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SSM6J503NU,LF

SSM6J503NU,LF Toshiba

SSM6J503NU_datasheet_en_20140301-1916530.pdf Hersteller: Toshiba
MOSFET SM Sig P-CH MOS ID -6A -20V -8 VGSS
auf Bestellung 7982 Stücke:
Lieferzeit 14-28 Tag (e)
Anzahl Preis ohne MwSt
47+1.12 EUR
57+ 0.92 EUR
100+ 0.63 EUR
500+ 0.47 EUR
1000+ 0.35 EUR
3000+ 0.32 EUR
6000+ 0.3 EUR
Mindestbestellmenge: 47
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Technische Details SSM6J503NU,LF Toshiba

Description: MOSFET P-CH 20V 6A 6UDFNB, Packaging: Tape & Reel (TR), Package / Case: 6-WDFN Exposed Pad, Mounting Type: Surface Mount, Operating Temperature: 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: P-Channel, Current - Continuous Drain (Id) @ 25°C: 6A (Ta), Rds On (Max) @ Id, Vgs: 32.4mOhm @ 3A, 4.5V, Power Dissipation (Max): 1W (Ta), Vgs(th) (Max) @ Id: 1V @ 1mA, Supplier Device Package: 6-UDFNB (2x2), Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V, Vgs (Max): ±8V, Drain to Source Voltage (Vdss): 20 V, Gate Charge (Qg) (Max) @ Vgs: 12.8 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 840 pF @ 10 V.

Weitere Produktangebote SSM6J503NU,LF nach Preis ab 0.37 EUR bis 1.2 EUR

Foto Bezeichnung Hersteller Beschreibung Verfügbarkeit
Preis ohne MwSt
SSM6J503NU,LF SSM6J503NU,LF Hersteller : Toshiba Semiconductor and Storage SSM6J503NU_datasheet_en_20140301.pdf?did=6824&prodName=SSM6J503NU Description: MOSFET P-CH 20V 6A 6UDFNB
Packaging: Cut Tape (CT)
Package / Case: 6-WDFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 6A (Ta)
Rds On (Max) @ Id, Vgs: 32.4mOhm @ 3A, 4.5V
Power Dissipation (Max): 1W (Ta)
Vgs(th) (Max) @ Id: 1V @ 1mA
Supplier Device Package: 6-UDFNB (2x2)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 12.8 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 840 pF @ 10 V
auf Bestellung 2710 Stücke:
Lieferzeit 21-28 Tag (e)
Anzahl Preis ohne MwSt
22+1.2 EUR
27+ 0.98 EUR
100+ 0.66 EUR
500+ 0.5 EUR
1000+ 0.37 EUR
Mindestbestellmenge: 22
SSM6J503NU,LF SSM6J503NU,LF Hersteller : Toshiba Semiconductor and Storage SSM6J503NU_datasheet_en_20140301.pdf?did=6824&prodName=SSM6J503NU Description: MOSFET P-CH 20V 6A 6UDFNB
Packaging: Tape & Reel (TR)
Package / Case: 6-WDFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 6A (Ta)
Rds On (Max) @ Id, Vgs: 32.4mOhm @ 3A, 4.5V
Power Dissipation (Max): 1W (Ta)
Vgs(th) (Max) @ Id: 1V @ 1mA
Supplier Device Package: 6-UDFNB (2x2)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 12.8 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 840 pF @ 10 V
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