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SSM6J771G,LF

SSM6J771G,LF Toshiba Semiconductor and Storage

docget.jsp?did=14222&prodName=SSM6J771G
Hersteller: Toshiba Semiconductor and Storage
Description: MOSFET P-CH 20V 5A 6WCSP
Input Capacitance (Ciss) (Max) @ Vds: 870 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs: 9.8 nC @ 4.5 V
Drain to Source Voltage (Vdss): 20 V
Vgs (Max): ±12V
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 8.5V
Vgs(th) (Max) @ Id: 1.2V @ 1mA
Power Dissipation (Max): 1.2W (Ta)
Rds On (Max) @ Id, Vgs: 31mOhm @ 3A, 8.5V
Current - Continuous Drain (Id) @ 25°C: 5A (Ta)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 6-UFBGA, WLCSP
Packaging: Cut Tape (CT)
auf Bestellung 1012 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
12+1.55 EUR
19+0.97 EUR
100+0.63 EUR
500+0.49 EUR
1000+0.44 EUR
Mindestbestellmenge: 12
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Technische Details SSM6J771G,LF Toshiba Semiconductor and Storage

Description: MOSFET P-CH 20V 5A 6WCSP, Input Capacitance (Ciss) (Max) @ Vds: 870 pF @ 10 V, Gate Charge (Qg) (Max) @ Vgs: 9.8 nC @ 4.5 V, Drain to Source Voltage (Vdss): 20 V, Vgs (Max): ±12V, Drive Voltage (Max Rds On, Min Rds On): 2.5V, 8.5V, Vgs(th) (Max) @ Id: 1.2V @ 1mA, Power Dissipation (Max): 1.2W (Ta), Rds On (Max) @ Id, Vgs: 31mOhm @ 3A, 8.5V, Current - Continuous Drain (Id) @ 25°C: 5A (Ta), FET Type: P-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: 150°C (TJ), Mounting Type: Surface Mount, Package / Case: 6-UFBGA, WLCSP, Packaging: Tape & Reel (TR).

Weitere Produktangebote SSM6J771G,LF nach Preis ab 0.42 EUR bis 1.59 EUR

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SSM6J771G,LF SSM6J771G,LF Hersteller : Toshiba SSM6J771G_datasheet_en_20140312-1916175.pdf MOSFETs P-Ch SSM -5A -20V 12V VGSS 0.035Ohm
auf Bestellung 2847 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
2+1.59 EUR
10+1 EUR
100+0.67 EUR
250+0.66 EUR
500+0.52 EUR
1000+0.47 EUR
3000+0.42 EUR
Mindestbestellmenge: 2
Im Einkaufswagen  Stück im Wert von  UAH
SSM6J771G,LF SSM6J771G,LF Hersteller : Toshiba Semiconductor and Storage docget.jsp?did=14222&prodName=SSM6J771G Description: MOSFET P-CH 20V 5A 6WCSP
Input Capacitance (Ciss) (Max) @ Vds: 870 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs: 9.8 nC @ 4.5 V
Drain to Source Voltage (Vdss): 20 V
Vgs (Max): ±12V
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 8.5V
Vgs(th) (Max) @ Id: 1.2V @ 1mA
Power Dissipation (Max): 1.2W (Ta)
Rds On (Max) @ Id, Vgs: 31mOhm @ 3A, 8.5V
Current - Continuous Drain (Id) @ 25°C: 5A (Ta)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 6-UFBGA, WLCSP
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH