SSM6J808R,LXHF Toshiba
Hersteller: Toshiba
MOSFET AUTO AEC-Q SS MOS P-ch Logic-Level Gate Drive VDSS:-40V IC:-7A PD:1.5W TSOP6F
MOSFET AUTO AEC-Q SS MOS P-ch Logic-Level Gate Drive VDSS:-40V IC:-7A PD:1.5W TSOP6F
auf Bestellung 14993 Stücke:
Lieferzeit 239-243 Tag (e)
Anzahl | Preis ohne MwSt |
---|---|
3+ | 1.23 EUR |
10+ | 1.09 EUR |
100+ | 0.74 EUR |
500+ | 0.62 EUR |
1000+ | 0.53 EUR |
3000+ | 0.48 EUR |
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Technische Details SSM6J808R,LXHF Toshiba
Description: AUTO AEC-Q SS MOS P-CH LOGIC-LEV, Packaging: Tape & Reel (TR), Package / Case: 6-SMD, Flat Leads, Mounting Type: Surface Mount, Operating Temperature: 150°C, Technology: MOSFET (Metal Oxide), FET Type: P-Channel, Current - Continuous Drain (Id) @ 25°C: 7A (Ta), Rds On (Max) @ Id, Vgs: 35mOhm @ 2.5A, 10V, Power Dissipation (Max): 1.5W (Ta), Vgs(th) (Max) @ Id: 2V @ 100µA, Supplier Device Package: 6-TSOP-F, Grade: Automotive, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 4V, 10V, Vgs (Max): +10V, -20V, Drain to Source Voltage (Vdss): 40 V, Gate Charge (Qg) (Max) @ Vgs: 24.2 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 1020 pF @ 10 V, Qualification: AEC-Q101.
Weitere Produktangebote SSM6J808R,LXHF nach Preis ab 0.53 EUR bis 1.23 EUR
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SSM6J808R,LXHF | Hersteller : Toshiba Semiconductor and Storage |
Description: AUTO AEC-Q SS MOS P-CH LOGIC-LEV Packaging: Cut Tape (CT) Package / Case: 6-SMD, Flat Leads Mounting Type: Surface Mount Operating Temperature: 150°C Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 7A (Ta) Rds On (Max) @ Id, Vgs: 35mOhm @ 2.5A, 10V Power Dissipation (Max): 1.5W (Ta) Vgs(th) (Max) @ Id: 2V @ 100µA Supplier Device Package: 6-TSOP-F Grade: Automotive Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4V, 10V Vgs (Max): +10V, -20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 24.2 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1020 pF @ 10 V Qualification: AEC-Q101 |
auf Bestellung 2614 Stücke: Lieferzeit 10-14 Tag (e) |
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SSM6J808R,LXHF | Hersteller : Toshiba Semiconductor and Storage |
Description: AUTO AEC-Q SS MOS P-CH LOGIC-LEV Packaging: Tape & Reel (TR) Package / Case: 6-SMD, Flat Leads Mounting Type: Surface Mount Operating Temperature: 150°C Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 7A (Ta) Rds On (Max) @ Id, Vgs: 35mOhm @ 2.5A, 10V Power Dissipation (Max): 1.5W (Ta) Vgs(th) (Max) @ Id: 2V @ 100µA Supplier Device Package: 6-TSOP-F Grade: Automotive Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4V, 10V Vgs (Max): +10V, -20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 24.2 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1020 pF @ 10 V Qualification: AEC-Q101 |
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