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SSM6J505NU,LF

SSM6J505NU,LF Toshiba Semiconductor and Storage

SSM6J505NU_datasheet_en_20210917.pdf?did=13456&prodName=SSM6J505NU Hersteller: Toshiba Semiconductor and Storage
Description: MOSFET P-CH 12V 12A 6UDFNB
Packaging: Cut Tape (CT)
Package / Case: 6-WDFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 12A (Ta)
Rds On (Max) @ Id, Vgs: 12mOhm @ 4A, 4.5V
Power Dissipation (Max): 1.25W (Ta)
Vgs(th) (Max) @ Id: 1V @ 1mA
Supplier Device Package: 6-UDFNB (2x2)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 1.2V, 4.5V
Vgs (Max): ±6V
Drain to Source Voltage (Vdss): 12 V
Gate Charge (Qg) (Max) @ Vgs: 37.6 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 2700 pF @ 10 V
auf Bestellung 2640 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
23+0.79 EUR
100+ 0.59 EUR
500+ 0.46 EUR
1000+ 0.37 EUR
Mindestbestellmenge: 23
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Technische Details SSM6J505NU,LF Toshiba Semiconductor and Storage

Description: MOSFET P-CH 12V 12A 6UDFNB, Packaging: Tape & Reel (TR), Package / Case: 6-WDFN Exposed Pad, Mounting Type: Surface Mount, Operating Temperature: 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: P-Channel, Current - Continuous Drain (Id) @ 25°C: 12A (Ta), Rds On (Max) @ Id, Vgs: 12mOhm @ 4A, 4.5V, Power Dissipation (Max): 1.25W (Ta), Vgs(th) (Max) @ Id: 1V @ 1mA, Supplier Device Package: 6-UDFNB (2x2), Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 1.2V, 4.5V, Vgs (Max): ±6V, Drain to Source Voltage (Vdss): 12 V, Gate Charge (Qg) (Max) @ Vgs: 37.6 nC @ 4.5 V, Input Capacitance (Ciss) (Max) @ Vds: 2700 pF @ 10 V.

Weitere Produktangebote SSM6J505NU,LF nach Preis ab 0.36 EUR bis 1.16 EUR

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Preis ohne MwSt
SSM6J505NU,LF SSM6J505NU,LF Hersteller : Toshiba SSM6J505NU_datasheet_en_20210917-1916168.pdf MOSFET P-Ch U-MOS VI FET ID -12A -12V 1200pF
auf Bestellung 53952 Stücke:
Lieferzeit 14-28 Tag (e)
Anzahl Preis ohne MwSt
45+1.16 EUR
52+ 1.01 EUR
100+ 0.75 EUR
500+ 0.59 EUR
1000+ 0.46 EUR
3000+ 0.42 EUR
9000+ 0.36 EUR
Mindestbestellmenge: 45
SSM6J505NU,LF SSM6J505NU,LF Hersteller : Toshiba Semiconductor and Storage SSM6J505NU_datasheet_en_20210917.pdf?did=13456&prodName=SSM6J505NU Description: MOSFET P-CH 12V 12A 6UDFNB
Packaging: Tape & Reel (TR)
Package / Case: 6-WDFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 12A (Ta)
Rds On (Max) @ Id, Vgs: 12mOhm @ 4A, 4.5V
Power Dissipation (Max): 1.25W (Ta)
Vgs(th) (Max) @ Id: 1V @ 1mA
Supplier Device Package: 6-UDFNB (2x2)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 1.2V, 4.5V
Vgs (Max): ±6V
Drain to Source Voltage (Vdss): 12 V
Gate Charge (Qg) (Max) @ Vgs: 37.6 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 2700 pF @ 10 V
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