SSM6K341NU,LF Toshiba Semiconductor and Storage
Hersteller: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 60V 6A 6UDFNB
Packaging: Tape & Reel (TR)
Package / Case: 6-WDFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: 150°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 6A (Ta)
Rds On (Max) @ Id, Vgs: 36mOhm @ 4A, 10V
Power Dissipation (Max): 2.5W (Ta)
Vgs(th) (Max) @ Id: 2.5V @ 100µA
Supplier Device Package: 6-UDFNB (2x2)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 9.3 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 550 pF @ 10 V
Description: MOSFET N-CH 60V 6A 6UDFNB
Packaging: Tape & Reel (TR)
Package / Case: 6-WDFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: 150°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 6A (Ta)
Rds On (Max) @ Id, Vgs: 36mOhm @ 4A, 10V
Power Dissipation (Max): 2.5W (Ta)
Vgs(th) (Max) @ Id: 2.5V @ 100µA
Supplier Device Package: 6-UDFNB (2x2)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 9.3 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 550 pF @ 10 V
auf Bestellung 12000 Stücke:
Lieferzeit 21-28 Tag (e)
Anzahl | Preis ohne MwSt |
---|---|
3000+ | 0.36 EUR |
6000+ | 0.34 EUR |
9000+ | 0.32 EUR |
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Technische Details SSM6K341NU,LF Toshiba Semiconductor and Storage
Description: MOSFET N-CH 60V 6A 6UDFNB, Packaging: Tape & Reel (TR), Package / Case: 6-WDFN Exposed Pad, Mounting Type: Surface Mount, Operating Temperature: 150°C, Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 6A (Ta), Rds On (Max) @ Id, Vgs: 36mOhm @ 4A, 10V, Power Dissipation (Max): 2.5W (Ta), Vgs(th) (Max) @ Id: 2.5V @ 100µA, Supplier Device Package: 6-UDFNB (2x2), Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 4V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 60 V, Gate Charge (Qg) (Max) @ Vgs: 9.3 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 550 pF @ 10 V.
Weitere Produktangebote SSM6K341NU,LF nach Preis ab 0.32 EUR bis 1.07 EUR
Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis ohne MwSt | ||||||||||||||||
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SSM6K341NU,LF | Hersteller : Toshiba | MOSFET LowON Res MOSFET ID=6A VDSS=100V |
auf Bestellung 658137 Stücke: Lieferzeit 14-28 Tag (e) |
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SSM6K341NU,LF | Hersteller : Toshiba Semiconductor and Storage |
Description: MOSFET N-CH 60V 6A 6UDFNB Packaging: Cut Tape (CT) Package / Case: 6-WDFN Exposed Pad Mounting Type: Surface Mount Operating Temperature: 150°C Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 6A (Ta) Rds On (Max) @ Id, Vgs: 36mOhm @ 4A, 10V Power Dissipation (Max): 2.5W (Ta) Vgs(th) (Max) @ Id: 2.5V @ 100µA Supplier Device Package: 6-UDFNB (2x2) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 9.3 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 550 pF @ 10 V |
auf Bestellung 18988 Stücke: Lieferzeit 21-28 Tag (e) |
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SSM6K341NU,LF | Hersteller : Toshiba | MOSFET N-CH 60V 6A UDFN6B |
auf Bestellung 10 Stücke: Lieferzeit 14-21 Tag (e) |
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SSM6K341NU,LF | Hersteller : Toshiba | Trans MOSFET N-CH Si 60V 6A Automotive 6-Pin UDFN-B EP T/R |
Produkt ist nicht verfügbar |
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SSM6K341NU,LF | Hersteller : Toshiba | Trans MOSFET N-CH Si 60V 6A Automotive AEC-Q101 6-Pin UDFN-B EP T/R |
Produkt ist nicht verfügbar |
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SSM6K341NU,LF | Hersteller : Toshiba | Trans MOSFET N-CH Si 60V 6A Automotive AEC-Q101 6-Pin UDFN-B EP T/R |
Produkt ist nicht verfügbar |