
SSM6J503NU,LF(T TOSHIBA

Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -6A; 1W; uDFN6
Kind of channel: enhancement
Type of transistor: P-MOSFET
Kind of package: reel; tape
Case: uDFN6
Mounting: SMD
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -6A
Gate charge: 12.8nC
On-state resistance: 89.6mΩ
Power dissipation: 1W
Gate-source voltage: ±8V
Anzahl je Verpackung: 1 Stücke
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Technische Details SSM6J503NU,LF(T TOSHIBA
Category: SMD P channel transistors, Description: Transistor: P-MOSFET; unipolar; -20V; -6A; 1W; uDFN6, Kind of channel: enhancement, Type of transistor: P-MOSFET, Kind of package: reel; tape, Case: uDFN6, Mounting: SMD, Polarisation: unipolar, Drain-source voltage: -20V, Drain current: -6A, Gate charge: 12.8nC, On-state resistance: 89.6mΩ, Power dissipation: 1W, Gate-source voltage: ±8V, Anzahl je Verpackung: 1 Stücke.
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SSM6J503NU,LF(T | Hersteller : TOSHIBA |
![]() Description: Transistor: P-MOSFET; unipolar; -20V; -6A; 1W; uDFN6 Kind of channel: enhancement Type of transistor: P-MOSFET Kind of package: reel; tape Case: uDFN6 Mounting: SMD Polarisation: unipolar Drain-source voltage: -20V Drain current: -6A Gate charge: 12.8nC On-state resistance: 89.6mΩ Power dissipation: 1W Gate-source voltage: ±8V |
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