| Anzahl | Privatkunde |
|---|---|
| 3+ | 1.17 EUR |
| 10+ | 0.76 EUR |
| 100+ | 0.51 EUR |
| 500+ | 0.39 EUR |
| 1000+ | 0.36 EUR |
| 3000+ | 0.32 EUR |
| 6000+ | 0.27 EUR |
Produktrezensionen
Produktbewertung abgeben
Technische Details SSM6K514NU,LF Toshiba
Description: MOSFET N-CH 40V 12A 6UDFNB, Rds On (Max) @ Id, Vgs: 11.6mOhm @ 4A, 10V, Current - Continuous Drain (Id) @ 25°C: 12A (Ta), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: 150°C, Mounting Type: Surface Mount, Package / Case: 6-WDFN Exposed Pad, Packaging: Tape & Reel (TR), Input Capacitance (Ciss) (Max) @ Vds: 1110 pF @ 20 V, Gate Charge (Qg) (Max) @ Vgs: 7.5 nC @ 4.5 V, Drain to Source Voltage (Vdss): 40 V, Vgs (Max): ±20V, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Part Status: Active, Supplier Device Package: 6-UDFNB (2x2), Vgs(th) (Max) @ Id: 2.4V @ 100µA, Power Dissipation (Max): 2.5W (Ta).
Weitere Produktangebote SSM6K514NU,LF
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Privatkunde |
|---|---|---|---|---|---|
 |
SSM6K514NU,LF | Toshiba Semiconductor and Storage |
 Description: MOSFET N-CH 40V 12A 6UDFNBRds On (Max) @ Id, Vgs: 11.6mOhm @ 4A, 10V Current - Continuous Drain (Id) @ 25°C: 12A (Ta) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: 150°C Mounting Type: Surface Mount Package / Case: 6-WDFN Exposed Pad Packaging: Tape & Reel (TR) Input Capacitance (Ciss) (Max) @ Vds: 1110 pF @ 20 V Gate Charge (Qg) (Max) @ Vgs: 7.5 nC @ 4.5 V Drain to Source Voltage (Vdss): 40 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Part Status: Active Supplier Device Package: 6-UDFNB (2x2) Vgs(th) (Max) @ Id: 2.4V @ 100µA Power Dissipation (Max): 2.5W (Ta) |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 3000 Stücke Im Einkaufswagen Stück im Wert von UAH |
|
|
SSM6K514NU,LF | Toshiba Semiconductor and Storage |
Description: MOSFET N-CH 40V 12A 6UDFNB Input Capacitance (Ciss) (Max) @ Vds: 1110 pF @ 20 V Gate Charge (Qg) (Max) @ Vgs: 7.5 nC @ 4.5 V Drain to Source Voltage (Vdss): 40 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Part Status: Active Supplier Device Package: 6-UDFNB (2x2) Vgs(th) (Max) @ Id: 2.4V @ 100µA Power Dissipation (Max): 2.5W (Ta) Rds On (Max) @ Id, Vgs: 11.6mOhm @ 4A, 10V Current - Continuous Drain (Id) @ 25°C: 12A (Ta) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: 150°C Mounting Type: Surface Mount Package / Case: 6-WDFN Exposed Pad Packaging: Cut Tape (CT) |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
| SSM6K514NU,LF |
|
Hersteller: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 40V 12A 6UDFNB
Rds On (Max) @ Id, Vgs: 11.6mOhm @ 4A, 10V
Current - Continuous Drain (Id) @ 25°C: 12A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C
Mounting Type: Surface Mount
Package / Case: 6-WDFN Exposed Pad
Packaging: Tape & Reel (TR)
Input Capacitance (Ciss) (Max) @ Vds: 1110 pF @ 20 V
Gate Charge (Qg) (Max) @ Vgs: 7.5 nC @ 4.5 V
Drain to Source Voltage (Vdss): 40 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: 6-UDFNB (2x2)
Vgs(th) (Max) @ Id: 2.4V @ 100µA
Power Dissipation (Max): 2.5W (Ta)
Description: MOSFET N-CH 40V 12A 6UDFNB
Rds On (Max) @ Id, Vgs: 11.6mOhm @ 4A, 10V
Current - Continuous Drain (Id) @ 25°C: 12A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C
Mounting Type: Surface Mount
Package / Case: 6-WDFN Exposed Pad
Packaging: Tape & Reel (TR)
Input Capacitance (Ciss) (Max) @ Vds: 1110 pF @ 20 V
Gate Charge (Qg) (Max) @ Vgs: 7.5 nC @ 4.5 V
Drain to Source Voltage (Vdss): 40 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: 6-UDFNB (2x2)
Vgs(th) (Max) @ Id: 2.4V @ 100µA
Power Dissipation (Max): 2.5W (Ta)
Produkt ist nicht verfügbar
Mindestbestellmenge: 3000 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| SSM6K514NU,LF |
|
Hersteller: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 40V 12A 6UDFNB
Input Capacitance (Ciss) (Max) @ Vds: 1110 pF @ 20 V
Gate Charge (Qg) (Max) @ Vgs: 7.5 nC @ 4.5 V
Drain to Source Voltage (Vdss): 40 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: 6-UDFNB (2x2)
Vgs(th) (Max) @ Id: 2.4V @ 100µA
Power Dissipation (Max): 2.5W (Ta)
Rds On (Max) @ Id, Vgs: 11.6mOhm @ 4A, 10V
Current - Continuous Drain (Id) @ 25°C: 12A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C
Mounting Type: Surface Mount
Package / Case: 6-WDFN Exposed Pad
Packaging: Cut Tape (CT)
Description: MOSFET N-CH 40V 12A 6UDFNB
Input Capacitance (Ciss) (Max) @ Vds: 1110 pF @ 20 V
Gate Charge (Qg) (Max) @ Vgs: 7.5 nC @ 4.5 V
Drain to Source Voltage (Vdss): 40 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: 6-UDFNB (2x2)
Vgs(th) (Max) @ Id: 2.4V @ 100µA
Power Dissipation (Max): 2.5W (Ta)
Rds On (Max) @ Id, Vgs: 11.6mOhm @ 4A, 10V
Current - Continuous Drain (Id) @ 25°C: 12A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C
Mounting Type: Surface Mount
Package / Case: 6-WDFN Exposed Pad
Packaging: Cut Tape (CT)
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH