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SSM6K361NU,LF

SSM6K361NU,LF Toshiba

SSM6K361NU_datasheet_en_20240409-1289314.pdf Hersteller: Toshiba
MOSFETs LowON Res MOSFET ID=3.5A VDSS=100V
auf Bestellung 30306 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
4+0.74 EUR
10+0.47 EUR
100+0.36 EUR
500+0.3 EUR
1000+0.27 EUR
3000+0.23 EUR
6000+0.21 EUR
Mindestbestellmenge: 4
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Technische Details SSM6K361NU,LF Toshiba

Description: MOSFET N-CH 100V 3.5A 6UDFNB, Packaging: Tape & Reel (TR), Package / Case: 6-WDFN Exposed Pad, Mounting Type: Surface Mount, Operating Temperature: 150°C, Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 3.5A (Ta), Rds On (Max) @ Id, Vgs: 69mOhm @ 2A, 10V, Power Dissipation (Max): 1.25W (Ta), Vgs(th) (Max) @ Id: 2.5V @ 100µA, Supplier Device Package: 6-UDFNB (2x2), Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 100 V, Gate Charge (Qg) (Max) @ Vgs: 3.2 nC @ 4.5 V, Input Capacitance (Ciss) (Max) @ Vds: 430 pF @ 15 V.

Weitere Produktangebote SSM6K361NU,LF nach Preis ab 0.29 EUR bis 0.83 EUR

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SSM6K361NU,LF SSM6K361NU,LF Hersteller : Toshiba Semiconductor and Storage docget.jsp?did=56023&prodName=SSM6K361NU Description: MOSFET N-CH 100V 3.5A 6UDFNB
Packaging: Cut Tape (CT)
Package / Case: 6-WDFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: 150°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 3.5A (Ta)
Rds On (Max) @ Id, Vgs: 69mOhm @ 2A, 10V
Power Dissipation (Max): 1.25W (Ta)
Vgs(th) (Max) @ Id: 2.5V @ 100µA
Supplier Device Package: 6-UDFNB (2x2)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 3.2 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 430 pF @ 15 V
auf Bestellung 1171 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
22+0.83 EUR
34+0.53 EUR
100+0.43 EUR
500+0.33 EUR
1000+0.29 EUR
Mindestbestellmenge: 22
Im Einkaufswagen  Stück im Wert von  UAH
SSM6K361NU,LF SSM6K361NU,LF Hersteller : Toshiba Semiconductor and Storage docget.jsp?did=56023&prodName=SSM6K361NU Description: MOSFET N-CH 100V 3.5A 6UDFNB
Packaging: Tape & Reel (TR)
Package / Case: 6-WDFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: 150°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 3.5A (Ta)
Rds On (Max) @ Id, Vgs: 69mOhm @ 2A, 10V
Power Dissipation (Max): 1.25W (Ta)
Vgs(th) (Max) @ Id: 2.5V @ 100µA
Supplier Device Package: 6-UDFNB (2x2)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 3.2 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 430 pF @ 15 V
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Im Einkaufswagen  Stück im Wert von  UAH