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SSM6K504NU,LF

SSM6K504NU,LF Toshiba

SSM6K504NU_datasheet_en_20140404-1915952.pdf Hersteller: Toshiba
MOSFET Small Signal MOSFET
auf Bestellung 4761 Stücke:
Lieferzeit 14-28 Tag (e)
Anzahl Preis ohne MwSt
58+0.9 EUR
71+ 0.74 EUR
104+ 0.5 EUR
500+ 0.38 EUR
1000+ 0.28 EUR
3000+ 0.26 EUR
9000+ 0.22 EUR
Mindestbestellmenge: 58
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Technische Details SSM6K504NU,LF Toshiba

Description: MOSFET N-CH 30V 9A 6UDFNB, Packaging: Tape & Reel (TR), Package / Case: 6-WDFN Exposed Pad, Mounting Type: Surface Mount, Operating Temperature: 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 9A (Ta), Rds On (Max) @ Id, Vgs: 19.5mOhm @ 4A, 10V, Power Dissipation (Max): 1.25W (Ta), Vgs(th) (Max) @ Id: 2.5V @ 100µA, Supplier Device Package: 6-UDFNB (2x2), Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 30 V, Gate Charge (Qg) (Max) @ Vgs: 4.8 nC @ 4.5 V, Input Capacitance (Ciss) (Max) @ Vds: 620 pF @ 15 V.

Weitere Produktangebote SSM6K504NU,LF nach Preis ab 0.29 EUR bis 0.94 EUR

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SSM6K504NU,LF SSM6K504NU,LF Hersteller : Toshiba Semiconductor and Storage docget.jsp?did=13720&prodName=SSM6K504NU Description: MOSFET N-CH 30V 9A 6UDFNB
Packaging: Cut Tape (CT)
Package / Case: 6-WDFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 9A (Ta)
Rds On (Max) @ Id, Vgs: 19.5mOhm @ 4A, 10V
Power Dissipation (Max): 1.25W (Ta)
Vgs(th) (Max) @ Id: 2.5V @ 100µA
Supplier Device Package: 6-UDFNB (2x2)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 4.8 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 620 pF @ 15 V
auf Bestellung 4160 Stücke:
Lieferzeit 21-28 Tag (e)
Anzahl Preis ohne MwSt
28+0.94 EUR
35+ 0.75 EUR
100+ 0.51 EUR
500+ 0.38 EUR
1000+ 0.29 EUR
Mindestbestellmenge: 28
SSM6K504NU,LF SSM6K504NU,LF Hersteller : Toshiba Semiconductor and Storage docget.jsp?did=13720&prodName=SSM6K504NU Description: MOSFET N-CH 30V 9A 6UDFNB
Packaging: Tape & Reel (TR)
Package / Case: 6-WDFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 9A (Ta)
Rds On (Max) @ Id, Vgs: 19.5mOhm @ 4A, 10V
Power Dissipation (Max): 1.25W (Ta)
Vgs(th) (Max) @ Id: 2.5V @ 100µA
Supplier Device Package: 6-UDFNB (2x2)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 4.8 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 620 pF @ 15 V
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