SSM6K202FE,LF Toshiba Semiconductor and Storage
Hersteller: Toshiba Semiconductor and StorageDescription: MOSFET N-CH 30V 2.3A ES6
Packaging: Tape & Reel (TR)
Package / Case: SOT-563, SOT-666
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 2.3A (Ta)
Rds On (Max) @ Id, Vgs: 85mOhm @ 1.5A, 4V
Power Dissipation (Max): 500mW (Ta)
Vgs(th) (Max) @ Id: 1V @ 1mA
Supplier Device Package: ES6
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 30 V
Input Capacitance (Ciss) (Max) @ Vds: 270 pF @ 10 V
auf Bestellung 12000 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 4000+ | 0.29 EUR |
| 8000+ | 0.27 EUR |
| 12000+ | 0.25 EUR |
Produktrezensionen
Produktbewertung abgeben
Technische Details SSM6K202FE,LF Toshiba Semiconductor and Storage
Description: MOSFET N-CH 30V 2.3A ES6, Packaging: Tape & Reel (TR), Package / Case: SOT-563, SOT-666, Mounting Type: Surface Mount, Operating Temperature: 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 2.3A (Ta), Rds On (Max) @ Id, Vgs: 85mOhm @ 1.5A, 4V, Power Dissipation (Max): 500mW (Ta), Vgs(th) (Max) @ Id: 1V @ 1mA, Supplier Device Package: ES6, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4V, Vgs (Max): ±12V, Drain to Source Voltage (Vdss): 30 V, Input Capacitance (Ciss) (Max) @ Vds: 270 pF @ 10 V.
Weitere Produktangebote SSM6K202FE,LF nach Preis ab 0.29 EUR bis 0.81 EUR
| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis ohne MwSt | ||||||||||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
 |
SSM6K202FE,LF | Hersteller : Toshiba |
MOSFET Small-signal FET 2.3A 30V 0.145Ohm |
auf Bestellung 10417 Stücke: Lieferzeit 14-28 Tag (e) |
|
||||||||||||||||
|
|
SSM6K202FE,LF | Hersteller : Toshiba Semiconductor and Storage |
Description: MOSFET N-CH 30V 2.3A ES6 Packaging: Cut Tape (CT) Package / Case: SOT-563, SOT-666 Mounting Type: Surface Mount Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 2.3A (Ta) Rds On (Max) @ Id, Vgs: 85mOhm @ 1.5A, 4V Power Dissipation (Max): 500mW (Ta) Vgs(th) (Max) @ Id: 1V @ 1mA Supplier Device Package: ES6 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4V Vgs (Max): ±12V Drain to Source Voltage (Vdss): 30 V Input Capacitance (Ciss) (Max) @ Vds: 270 pF @ 10 V |
auf Bestellung 15376 Stücke: Lieferzeit 10-14 Tag (e) |
|