SSM6J502NU,LF Toshiba Semiconductor and Storage
Hersteller: Toshiba Semiconductor and StorageDescription: MOSFET P-CH 20V 6A 6UDFNB
Packaging: Tape & Reel (TR)
Package / Case: 6-WDFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 6A (Ta)
Rds On (Max) @ Id, Vgs: 23.1mOhm @ 4A, 4.5V
Power Dissipation (Max): 1W (Ta)
Vgs(th) (Max) @ Id: 1V @ 1mA
Supplier Device Package: 6-UDFNB (2x2)
Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 24.8 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 1800 pF @ 10 V
auf Bestellung 9000 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 3000+ | 0.22 EUR |
| 6000+ | 0.2 EUR |
| 9000+ | 0.19 EUR |
Produktrezensionen
Produktbewertung abgeben
Technische Details SSM6J502NU,LF Toshiba Semiconductor and Storage
Description: MOSFET P-CH 20V 6A 6UDFNB, Packaging: Tape & Reel (TR), Package / Case: 6-WDFN Exposed Pad, Mounting Type: Surface Mount, Operating Temperature: 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: P-Channel, Current - Continuous Drain (Id) @ 25°C: 6A (Ta), Rds On (Max) @ Id, Vgs: 23.1mOhm @ 4A, 4.5V, Power Dissipation (Max): 1W (Ta), Vgs(th) (Max) @ Id: 1V @ 1mA, Supplier Device Package: 6-UDFNB (2x2), Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V, Vgs (Max): ±8V, Drain to Source Voltage (Vdss): 20 V, Gate Charge (Qg) (Max) @ Vgs: 24.8 nC @ 4.5 V, Input Capacitance (Ciss) (Max) @ Vds: 1800 pF @ 10 V.
Weitere Produktangebote SSM6J502NU,LF nach Preis ab 0.17 EUR bis 0.97 EUR
| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis | ||||||||||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
 |
SSM6J502NU,LF | Hersteller : Toshiba |
MOSFETs SM Sig P-CH MOS ID -6A -20V -8 VGSS |
auf Bestellung 3065 Stücke: Lieferzeit 10-14 Tag (e) |
|
||||||||||||||||
|
|
SSM6J502NU,LF | Hersteller : Toshiba Semiconductor and Storage |
Description: MOSFET P-CH 20V 6A 6UDFNB Packaging: Cut Tape (CT) Package / Case: 6-WDFN Exposed Pad Mounting Type: Surface Mount Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 6A (Ta) Rds On (Max) @ Id, Vgs: 23.1mOhm @ 4A, 4.5V Power Dissipation (Max): 1W (Ta) Vgs(th) (Max) @ Id: 1V @ 1mA Supplier Device Package: 6-UDFNB (2x2) Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V Vgs (Max): ±8V Drain to Source Voltage (Vdss): 20 V Gate Charge (Qg) (Max) @ Vgs: 24.8 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 1800 pF @ 10 V |
auf Bestellung 9005 Stücke: Lieferzeit 10-14 Tag (e) |
|