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SSM6J771G,LF

SSM6J771G,LF Toshiba

SSM6J771G_datasheet_en_20140312-1916175.pdf Hersteller: Toshiba
MOSFETs P-Ch SSM -5A -20V 12V VGSS 0.035Ohm
auf Bestellung 2847 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
2+1.59 EUR
10+1 EUR
100+0.67 EUR
250+0.66 EUR
500+0.52 EUR
1000+0.47 EUR
3000+0.42 EUR
Mindestbestellmenge: 2
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Technische Details SSM6J771G,LF Toshiba

Description: MOSFET P-CH 20V 5A 6WCSP, Packaging: Tape & Reel (TR), Package / Case: 6-UFBGA, WLCSP, Mounting Type: Surface Mount, Operating Temperature: 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: P-Channel, Current - Continuous Drain (Id) @ 25°C: 5A (Ta), Rds On (Max) @ Id, Vgs: 31mOhm @ 3A, 8.5V, Power Dissipation (Max): 1.2W (Ta), Vgs(th) (Max) @ Id: 1.2V @ 1mA, Drive Voltage (Max Rds On, Min Rds On): 2.5V, 8.5V, Vgs (Max): ±12V, Drain to Source Voltage (Vdss): 20 V, Gate Charge (Qg) (Max) @ Vgs: 9.8 nC @ 4.5 V, Input Capacitance (Ciss) (Max) @ Vds: 870 pF @ 10 V.

Weitere Produktangebote SSM6J771G,LF nach Preis ab 0.49 EUR bis 1.69 EUR

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SSM6J771G,LF SSM6J771G,LF Hersteller : Toshiba Semiconductor and Storage SSM6J771G_datasheet_en_20140312.pdf?did=14222&prodName=SSM6J771G Description: MOSFET P-CH 20V 5A 6WCSP
Packaging: Cut Tape (CT)
Package / Case: 6-UFBGA, WLCSP
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 5A (Ta)
Rds On (Max) @ Id, Vgs: 31mOhm @ 3A, 8.5V
Power Dissipation (Max): 1.2W (Ta)
Vgs(th) (Max) @ Id: 1.2V @ 1mA
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 8.5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 9.8 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 870 pF @ 10 V
auf Bestellung 1850 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
11+1.69 EUR
17+1.06 EUR
100+0.7 EUR
500+0.54 EUR
1000+0.49 EUR
Mindestbestellmenge: 11
Im Einkaufswagen  Stück im Wert von  UAH
SSM6J771G,LF SSM6J771G,LF Hersteller : Toshiba Semiconductor and Storage SSM6J771G_datasheet_en_20140312.pdf?did=14222&prodName=SSM6J771G Description: MOSFET P-CH 20V 5A 6WCSP
Packaging: Tape & Reel (TR)
Package / Case: 6-UFBGA, WLCSP
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 5A (Ta)
Rds On (Max) @ Id, Vgs: 31mOhm @ 3A, 8.5V
Power Dissipation (Max): 1.2W (Ta)
Vgs(th) (Max) @ Id: 1.2V @ 1mA
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 8.5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 9.8 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 870 pF @ 10 V
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Im Einkaufswagen  Stück im Wert von  UAH