SSM6K211FE,LF

SSM6K211FE,LF Toshiba Semiconductor and Storage


SSM6K211FE_datasheet_en_20140301.pdf?did=12358&prodName=SSM6K211FE Hersteller: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 20V 3.2A ES6
Packaging: Tape & Reel (TR)
Package / Case: SOT-563, SOT-666
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 3.2A (Ta)
Rds On (Max) @ Id, Vgs: 47mOhm @ 2A, 4.5V
Power Dissipation (Max): 500mW (Ta)
Vgs(th) (Max) @ Id: 1V @ 1mA
Supplier Device Package: ES6
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
Vgs (Max): ±10V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 10.8 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 510 pF @ 10 V
auf Bestellung 4000 Stücke:

Lieferzeit 10-14 Tag (e)
Anzahl Preis
4000+0.23 EUR
Mindestbestellmenge: 4000
Im Einkaufswagen  Stück im Wert von  UAH
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Technische Details SSM6K211FE,LF Toshiba Semiconductor and Storage

Description: MOSFET N-CH 20V 3.2A ES6, Packaging: Tape & Reel (TR), Package / Case: SOT-563, SOT-666, Mounting Type: Surface Mount, Operating Temperature: 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 3.2A (Ta), Rds On (Max) @ Id, Vgs: 47mOhm @ 2A, 4.5V, Power Dissipation (Max): 500mW (Ta), Vgs(th) (Max) @ Id: 1V @ 1mA, Supplier Device Package: ES6, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V, Vgs (Max): ±10V, Drain to Source Voltage (Vdss): 20 V, Gate Charge (Qg) (Max) @ Vgs: 10.8 nC @ 4.5 V, Input Capacitance (Ciss) (Max) @ Vds: 510 pF @ 10 V.

Weitere Produktangebote SSM6K211FE,LF nach Preis ab 0.19 EUR bis 0.92 EUR

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SSM6K211FE,LF SSM6K211FE,LF Hersteller : Toshiba SSM6K211FE_datasheet_en_20140301-1150435.pdf MOSFETs Small-Signal MOSFET
auf Bestellung 4000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
4+0.83 EUR
10+0.64 EUR
100+0.36 EUR
1000+0.22 EUR
8000+0.19 EUR
Mindestbestellmenge: 4
Im Einkaufswagen  Stück im Wert von  UAH
SSM6K211FE,LF SSM6K211FE,LF Hersteller : Toshiba Semiconductor and Storage SSM6K211FE_datasheet_en_20140301.pdf?did=12358&prodName=SSM6K211FE Description: MOSFET N-CH 20V 3.2A ES6
Packaging: Cut Tape (CT)
Package / Case: SOT-563, SOT-666
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 3.2A (Ta)
Rds On (Max) @ Id, Vgs: 47mOhm @ 2A, 4.5V
Power Dissipation (Max): 500mW (Ta)
Vgs(th) (Max) @ Id: 1V @ 1mA
Supplier Device Package: ES6
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
Vgs (Max): ±10V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 10.8 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 510 pF @ 10 V
auf Bestellung 7990 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
20+0.92 EUR
31+0.59 EUR
100+0.39 EUR
500+0.32 EUR
1000+0.26 EUR
Mindestbestellmenge: 20
Im Einkaufswagen  Stück im Wert von  UAH