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SSM6J501NU,LF

SSM6J501NU,LF Toshiba Semiconductor and Storage

docget.jsp?did=6841&prodName=SSM6J501NU Hersteller: Toshiba Semiconductor and Storage
Description: MOSFET P-CH 20V 10A 6UDFNB
Packaging: Tape & Reel (TR)
Package / Case: 6-WDFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 10A (Ta)
Rds On (Max) @ Id, Vgs: 15.3mOhm @ 4A, 4.5V
Power Dissipation (Max): 1W (Ta)
Vgs(th) (Max) @ Id: 1V @ 1mA
Supplier Device Package: 6-UDFNB (2x2)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 29.9 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 2600 pF @ 10 V
auf Bestellung 39000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3000+0.21 EUR
6000+0.19 EUR
9000+0.16 EUR
Mindestbestellmenge: 3000
Im Einkaufswagen  Stück im Wert von  UAH
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Technische Details SSM6J501NU,LF Toshiba Semiconductor and Storage

Description: MOSFET P-CH 20V 10A 6UDFNB, Packaging: Tape & Reel (TR), Package / Case: 6-WDFN Exposed Pad, Mounting Type: Surface Mount, Operating Temperature: 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: P-Channel, Current - Continuous Drain (Id) @ 25°C: 10A (Ta), Rds On (Max) @ Id, Vgs: 15.3mOhm @ 4A, 4.5V, Power Dissipation (Max): 1W (Ta), Vgs(th) (Max) @ Id: 1V @ 1mA, Supplier Device Package: 6-UDFNB (2x2), Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V, Vgs (Max): ±8V, Drain to Source Voltage (Vdss): 20 V, Gate Charge (Qg) (Max) @ Vgs: 29.9 nC @ 4.5 V, Input Capacitance (Ciss) (Max) @ Vds: 2600 pF @ 10 V.

Weitere Produktangebote SSM6J501NU,LF nach Preis ab 0.18 EUR bis 0.9 EUR

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SSM6J501NU,LF SSM6J501NU,LF Hersteller : Toshiba Semiconductor and Storage docget.jsp?did=6841&prodName=SSM6J501NU Description: MOSFET P-CH 20V 10A 6UDFNB
Packaging: Cut Tape (CT)
Package / Case: 6-WDFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 10A (Ta)
Rds On (Max) @ Id, Vgs: 15.3mOhm @ 4A, 4.5V
Power Dissipation (Max): 1W (Ta)
Vgs(th) (Max) @ Id: 1V @ 1mA
Supplier Device Package: 6-UDFNB (2x2)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 29.9 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 2600 pF @ 10 V
auf Bestellung 39093 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
23+0.79 EUR
36+0.49 EUR
100+0.37 EUR
500+0.28 EUR
1000+0.25 EUR
Mindestbestellmenge: 23
Im Einkaufswagen  Stück im Wert von  UAH
SSM6J501NU,LF SSM6J501NU,LF Hersteller : Toshiba SSM6J501NU_datasheet_en_20140301-1916531.pdf MOSFETs PWR MGT 1.5V Drive P-Ch MOS -20V
auf Bestellung 9708 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
4+0.9 EUR
10+0.5 EUR
100+0.34 EUR
500+0.3 EUR
1000+0.27 EUR
3000+0.21 EUR
9000+0.18 EUR
Mindestbestellmenge: 4
Im Einkaufswagen  Stück im Wert von  UAH
SSM6J501NU,LF Hersteller : TOSHIBA docget.jsp?did=6841&prodName=SSM6J501NU SSM6J501NU SMD P channel transistors
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH