SSM6J502NU,LF Toshiba Semiconductor and Storage
Hersteller: Toshiba Semiconductor and Storage
Description: MOSFET P-CH 20V 6A 6UDFNB
Input Capacitance (Ciss) (Max) @ Vds: 1800 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs: 24.8 nC @ 4.5 V
Drain to Source Voltage (Vdss): 20 V
Vgs (Max): ±8V
Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
Supplier Device Package: 6-UDFNB (2x2)
Vgs(th) (Max) @ Id: 1V @ 1mA
Power Dissipation (Max): 1W (Ta)
Rds On (Max) @ Id, Vgs: 23.1mOhm @ 4A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 6A (Ta)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 6-WDFN Exposed Pad
Packaging: Tape & Reel (TR)
| Anzahl | Preis |
|---|---|
| 3000+ | 0.22 EUR |
| 6000+ | 0.2 EUR |
| 9000+ | 0.19 EUR |
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Technische Details SSM6J502NU,LF Toshiba Semiconductor and Storage
Description: MOSFET P-CH 20V 6A 6UDFNB, Input Capacitance (Ciss) (Max) @ Vds: 1800 pF @ 10 V, Gate Charge (Qg) (Max) @ Vgs: 24.8 nC @ 4.5 V, Drain to Source Voltage (Vdss): 20 V, Vgs (Max): ±8V, Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V, Supplier Device Package: 6-UDFNB (2x2), Vgs(th) (Max) @ Id: 1V @ 1mA, Power Dissipation (Max): 1W (Ta), Rds On (Max) @ Id, Vgs: 23.1mOhm @ 4A, 4.5V, Current - Continuous Drain (Id) @ 25°C: 6A (Ta), FET Type: P-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: 150°C (TJ), Mounting Type: Surface Mount, Package / Case: 6-WDFN Exposed Pad, Packaging: Tape & Reel (TR).
Weitere Produktangebote SSM6J502NU,LF nach Preis ab 0.17 EUR bis 0.97 EUR
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SSM6J502NU,LF | Hersteller : Toshiba |
MOSFETs SM Sig P-CH MOS ID -6A -20V -8 VGSS |
auf Bestellung 3065 Stücke: Lieferzeit 10-14 Tag (e) |
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SSM6J502NU,LF | Hersteller : Toshiba Semiconductor and Storage |
Description: MOSFET P-CH 20V 6A 6UDFNB Input Capacitance (Ciss) (Max) @ Vds: 1800 pF @ 10 V Gate Charge (Qg) (Max) @ Vgs: 24.8 nC @ 4.5 V Drain to Source Voltage (Vdss): 20 V Vgs (Max): ±8V Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V Supplier Device Package: 6-UDFNB (2x2) Vgs(th) (Max) @ Id: 1V @ 1mA Power Dissipation (Max): 1W (Ta) Rds On (Max) @ Id, Vgs: 23.1mOhm @ 4A, 4.5V Current - Continuous Drain (Id) @ 25°C: 6A (Ta) FET Type: P-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: 6-WDFN Exposed Pad Packaging: Cut Tape (CT) |
auf Bestellung 9005 Stücke: Lieferzeit 10-14 Tag (e) |
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