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SSM6J511NU,LF

SSM6J511NU,LF Toshiba Semiconductor and Storage

docget.jsp?did=30767&prodName=SSM6J511NU
Hersteller: Toshiba Semiconductor and Storage
Description: MOSFET P-CH 12V 14A 6UDFNB
Packaging: Tape & Reel (TR)
Package / Case: 6-WDFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 14A (Ta)
Rds On (Max) @ Id, Vgs: 9.1mOhm @ 4A, 8V
Vgs(th) (Max) @ Id: 1V @ 1mA
Supplier Device Package: 6-UDFNB (2x2)
Part Status: Active
Drain to Source Voltage (Vdss): 12 V
Gate Charge (Qg) (Max) @ Vgs: 47 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 3350 pF @ 6 V
auf Bestellung 30000 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
3000+0.32 EUR
9000+0.27 EUR
Mindestbestellmenge: 3000 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
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Technische Details SSM6J511NU,LF Toshiba Semiconductor and Storage

Description: MOSFET P-CH 12V 14A 6UDFNB, Packaging: Tape & Reel (TR), Package / Case: 6-WDFN Exposed Pad, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: P-Channel, Current - Continuous Drain (Id) @ 25°C: 14A (Ta), Rds On (Max) @ Id, Vgs: 9.1mOhm @ 4A, 8V, Vgs(th) (Max) @ Id: 1V @ 1mA, Supplier Device Package: 6-UDFNB (2x2), Part Status: Active, Drain to Source Voltage (Vdss): 12 V, Gate Charge (Qg) (Max) @ Vgs: 47 nC @ 4.5 V, Input Capacitance (Ciss) (Max) @ Vds: 3350 pF @ 6 V.

Weitere Produktangebote SSM6J511NU,LF nach Preis ab 0.26 EUR bis 1.38 EUR

Foto Bezeichnung Hersteller Beschreibung Verfügbarkeit Privatkunde
SSM6J511NU,LF SSM6J511NU,LF Toshiba 1482E0E2CBC6543B31FB5E8A409B03A18951B42987D30C554E770AB62FDB8DA9.pdf MOSFETs Small-signal MOSFET Power MGMT switch
auf Bestellung 20000 Stücke:
Lieferzeit 10-14 Tag (e)
3+1.29 EUR
10+0.79 EUR
100+0.51 EUR
500+0.38 EUR
1000+0.35 EUR
3000+0.29 EUR
6000+0.26 EUR
Mindestbestellmenge: 3 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
SSM6J511NU,LF SSM6J511NU,LF Toshiba Semiconductor and Storage docget.jsp?did=30767&prodName=SSM6J511NU Description: MOSFET P-CH 12V 14A 6UDFNB
Packaging: Cut Tape (CT)
Package / Case: 6-WDFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 14A (Ta)
Rds On (Max) @ Id, Vgs: 9.1mOhm @ 4A, 8V
Vgs(th) (Max) @ Id: 1V @ 1mA
Supplier Device Package: 6-UDFNB (2x2)
Part Status: Active
Drain to Source Voltage (Vdss): 12 V
Gate Charge (Qg) (Max) @ Vgs: 47 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 3350 pF @ 6 V
auf Bestellung 32778 Stücke:
Lieferzeit 10-14 Tag (e)
16+1.38 EUR
25+0.84 EUR
50+0.62 EUR
100+0.55 EUR
500+0.42 EUR
Mindestbestellmenge: 16 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
SSM6J511NU,LF 1482E0E2CBC6543B31FB5E8A409B03A18951B42987D30C554E770AB62FDB8DA9.pdf
SSM6J511NU,LF
Hersteller: Toshiba
MOSFETs Small-signal MOSFET Power MGMT switch
auf Bestellung 20000 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
3+1.29 EUR
10+0.79 EUR
100+0.51 EUR
500+0.38 EUR
1000+0.35 EUR
3000+0.29 EUR
6000+0.26 EUR
Mindestbestellmenge: 3 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
SSM6J511NU,LF docget.jsp?did=30767&prodName=SSM6J511NU
SSM6J511NU,LF
Hersteller: Toshiba Semiconductor and Storage
Description: MOSFET P-CH 12V 14A 6UDFNB
Packaging: Cut Tape (CT)
Package / Case: 6-WDFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 14A (Ta)
Rds On (Max) @ Id, Vgs: 9.1mOhm @ 4A, 8V
Vgs(th) (Max) @ Id: 1V @ 1mA
Supplier Device Package: 6-UDFNB (2x2)
Part Status: Active
Drain to Source Voltage (Vdss): 12 V
Gate Charge (Qg) (Max) @ Vgs: 47 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 3350 pF @ 6 V
auf Bestellung 32778 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
16+1.38 EUR
25+0.84 EUR
50+0.62 EUR
100+0.55 EUR
500+0.42 EUR
Mindestbestellmenge: 16 Stücke
Im Einkaufswagen  Stück im Wert von  UAH