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SSM6K202FE,LF

SSM6K202FE,LF Toshiba Semiconductor and Storage

SSM6K202FE_datasheet_en_20220203.pdf?did=7258&prodName=SSM6K202FE Hersteller: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 30V 2.3A ES6
Packaging: Tape & Reel (TR)
Package / Case: SOT-563, SOT-666
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 2.3A (Ta)
Rds On (Max) @ Id, Vgs: 85mOhm @ 1.5A, 4V
Power Dissipation (Max): 500mW (Ta)
Vgs(th) (Max) @ Id: 1V @ 1mA
Supplier Device Package: ES6
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 30 V
Input Capacitance (Ciss) (Max) @ Vds: 270 pF @ 10 V
auf Bestellung 12000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
4000+0.29 EUR
8000+0.27 EUR
12000+0.25 EUR
Mindestbestellmenge: 4000
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Technische Details SSM6K202FE,LF Toshiba Semiconductor and Storage

Description: MOSFET N-CH 30V 2.3A ES6, Packaging: Tape & Reel (TR), Package / Case: SOT-563, SOT-666, Mounting Type: Surface Mount, Operating Temperature: 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 2.3A (Ta), Rds On (Max) @ Id, Vgs: 85mOhm @ 1.5A, 4V, Power Dissipation (Max): 500mW (Ta), Vgs(th) (Max) @ Id: 1V @ 1mA, Supplier Device Package: ES6, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4V, Vgs (Max): ±12V, Drain to Source Voltage (Vdss): 30 V, Input Capacitance (Ciss) (Max) @ Vds: 270 pF @ 10 V.

Weitere Produktangebote SSM6K202FE,LF nach Preis ab 0.22 EUR bis 0.81 EUR

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SSM6K202FE,LF SSM6K202FE,LF Hersteller : Toshiba SSM6K202FE_datasheet_en_20220203-1075539.pdf MOSFETs Small-signal FET 2.3A 30V 0.145Ohm
auf Bestellung 4202 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
5+0.69 EUR
10+0.60 EUR
100+0.42 EUR
500+0.32 EUR
1000+0.26 EUR
4000+0.24 EUR
8000+0.22 EUR
Mindestbestellmenge: 5
Im Einkaufswagen  Stück im Wert von  UAH
SSM6K202FE,LF SSM6K202FE,LF Hersteller : Toshiba Semiconductor and Storage SSM6K202FE_datasheet_en_20220203.pdf?did=7258&prodName=SSM6K202FE Description: MOSFET N-CH 30V 2.3A ES6
Packaging: Cut Tape (CT)
Package / Case: SOT-563, SOT-666
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 2.3A (Ta)
Rds On (Max) @ Id, Vgs: 85mOhm @ 1.5A, 4V
Power Dissipation (Max): 500mW (Ta)
Vgs(th) (Max) @ Id: 1V @ 1mA
Supplier Device Package: ES6
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 30 V
Input Capacitance (Ciss) (Max) @ Vds: 270 pF @ 10 V
auf Bestellung 15376 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
22+0.81 EUR
26+0.69 EUR
100+0.52 EUR
500+0.41 EUR
1000+0.31 EUR
2000+0.29 EUR
Mindestbestellmenge: 22
Im Einkaufswagen  Stück im Wert von  UAH