SSM6K217FE,LF Toshiba Semiconductor and Storage
Hersteller: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 40V 1.8A ES6
Input Capacitance (Ciss) (Max) @ Vds: 130 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs: 1.1 nC @ 4.2 V
Drain to Source Voltage (Vdss): 40 V
Vgs (Max): ±12V
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 8V
Part Status: Active
Supplier Device Package: ES6
Vgs(th) (Max) @ Id: 1.2V @ 1mA
Power Dissipation (Max): 500mW (Ta)
Rds On (Max) @ Id, Vgs: 195mOhm @ 1A, 8V
Current - Continuous Drain (Id) @ 25°C: 1.8A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SOT-563, SOT-666
Packaging: Tape & Reel (TR)
| Anzahl | Preis |
|---|---|
| 4000+ | 0.13 EUR |
| 8000+ | 0.12 EUR |
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Technische Details SSM6K217FE,LF Toshiba Semiconductor and Storage
Description: MOSFET N-CH 40V 1.8A ES6, Input Capacitance (Ciss) (Max) @ Vds: 130 pF @ 10 V, Gate Charge (Qg) (Max) @ Vgs: 1.1 nC @ 4.2 V, Drain to Source Voltage (Vdss): 40 V, Vgs (Max): ±12V, Drive Voltage (Max Rds On, Min Rds On): 1.8V, 8V, Part Status: Active, Supplier Device Package: ES6, Vgs(th) (Max) @ Id: 1.2V @ 1mA, Power Dissipation (Max): 500mW (Ta), Rds On (Max) @ Id, Vgs: 195mOhm @ 1A, 8V, Current - Continuous Drain (Id) @ 25°C: 1.8A (Ta), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: 150°C (TJ), Mounting Type: Surface Mount, Package / Case: SOT-563, SOT-666, Packaging: Tape & Reel (TR).
Weitere Produktangebote SSM6K217FE,LF nach Preis ab 0.13 EUR bis 0.57 EUR
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SSM6K217FE,LF | Hersteller : Toshiba Semiconductor and Storage |
Description: MOSFET N-CH 40V 1.8A ES6 Packaging: Cut Tape (CT) Package / Case: SOT-563, SOT-666 Mounting Type: Surface Mount Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 1.8A (Ta) Rds On (Max) @ Id, Vgs: 195mOhm @ 1A, 8V Power Dissipation (Max): 500mW (Ta) Vgs(th) (Max) @ Id: 1.2V @ 1mA Supplier Device Package: ES6 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 1.8V, 8V Vgs (Max): ±12V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 1.1 nC @ 4.2 V Input Capacitance (Ciss) (Max) @ Vds: 130 pF @ 10 V |
auf Bestellung 21923 Stücke: Lieferzeit 10-14 Tag (e) |
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SSM6K217FE,LF | Hersteller : Toshiba |
MOSFETs Small Signal MOSFET |
auf Bestellung 7108 Stücke: Lieferzeit 10-14 Tag (e) |
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