SSM6K217FE,LF

SSM6K217FE,LF Toshiba Semiconductor and Storage


docget.jsp?did=15010&prodName=SSM6K217FE Hersteller: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 40V 1.8A ES6
Packaging: Tape & Reel (TR)
Package / Case: SOT-563, SOT-666
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 1.8A (Ta)
Rds On (Max) @ Id, Vgs: 195mOhm @ 1A, 8V
Power Dissipation (Max): 500mW (Ta)
Vgs(th) (Max) @ Id: 1.2V @ 1mA
Supplier Device Package: ES6
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 8V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 1.1 nC @ 4.2 V
Input Capacitance (Ciss) (Max) @ Vds: 130 pF @ 10 V
auf Bestellung 20000 Stücke:

Lieferzeit 10-14 Tag (e)
Anzahl Preis
4000+0.13 EUR
8000+0.12 EUR
Mindestbestellmenge: 4000
Im Einkaufswagen  Stück im Wert von  UAH
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Technische Details SSM6K217FE,LF Toshiba Semiconductor and Storage

Description: MOSFET N-CH 40V 1.8A ES6, Packaging: Tape & Reel (TR), Package / Case: SOT-563, SOT-666, Mounting Type: Surface Mount, Operating Temperature: 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 1.8A (Ta), Rds On (Max) @ Id, Vgs: 195mOhm @ 1A, 8V, Power Dissipation (Max): 500mW (Ta), Vgs(th) (Max) @ Id: 1.2V @ 1mA, Supplier Device Package: ES6, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 1.8V, 8V, Vgs (Max): ±12V, Drain to Source Voltage (Vdss): 40 V, Gate Charge (Qg) (Max) @ Vgs: 1.1 nC @ 4.2 V, Input Capacitance (Ciss) (Max) @ Vds: 130 pF @ 10 V.

Weitere Produktangebote SSM6K217FE,LF nach Preis ab 0.13 EUR bis 0.57 EUR

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SSM6K217FE,LF SSM6K217FE,LF Hersteller : Toshiba Semiconductor and Storage docget.jsp?did=15010&prodName=SSM6K217FE Description: MOSFET N-CH 40V 1.8A ES6
Packaging: Cut Tape (CT)
Package / Case: SOT-563, SOT-666
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 1.8A (Ta)
Rds On (Max) @ Id, Vgs: 195mOhm @ 1A, 8V
Power Dissipation (Max): 500mW (Ta)
Vgs(th) (Max) @ Id: 1.2V @ 1mA
Supplier Device Package: ES6
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 8V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 1.1 nC @ 4.2 V
Input Capacitance (Ciss) (Max) @ Vds: 130 pF @ 10 V
auf Bestellung 22363 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
40+0.44 EUR
61+0.29 EUR
100+0.23 EUR
500+0.22 EUR
1000+0.19 EUR
2000+0.18 EUR
Mindestbestellmenge: 40
Im Einkaufswagen  Stück im Wert von  UAH
SSM6K217FE,LF SSM6K217FE,LF Hersteller : Toshiba SSM6K217FE_datasheet_en_20140312-1916328.pdf MOSFETs Small Signal MOSFET
auf Bestellung 7108 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
5+0.57 EUR
10+0.33 EUR
100+0.24 EUR
500+0.19 EUR
1000+0.16 EUR
4000+0.15 EUR
8000+0.13 EUR
Mindestbestellmenge: 5
Im Einkaufswagen  Stück im Wert von  UAH