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SSM6J808R,LXHF

SSM6J808R,LXHF Toshiba Semiconductor and Storage

SSM6J808R_datasheet_en_20210528.pdf?did=67689&prodName=SSM6J808R Hersteller: Toshiba Semiconductor and Storage
Description: AUTO AEC-Q SS MOS P-CH LOGIC-LEV
Packaging: Tape & Reel (TR)
Package / Case: 6-SMD, Flat Leads
Mounting Type: Surface Mount
Operating Temperature: 150°C
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 7A (Ta)
Rds On (Max) @ Id, Vgs: 35mOhm @ 2.5A, 10V
Power Dissipation (Max): 1.5W (Ta)
Vgs(th) (Max) @ Id: 2V @ 100µA
Supplier Device Package: 6-TSOP-F
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
Vgs (Max): +10V, -20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 24.2 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1020 pF @ 10 V
Qualification: AEC-Q101
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3000+0.46 EUR
Mindestbestellmenge: 3000
Im Einkaufswagen  Stück im Wert von  UAH
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Technische Details SSM6J808R,LXHF Toshiba Semiconductor and Storage

Description: AUTO AEC-Q SS MOS P-CH LOGIC-LEV, Packaging: Tape & Reel (TR), Package / Case: 6-SMD, Flat Leads, Mounting Type: Surface Mount, Operating Temperature: 150°C, Technology: MOSFET (Metal Oxide), FET Type: P-Channel, Current - Continuous Drain (Id) @ 25°C: 7A (Ta), Rds On (Max) @ Id, Vgs: 35mOhm @ 2.5A, 10V, Power Dissipation (Max): 1.5W (Ta), Vgs(th) (Max) @ Id: 2V @ 100µA, Supplier Device Package: 6-TSOP-F, Grade: Automotive, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 4V, 10V, Vgs (Max): +10V, -20V, Drain to Source Voltage (Vdss): 40 V, Gate Charge (Qg) (Max) @ Vgs: 24.2 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 1020 pF @ 10 V, Qualification: AEC-Q101.

Weitere Produktangebote SSM6J808R,LXHF nach Preis ab 0.42 EUR bis 1.8 EUR

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SSM6J808R,LXHF SSM6J808R,LXHF Hersteller : Toshiba SSM6J808R_datasheet_en_20240415-2584120.pdf MOSFETs AUTO AEC-Q SS MOS P-ch Logic-Level Gate Drive VDSS:-40V IC:-7A PD:1.5W TSOP6F
auf Bestellung 11646 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
2+1.41 EUR
10+1.06 EUR
100+0.72 EUR
500+0.58 EUR
1000+0.51 EUR
3000+0.45 EUR
6000+0.42 EUR
Mindestbestellmenge: 2
Im Einkaufswagen  Stück im Wert von  UAH
SSM6J808R,LXHF SSM6J808R,LXHF Hersteller : Toshiba Semiconductor and Storage SSM6J808R_datasheet_en_20210528.pdf?did=67689&prodName=SSM6J808R Description: AUTO AEC-Q SS MOS P-CH LOGIC-LEV
Packaging: Cut Tape (CT)
Package / Case: 6-SMD, Flat Leads
Mounting Type: Surface Mount
Operating Temperature: 150°C
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 7A (Ta)
Rds On (Max) @ Id, Vgs: 35mOhm @ 2.5A, 10V
Power Dissipation (Max): 1.5W (Ta)
Vgs(th) (Max) @ Id: 2V @ 100µA
Supplier Device Package: 6-TSOP-F
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
Vgs (Max): +10V, -20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 24.2 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1020 pF @ 10 V
Qualification: AEC-Q101
auf Bestellung 6932 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
10+1.8 EUR
16+1.13 EUR
100+0.75 EUR
500+0.58 EUR
1000+0.52 EUR
Mindestbestellmenge: 10
Im Einkaufswagen  Stück im Wert von  UAH