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SSM6K513NU,LF

SSM6K513NU,LF Toshiba

748849B91EEA9F31D12CE5E1E38AEF0A61F0D02C9302351FE51BDAC21542C9CE.pdf
Hersteller: Toshiba
MOSFETs Small Low ON Resistane MOSFETs
auf Bestellung 24739 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
4+0.79 EUR
10+0.54 EUR
100+0.4 EUR
500+0.33 EUR
1000+0.29 EUR
3000+0.2 EUR
Mindestbestellmenge: 4
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Technische Details SSM6K513NU,LF Toshiba

Description: MOSFET N-CH 30V 15A 6UDFNB, Input Capacitance (Ciss) (Max) @ Vds: 1130 pF @ 15 V, Gate Charge (Qg) (Max) @ Vgs: 7.5 nC @ 4.5 V, Drain to Source Voltage (Vdss): 30 V, Vgs (Max): ±20V, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Part Status: Active, Supplier Device Package: 6-UDFNB (2x2), Vgs(th) (Max) @ Id: 2.1V @ 100µA, Power Dissipation (Max): 1.25W (Ta), Rds On (Max) @ Id, Vgs: 8.9mOhm @ 4A, 10V, Current - Continuous Drain (Id) @ 25°C: 15A (Ta), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: 150°C (TA), Mounting Type: Surface Mount, Package / Case: 6-WDFN Exposed Pad, Packaging: Tape & Reel (TR).

Weitere Produktangebote SSM6K513NU,LF nach Preis ab 0.29 EUR bis 1.07 EUR

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SSM6K513NU,LF SSM6K513NU,LF Hersteller : Toshiba Semiconductor and Storage docget.jsp?did=53148&prodName=SSM6K513NU Description: MOSFET N-CH 30V 15A 6UDFNB
Current - Continuous Drain (Id) @ 25°C: 15A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TA)
Mounting Type: Surface Mount
Package / Case: 6-WDFN Exposed Pad
Packaging: Cut Tape (CT)
Input Capacitance (Ciss) (Max) @ Vds: 1130 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 7.5 nC @ 4.5 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: 6-UDFNB (2x2)
Vgs(th) (Max) @ Id: 2.1V @ 100µA
Power Dissipation (Max): 1.25W (Ta)
Rds On (Max) @ Id, Vgs: 8.9mOhm @ 4A, 10V
auf Bestellung 1338 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
17+1.07 EUR
27+0.67 EUR
100+0.43 EUR
500+0.33 EUR
1000+0.29 EUR
Mindestbestellmenge: 17
Im Einkaufswagen  Stück im Wert von  UAH
SSM6K513NU,LF SSM6K513NU,LF Hersteller : Toshiba Semiconductor and Storage docget.jsp?did=53148&prodName=SSM6K513NU Description: MOSFET N-CH 30V 15A 6UDFNB
Input Capacitance (Ciss) (Max) @ Vds: 1130 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 7.5 nC @ 4.5 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: 6-UDFNB (2x2)
Vgs(th) (Max) @ Id: 2.1V @ 100µA
Power Dissipation (Max): 1.25W (Ta)
Rds On (Max) @ Id, Vgs: 8.9mOhm @ 4A, 10V
Current - Continuous Drain (Id) @ 25°C: 15A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TA)
Mounting Type: Surface Mount
Package / Case: 6-WDFN Exposed Pad
Packaging: Tape & Reel (TR)
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Im Einkaufswagen  Stück im Wert von  UAH