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SSM6K211FE,LF

SSM6K211FE,LF Toshiba Semiconductor and Storage

SSM6K211FE_datasheet_en_20140301.pdf?did=12358&prodName=SSM6K211FE Hersteller: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 20V 3.2A ES6
Packaging: Tape & Reel (TR)
Package / Case: SOT-563, SOT-666
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 3.2A (Ta)
Rds On (Max) @ Id, Vgs: 47mOhm @ 2A, 4.5V
Power Dissipation (Max): 500mW (Ta)
Vgs(th) (Max) @ Id: 1V @ 1mA
Supplier Device Package: ES6
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
Vgs (Max): ±10V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 10.8 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 510 pF @ 10 V
auf Bestellung 8000 Stücke:
Lieferzeit 21-28 Tag (e)
Anzahl Preis ohne MwSt
4000+0.33 EUR
8000+ 0.32 EUR
Mindestbestellmenge: 4000
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Technische Details SSM6K211FE,LF Toshiba Semiconductor and Storage

Description: MOSFET N-CH 20V 3.2A ES6, Packaging: Tape & Reel (TR), Package / Case: SOT-563, SOT-666, Mounting Type: Surface Mount, Operating Temperature: 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 3.2A (Ta), Rds On (Max) @ Id, Vgs: 47mOhm @ 2A, 4.5V, Power Dissipation (Max): 500mW (Ta), Vgs(th) (Max) @ Id: 1V @ 1mA, Supplier Device Package: ES6, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V, Vgs (Max): ±10V, Drain to Source Voltage (Vdss): 20 V, Gate Charge (Qg) (Max) @ Vgs: 10.8 nC @ 4.5 V, Input Capacitance (Ciss) (Max) @ Vds: 510 pF @ 10 V.

Weitere Produktangebote SSM6K211FE,LF nach Preis ab 0.33 EUR bis 1.32 EUR

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SSM6K211FE,LF SSM6K211FE,LF Hersteller : Toshiba Semiconductor and Storage SSM6K211FE_datasheet_en_20140301.pdf?did=12358&prodName=SSM6K211FE Description: MOSFET N-CH 20V 3.2A ES6
Packaging: Cut Tape (CT)
Package / Case: SOT-563, SOT-666
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 3.2A (Ta)
Rds On (Max) @ Id, Vgs: 47mOhm @ 2A, 4.5V
Power Dissipation (Max): 500mW (Ta)
Vgs(th) (Max) @ Id: 1V @ 1mA
Supplier Device Package: ES6
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
Vgs (Max): ±10V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 10.8 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 510 pF @ 10 V
auf Bestellung 11977 Stücke:
Lieferzeit 21-28 Tag (e)
Anzahl Preis ohne MwSt
22+1.22 EUR
28+ 0.96 EUR
100+ 0.58 EUR
500+ 0.53 EUR
1000+ 0.36 EUR
2000+ 0.33 EUR
Mindestbestellmenge: 22
SSM6K211FE,LF SSM6K211FE,LF Hersteller : Toshiba SSM6K211FE_datasheet_en_20140301-1150435.pdf MOSFET Small-Signal MOSFET
auf Bestellung 11923 Stücke:
Lieferzeit 122-136 Tag (e)
Anzahl Preis ohne MwSt
40+1.32 EUR
49+ 1.08 EUR
100+ 0.73 EUR
500+ 0.55 EUR
1000+ 0.41 EUR
2000+ 0.38 EUR
4000+ 0.35 EUR
Mindestbestellmenge: 40