SSM6J503NU,LF(T TOSHIBA
Hersteller: TOSHIBACategory: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -6A; 1W; uDFN6
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -6A
Power dissipation: 1W
Case: uDFN6
Gate-source voltage: ±8V
On-state resistance: 89.6mΩ
Mounting: SMD
Gate charge: 12.8nC
Kind of package: reel; tape
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
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Technische Details SSM6J503NU,LF(T TOSHIBA
Category: SMD P channel transistors, Description: Transistor: P-MOSFET; unipolar; -20V; -6A; 1W; uDFN6, Type of transistor: P-MOSFET, Polarisation: unipolar, Drain-source voltage: -20V, Drain current: -6A, Power dissipation: 1W, Case: uDFN6, Gate-source voltage: ±8V, On-state resistance: 89.6mΩ, Mounting: SMD, Gate charge: 12.8nC, Kind of package: reel; tape, Kind of channel: enhancement, Anzahl je Verpackung: 1 Stücke.
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SSM6J503NU,LF(T | Hersteller : TOSHIBA |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -20V; -6A; 1W; uDFN6 Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -20V Drain current: -6A Power dissipation: 1W Case: uDFN6 Gate-source voltage: ±8V On-state resistance: 89.6mΩ Mounting: SMD Gate charge: 12.8nC Kind of package: reel; tape Kind of channel: enhancement |
Produkt ist nicht verfügbar |