auf Bestellung 787 Stücke:
Lieferzeit 14-28 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 33+ | 1.6 EUR |
| 38+ | 1.4 EUR |
| 100+ | 1.07 EUR |
| 500+ | 0.85 EUR |
| 1000+ | 0.68 EUR |
| 3000+ | 0.59 EUR |
| 6000+ | 0.56 EUR |
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Technische Details SSM6J771G,LF Toshiba
Description: MOSFET P-CH 20V 5A 6WCSP, Packaging: Tape & Reel (TR), Package / Case: 6-UFBGA, WLCSP, Mounting Type: Surface Mount, Operating Temperature: 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: P-Channel, Current - Continuous Drain (Id) @ 25°C: 5A (Ta), Rds On (Max) @ Id, Vgs: 31mOhm @ 3A, 8.5V, Power Dissipation (Max): 1.2W (Ta), Vgs(th) (Max) @ Id: 1.2V @ 1mA, Drive Voltage (Max Rds On, Min Rds On): 2.5V, 8.5V, Vgs (Max): ±12V, Drain to Source Voltage (Vdss): 20 V, Gate Charge (Qg) (Max) @ Vgs: 9.8 nC @ 4.5 V, Input Capacitance (Ciss) (Max) @ Vds: 870 pF @ 10 V.
Weitere Produktangebote SSM6J771G,LF
| Foto | Bezeichnung | Hersteller | Beschreibung |
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SSM6J771G,LF | Hersteller : Toshiba Semiconductor and Storage |
 Description: MOSFET P-CH 20V 5A 6WCSPPackaging: Tape & Reel (TR) Package / Case: 6-UFBGA, WLCSP Mounting Type: Surface Mount Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 5A (Ta) Rds On (Max) @ Id, Vgs: 31mOhm @ 3A, 8.5V Power Dissipation (Max): 1.2W (Ta) Vgs(th) (Max) @ Id: 1.2V @ 1mA Drive Voltage (Max Rds On, Min Rds On): 2.5V, 8.5V Vgs (Max): ±12V Drain to Source Voltage (Vdss): 20 V Gate Charge (Qg) (Max) @ Vgs: 9.8 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 870 pF @ 10 V |
Produkt ist nicht verfügbar |
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SSM6J771G,LF | Hersteller : Toshiba Semiconductor and Storage |
Description: MOSFET P-CH 20V 5A 6WCSP Packaging: Cut Tape (CT) Package / Case: 6-UFBGA, WLCSP Mounting Type: Surface Mount Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 5A (Ta) Rds On (Max) @ Id, Vgs: 31mOhm @ 3A, 8.5V Power Dissipation (Max): 1.2W (Ta) Vgs(th) (Max) @ Id: 1.2V @ 1mA Drive Voltage (Max Rds On, Min Rds On): 2.5V, 8.5V Vgs (Max): ±12V Drain to Source Voltage (Vdss): 20 V Gate Charge (Qg) (Max) @ Vgs: 9.8 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 870 pF @ 10 V |
Produkt ist nicht verfügbar |