SSM6K217FE,LF Toshiba Semiconductor and Storage

Description: MOSFET N-CH 40V 1.8A ES6, Input Capacitance (Ciss) (Max) @ Vds: 130 pF @ 10 V, Gate Charge (Qg) (Max) @ Vgs: 1.1 nC @ 4.2 V, Drain to Source Voltage (Vdss): 40 V, Vgs (Max): ±12V, Drive Voltage (Max Rds On, Min Rds On): 1.8V, 8V, Part Status: Active, Supplier Device Package: ES6, Vgs(th) (Max) @ Id: 1.2V @ 1mA, Power Dissipation (Max): 500mW (Ta), Rds On (Max) @ Id, Vgs: 195mOhm @ 1A, 8V, Current - Continuous Drain (Id) @ 25°C: 1.8A (Ta), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: 150°C (TJ), Mounting Type: Surface Mount, Package / Case: SOT-563, SOT-666, Packaging: Tape & Reel (TR).