
SSM6J771G,LF Toshiba Semiconductor and Storage

Description: MOSFET P-CH 20V 5A 6WCSP
Packaging: Cut Tape (CT)
Package / Case: 6-UFBGA, WLCSP
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 5A (Ta)
Rds On (Max) @ Id, Vgs: 31mOhm @ 3A, 8.5V
Power Dissipation (Max): 1.2W (Ta)
Vgs(th) (Max) @ Id: 1.2V @ 1mA
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 8.5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 9.8 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 870 pF @ 10 V
auf Bestellung 1012 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl | Preis |
---|---|
12+ | 1.55 EUR |
19+ | 0.97 EUR |
100+ | 0.63 EUR |
500+ | 0.49 EUR |
1000+ | 0.44 EUR |
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Technische Details SSM6J771G,LF Toshiba Semiconductor and Storage
Description: MOSFET P-CH 20V 5A 6WCSP, Packaging: Tape & Reel (TR), Package / Case: 6-UFBGA, WLCSP, Mounting Type: Surface Mount, Operating Temperature: 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: P-Channel, Current - Continuous Drain (Id) @ 25°C: 5A (Ta), Rds On (Max) @ Id, Vgs: 31mOhm @ 3A, 8.5V, Power Dissipation (Max): 1.2W (Ta), Vgs(th) (Max) @ Id: 1.2V @ 1mA, Drive Voltage (Max Rds On, Min Rds On): 2.5V, 8.5V, Vgs (Max): ±12V, Drain to Source Voltage (Vdss): 20 V, Gate Charge (Qg) (Max) @ Vgs: 9.8 nC @ 4.5 V, Input Capacitance (Ciss) (Max) @ Vds: 870 pF @ 10 V.
Weitere Produktangebote SSM6J771G,LF nach Preis ab 0.42 EUR bis 1.59 EUR
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SSM6J771G,LF | Hersteller : Toshiba |
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auf Bestellung 2847 Stücke: Lieferzeit 10-14 Tag (e) |
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SSM6J771G,LF | Hersteller : Toshiba Semiconductor and Storage |
![]() Packaging: Tape & Reel (TR) Package / Case: 6-UFBGA, WLCSP Mounting Type: Surface Mount Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 5A (Ta) Rds On (Max) @ Id, Vgs: 31mOhm @ 3A, 8.5V Power Dissipation (Max): 1.2W (Ta) Vgs(th) (Max) @ Id: 1.2V @ 1mA Drive Voltage (Max Rds On, Min Rds On): 2.5V, 8.5V Vgs (Max): ±12V Drain to Source Voltage (Vdss): 20 V Gate Charge (Qg) (Max) @ Vgs: 9.8 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 870 pF @ 10 V |
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