SSM6K504NU,LF(T TOSHIBA
Hersteller: TOSHIBACategory: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 9A; Idm: 18A; 1.25W; uDFN6
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 9A
Pulsed drain current: 18A
Power dissipation: 1.25W
Case: uDFN6
Gate-source voltage: ±20V
On-state resistance: 26mΩ
Mounting: SMD
Gate charge: 4.8nC
Kind of package: reel; tape
Kind of channel: enhanced
Features of semiconductor devices: ESD protected gate
Anzahl je Verpackung: 5 Stücke
auf Bestellung 4040 Stücke:
Lieferzeit 7-14 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 335+ | 0.21 EUR |
| 400+ | 0.18 EUR |
| 445+ | 0.16 EUR |
| 485+ | 0.15 EUR |
| 515+ | 0.14 EUR |
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Technische Details SSM6K504NU,LF(T TOSHIBA
Category: SMD N channel transistors, Description: Transistor: N-MOSFET; unipolar; 30V; 9A; Idm: 18A; 1.25W; uDFN6, Type of transistor: N-MOSFET, Polarisation: unipolar, Drain-source voltage: 30V, Drain current: 9A, Pulsed drain current: 18A, Power dissipation: 1.25W, Case: uDFN6, Gate-source voltage: ±20V, On-state resistance: 26mΩ, Mounting: SMD, Gate charge: 4.8nC, Kind of package: reel; tape, Kind of channel: enhanced, Features of semiconductor devices: ESD protected gate, Anzahl je Verpackung: 5 Stücke.
Weitere Produktangebote SSM6K504NU,LF(T nach Preis ab 0.14 EUR bis 0.21 EUR
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SSM6K504NU,LF(T | Hersteller : TOSHIBA |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 30V; 9A; Idm: 18A; 1.25W; uDFN6 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 30V Drain current: 9A Pulsed drain current: 18A Power dissipation: 1.25W Case: uDFN6 Gate-source voltage: ±20V On-state resistance: 26mΩ Mounting: SMD Gate charge: 4.8nC Kind of package: reel; tape Kind of channel: enhanced Features of semiconductor devices: ESD protected gate |
auf Bestellung 4040 Stücke: Lieferzeit 14-21 Tag (e) |
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