Technische Details SSM6J422TU,LXHF Toshiba Semiconductor and Storage

Description: SMOS P-CH VDSS=-20V, VGSS=+6/-8V, Input Capacitance (Ciss) (Max) @ Vds: 840 pF @ 10 V, Gate Charge (Qg) (Max) @ Vgs: 12.8 nC @ 4.5 V, Drain to Source Voltage (Vdss): 20 V, Vgs (Max): +6V, -8V, Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V, Part Status: Active, Supplier Device Package: UF6, Vgs(th) (Max) @ Id: 1V @ 1mA, Power Dissipation (Max): 1W (Ta), Rds On (Max) @ Id, Vgs: 42.7mOhm @ 3A, 4.5V, Current - Continuous Drain (Id) @ 25°C: 4A (Ta), FET Type: P-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: 150°C, Mounting Type: Surface Mount, Package / Case: 6-SMD, Flat Leads, Packaging: Tape & Reel (TR).

Weitere Produktangebote SSM6J422TU,LXHF nach Preis ab 0.24 EUR bis 1.21 EUR

Foto Bezeichnung Hersteller Beschreibung Verfügbarkeit
Preis
SSM6J422TU,LXHF SSM6J422TU,LXHF Hersteller : Toshiba 9480B6B274C0E75939AD0D5E2B8DF1925D488197EDD97A26CDF2EAB7026E499C.pdf MOSFETs SMOS P-ch VDSS=-20V, VGSS=+6/-8V, ID=-4.
auf Bestellung 8560 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3+1.21 EUR
10+1.12 EUR
100+0.78 EUR
500+0.49 EUR
1000+0.36 EUR
3000+0.27 EUR
6000+0.24 EUR
Mindestbestellmenge: 3
Im Einkaufswagen  Stück im Wert von  UAH
SSM6J422TU,LXHF SSM6J422TU,LXHF Hersteller : Toshiba Semiconductor and Storage SSM6J422TU_datasheet_en_20210528.pdf?did=61137&prodName=SSM6J422TU Description: SMOS P-CH VDSS=-20V, VGSS=+6/-8V
Input Capacitance (Ciss) (Max) @ Vds: 840 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs: 12.8 nC @ 4.5 V
Drain to Source Voltage (Vdss): 20 V
Vgs (Max): +6V, -8V
Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
Part Status: Active
Supplier Device Package: UF6
Vgs(th) (Max) @ Id: 1V @ 1mA
Power Dissipation (Max): 1W (Ta)
Rds On (Max) @ Id, Vgs: 42.7mOhm @ 3A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 4A (Ta)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C
Mounting Type: Surface Mount
Package / Case: 6-SMD, Flat Leads
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH