SSM6J771G,LF Toshiba Semiconductor and Storage

Description: MOSFET P-CH 20V 5A 6WCSP, Input Capacitance (Ciss) (Max) @ Vds: 870 pF @ 10 V, Gate Charge (Qg) (Max) @ Vgs: 9.8 nC @ 4.5 V, Drain to Source Voltage (Vdss): 20 V, Vgs (Max): ±12V, Drive Voltage (Max Rds On, Min Rds On): 2.5V, 8.5V, Vgs(th) (Max) @ Id: 1.2V @ 1mA, Power Dissipation (Max): 1.2W (Ta), Rds On (Max) @ Id, Vgs: 31mOhm @ 3A, 8.5V, Current - Continuous Drain (Id) @ 25°C: 5A (Ta), FET Type: P-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: 150°C (TJ), Mounting Type: Surface Mount, Package / Case: 6-UFBGA, WLCSP, Packaging: Tape & Reel (TR).