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SSM6K517NU,LF

SSM6K517NU,LF Toshiba Semiconductor and Storage

docget.jsp?did=69320&prodName=SSM6K517NU Hersteller: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 30V 6A 6UDFNB
Packaging: Tape & Reel (TR)
Package / Case: 6-WDFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: 150°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 6A (Ta)
Rds On (Max) @ Id, Vgs: 39.1mOhm @ 2A, 4.5V
Power Dissipation (Max): 1.25W (Ta)
Vgs(th) (Max) @ Id: 1V @ 1mA
Supplier Device Package: 6-UDFNB (2x2)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Vgs (Max): +12V, -8V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 3.2 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 310 pF @ 15 V
auf Bestellung 3000 Stücke:
Lieferzeit 21-28 Tag (e)
Anzahl Preis ohne MwSt
3000+0.32 EUR
Mindestbestellmenge: 3000
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Technische Details SSM6K517NU,LF Toshiba Semiconductor and Storage

Description: MOSFET N-CH 30V 6A 6UDFNB, Packaging: Tape & Reel (TR), Package / Case: 6-WDFN Exposed Pad, Mounting Type: Surface Mount, Operating Temperature: 150°C, Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 6A (Ta), Rds On (Max) @ Id, Vgs: 39.1mOhm @ 2A, 4.5V, Power Dissipation (Max): 1.25W (Ta), Vgs(th) (Max) @ Id: 1V @ 1mA, Supplier Device Package: 6-UDFNB (2x2), Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V, Vgs (Max): +12V, -8V, Drain to Source Voltage (Vdss): 30 V, Gate Charge (Qg) (Max) @ Vgs: 3.2 nC @ 4.5 V, Input Capacitance (Ciss) (Max) @ Vds: 310 pF @ 15 V.

Weitere Produktangebote SSM6K517NU,LF nach Preis ab 0.29 EUR bis 0.96 EUR

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SSM6K517NU,LF SSM6K517NU,LF Hersteller : Toshiba SSM6K517NU_datasheet_en_20200602-1902137.pdf MOSFET MOS TRANSISTOR
auf Bestellung 4977 Stücke:
Lieferzeit 14-28 Tag (e)
Anzahl Preis ohne MwSt
57+0.92 EUR
67+ 0.78 EUR
100+ 0.57 EUR
500+ 0.44 EUR
1000+ 0.37 EUR
3000+ 0.34 EUR
9000+ 0.29 EUR
Mindestbestellmenge: 57
SSM6K517NU,LF SSM6K517NU,LF Hersteller : Toshiba Semiconductor and Storage docget.jsp?did=69320&prodName=SSM6K517NU Description: MOSFET N-CH 30V 6A 6UDFNB
Packaging: Cut Tape (CT)
Package / Case: 6-WDFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: 150°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 6A (Ta)
Rds On (Max) @ Id, Vgs: 39.1mOhm @ 2A, 4.5V
Power Dissipation (Max): 1.25W (Ta)
Vgs(th) (Max) @ Id: 1V @ 1mA
Supplier Device Package: 6-UDFNB (2x2)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Vgs (Max): +12V, -8V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 3.2 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 310 pF @ 15 V
auf Bestellung 6804 Stücke:
Lieferzeit 21-28 Tag (e)
Anzahl Preis ohne MwSt
28+0.96 EUR
33+ 0.81 EUR
100+ 0.56 EUR
500+ 0.44 EUR
1000+ 0.36 EUR
Mindestbestellmenge: 28
SSM6K517NU,LF
Produktcode: 179908 		docget.jsp?did=69320&prodName=SSM6K517NU Transistoren > MOSFET N-CH
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