auf Bestellung 2722 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl | Preis ohne MwSt |
---|---|
277+ | 0.57 EUR |
387+ | 0.39 EUR |
391+ | 0.37 EUR |
500+ | 0.28 EUR |
1000+ | 0.21 EUR |
Produktrezensionen
Produktbewertung abgeben
Technische Details SSM6J507NU,LF Toshiba
Description: MOSFET P-CH 30V 10A 6UDFNB, Packaging: Tape & Reel (TR), Package / Case: 6-WDFN Exposed Pad, Mounting Type: Surface Mount, Operating Temperature: 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: P-Channel, Current - Continuous Drain (Id) @ 25°C: 10A (Ta), Rds On (Max) @ Id, Vgs: 20mOhm @ 4A, 10V, Power Dissipation (Max): 1.25W (Ta), Vgs(th) (Max) @ Id: 2.2V @ 250µA, Supplier Device Package: 6-UDFNB (2x2), Drive Voltage (Max Rds On, Min Rds On): 4V, 10V, Vgs (Max): +20V, -25V, Drain to Source Voltage (Vdss): 30 V, Gate Charge (Qg) (Max) @ Vgs: 20.4 nC @ 4.5 V, Input Capacitance (Ciss) (Max) @ Vds: 1150 pF @ 15 V.
Weitere Produktangebote SSM6J507NU,LF nach Preis ab 0.2 EUR bis 1.04 EUR
Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
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SSM6J507NU,LF | Hersteller : Toshiba | Trans MOSFET P-CH Si 30V 10A 6-Pin UDFN-B EP T/R |
auf Bestellung 2722 Stücke: Lieferzeit 14-21 Tag (e) |
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SSM6J507NU,LF | Hersteller : Toshiba Semiconductor and Storage |
Description: MOSFET P-CH 30V 10A 6UDFNB Packaging: Cut Tape (CT) Package / Case: 6-WDFN Exposed Pad Mounting Type: Surface Mount Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 10A (Ta) Rds On (Max) @ Id, Vgs: 20mOhm @ 4A, 10V Power Dissipation (Max): 1.25W (Ta) Vgs(th) (Max) @ Id: 2.2V @ 250µA Supplier Device Package: 6-UDFNB (2x2) Drive Voltage (Max Rds On, Min Rds On): 4V, 10V Vgs (Max): +20V, -25V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 20.4 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 1150 pF @ 15 V |
auf Bestellung 2758 Stücke: Lieferzeit 10-14 Tag (e) |
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SSM6J507NU,LF | Hersteller : Toshiba | MOSFET Small Signal MOSFET V=30V, I-10A |
auf Bestellung 2556 Stücke: Lieferzeit 14-28 Tag (e) |
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SSM6J507NU,LF | Hersteller : Toshiba | MOSFET P-CH 30V 10A UDFNB-6 |
auf Bestellung 1 Stücke: Lieferzeit 14-21 Tag (e) |
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SSM6J507NU,LF | Hersteller : Toshiba | Trans MOSFET P-CH Si 30V 10A 6-Pin UDFN-B EP T/R |
Produkt ist nicht verfügbar |
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SSM6J507NU,LF | Hersteller : Toshiba | Trans MOSFET P-CH Si 30V 10A 6-Pin UDFN-B EP T/R |
Produkt ist nicht verfügbar |
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SSM6J507NU,LF | Hersteller : Toshiba Semiconductor and Storage |
Description: MOSFET P-CH 30V 10A 6UDFNB Packaging: Tape & Reel (TR) Package / Case: 6-WDFN Exposed Pad Mounting Type: Surface Mount Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 10A (Ta) Rds On (Max) @ Id, Vgs: 20mOhm @ 4A, 10V Power Dissipation (Max): 1.25W (Ta) Vgs(th) (Max) @ Id: 2.2V @ 250µA Supplier Device Package: 6-UDFNB (2x2) Drive Voltage (Max Rds On, Min Rds On): 4V, 10V Vgs (Max): +20V, -25V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 20.4 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 1150 pF @ 15 V |
Produkt ist nicht verfügbar |