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SSM6J512NU,LF

SSM6J512NU,LF Toshiba Semiconductor and Storage

SSM6J512NU_datasheet_en_20210917.pdf?did=30386&prodName=SSM6J512NU Hersteller: Toshiba Semiconductor and Storage
Description: MOSFET P-CH 12V 10A 6UDFNB
Packaging: Tape & Reel (TR)
Package / Case: 6-WDFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 10A (Ta)
Rds On (Max) @ Id, Vgs: 16.2mOhm @ 4A, 8V
Power Dissipation (Max): 1.25W (Ta)
Vgs(th) (Max) @ Id: 1V @ 1mA
Supplier Device Package: 6-UDFNB (2x2)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 8V
Vgs (Max): ±10V
Drain to Source Voltage (Vdss): 12 V
Gate Charge (Qg) (Max) @ Vgs: 19.5 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 1400 pF @ 6 V
auf Bestellung 24000 Stücke:
Lieferzeit 21-28 Tag (e)
Anzahl Preis ohne MwSt
3000+0.3 EUR
6000+ 0.29 EUR
9000+ 0.26 EUR
Mindestbestellmenge: 3000
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Technische Details SSM6J512NU,LF Toshiba Semiconductor and Storage

Description: MOSFET P-CH 12V 10A 6UDFNB, Packaging: Tape & Reel (TR), Package / Case: 6-WDFN Exposed Pad, Mounting Type: Surface Mount, Operating Temperature: 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: P-Channel, Current - Continuous Drain (Id) @ 25°C: 10A (Ta), Rds On (Max) @ Id, Vgs: 16.2mOhm @ 4A, 8V, Power Dissipation (Max): 1.25W (Ta), Vgs(th) (Max) @ Id: 1V @ 1mA, Supplier Device Package: 6-UDFNB (2x2), Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 1.8V, 8V, Vgs (Max): ±10V, Drain to Source Voltage (Vdss): 12 V, Gate Charge (Qg) (Max) @ Vgs: 19.5 nC @ 4.5 V, Input Capacitance (Ciss) (Max) @ Vds: 1400 pF @ 6 V.

Weitere Produktangebote SSM6J512NU,LF nach Preis ab 0.33 EUR bis 1.3 EUR

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Preis ohne MwSt
SSM6J512NU,LF SSM6J512NU,LF Hersteller : Toshiba Semiconductor and Storage SSM6J512NU_datasheet_en_20210917.pdf?did=30386&prodName=SSM6J512NU Description: MOSFET P-CH 12V 10A 6UDFNB
Packaging: Cut Tape (CT)
Package / Case: 6-WDFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 10A (Ta)
Rds On (Max) @ Id, Vgs: 16.2mOhm @ 4A, 8V
Power Dissipation (Max): 1.25W (Ta)
Vgs(th) (Max) @ Id: 1V @ 1mA
Supplier Device Package: 6-UDFNB (2x2)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 8V
Vgs (Max): ±10V
Drain to Source Voltage (Vdss): 12 V
Gate Charge (Qg) (Max) @ Vgs: 19.5 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 1400 pF @ 6 V
auf Bestellung 26896 Stücke:
Lieferzeit 21-28 Tag (e)
Anzahl Preis ohne MwSt
24+1.09 EUR
31+ 0.86 EUR
100+ 0.52 EUR
500+ 0.48 EUR
1000+ 0.33 EUR
Mindestbestellmenge: 24
SSM6J512NU,LF SSM6J512NU,LF Hersteller : Toshiba SSM6J512NU_datasheet_en_20210917-1916543.pdf MOSFET Small-signal MOSFET Vdss=-12V, Id=-10A
auf Bestellung 35729 Stücke:
Lieferzeit 14-28 Tag (e)
Anzahl Preis ohne MwSt
40+1.3 EUR
50+ 1.06 EUR
100+ 0.72 EUR
500+ 0.54 EUR
Mindestbestellmenge: 40