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SSM6K341NU,LF

SSM6K341NU,LF Toshiba Semiconductor and Storage

docget.jsp?did=56020&prodName=SSM6K341NU
Hersteller: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 60V 6A 6UDFNB
Input Capacitance (Ciss) (Max) @ Vds: 550 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs: 9.3 nC @ 10 V
Drain to Source Voltage (Vdss): 60 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
Part Status: Active
Supplier Device Package: 6-UDFNB (2x2)
Vgs(th) (Max) @ Id: 2.5V @ 100µA
Power Dissipation (Max): 2.5W (Ta)
Rds On (Max) @ Id, Vgs: 36mOhm @ 4A, 10V
Current - Continuous Drain (Id) @ 25°C: 6A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C
Mounting Type: Surface Mount
Package / Case: 6-WDFN Exposed Pad
Packaging: Tape & Reel (TR)
auf Bestellung 12000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3000+0.24 EUR
6000+0.22 EUR
9000+0.21 EUR
Mindestbestellmenge: 3000
Im Einkaufswagen  Stück im Wert von  UAH
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Technische Details SSM6K341NU,LF Toshiba Semiconductor and Storage

Description: MOSFET N-CH 60V 6A 6UDFNB, Input Capacitance (Ciss) (Max) @ Vds: 550 pF @ 10 V, Gate Charge (Qg) (Max) @ Vgs: 9.3 nC @ 10 V, Drain to Source Voltage (Vdss): 60 V, Vgs (Max): ±20V, Drive Voltage (Max Rds On, Min Rds On): 4V, 10V, Part Status: Active, Supplier Device Package: 6-UDFNB (2x2), Vgs(th) (Max) @ Id: 2.5V @ 100µA, Power Dissipation (Max): 2.5W (Ta), Rds On (Max) @ Id, Vgs: 36mOhm @ 4A, 10V, Current - Continuous Drain (Id) @ 25°C: 6A (Ta), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: 150°C, Mounting Type: Surface Mount, Package / Case: 6-WDFN Exposed Pad, Packaging: Tape & Reel (TR).

Weitere Produktangebote SSM6K341NU,LF nach Preis ab 0.24 EUR bis 1.32 EUR

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SSM6K341NU,LF SSM6K341NU,LF Hersteller : Toshiba Semiconductor and Storage docget.jsp?did=56020&prodName=SSM6K341NU Description: MOSFET N-CH 60V 6A 6UDFNB
Package / Case: 6-WDFN Exposed Pad
Packaging: Cut Tape (CT)
Input Capacitance (Ciss) (Max) @ Vds: 550 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs: 9.3 nC @ 10 V
Drain to Source Voltage (Vdss): 60 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
Part Status: Active
Supplier Device Package: 6-UDFNB (2x2)
Vgs(th) (Max) @ Id: 2.5V @ 100µA
Power Dissipation (Max): 2.5W (Ta)
Rds On (Max) @ Id, Vgs: 36mOhm @ 4A, 10V
Current - Continuous Drain (Id) @ 25°C: 6A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C
Mounting Type: Surface Mount
auf Bestellung 13704 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
17+1.07 EUR
27+0.67 EUR
100+0.43 EUR
500+0.33 EUR
1000+0.29 EUR
Mindestbestellmenge: 17
Im Einkaufswagen  Stück im Wert von  UAH
SSM6K341NU,LF SSM6K341NU,LF Hersteller : Toshiba 84F399631627BB4E7FFF5CEAFAFA5725F4DE41BC1E4A1D267A4C6455BCAE3E4D.pdf MOSFETs LowON Res MOSFET ID=6A VDSS=100V
auf Bestellung 570586 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3+1.15 EUR
10+0.71 EUR
100+0.46 EUR
500+0.35 EUR
1000+0.32 EUR
3000+0.27 EUR
6000+0.24 EUR
Mindestbestellmenge: 3
Im Einkaufswagen  Stück im Wert von  UAH
SSM6K341NU,LF Hersteller : Toshiba SSM6K341NU_datasheet_en_20200107-1289309.pdf MOSFET N-CH 60V 6A UDFN6B Група товару: Транзистори Од. вим: шт
auf Bestellung 10 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
4+1.32 EUR
Mindestbestellmenge: 4
Im Einkaufswagen  Stück im Wert von  UAH