auf Bestellung 63268 Stücke:
Lieferzeit 14-28 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 44+ | 1.21 EUR |
| 52+ | 1.02 EUR |
| 100+ | 0.71 EUR |
| 500+ | 0.56 EUR |
| 1000+ | 0.45 EUR |
| 3000+ | 0.38 EUR |
| 9000+ | 0.35 EUR |
Produktrezensionen
Produktbewertung abgeben
Technische Details SSM6K781G,LF Toshiba
Description: MOSFET N-CH 12V 7A 6WCSP6C, Packaging: Tape & Reel (TR), Package / Case: 6-UFBGA, WLCSP, Mounting Type: Surface Mount, Operating Temperature: 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 7A (Ta), Rds On (Max) @ Id, Vgs: 18mOhm @ 1.5A, 4.5V, Power Dissipation (Max): 1.6W (Ta), Vgs(th) (Max) @ Id: 1V @ 250µA, Supplier Device Package: 6-WCSPC (1.5x1.0), Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V, Vgs (Max): ±8V, Drain to Source Voltage (Vdss): 12 V, Gate Charge (Qg) (Max) @ Vgs: 5.4 nC @ 4.5 V, Input Capacitance (Ciss) (Max) @ Vds: 600 pF @ 6 V.
Weitere Produktangebote SSM6K781G,LF
| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis ohne MwSt |
|---|---|---|---|---|---|
| SSM6K781G,LF | Hersteller : Toshiba |
 Trans MOSFET N-CH Si 12V 7A 6-Pin WCSP-C T/R |
Produkt ist nicht verfügbar |
||
 |
SSM6K781G,LF | Hersteller : Toshiba Semiconductor and Storage |
Description: MOSFET N-CH 12V 7A 6WCSP6C Packaging: Tape & Reel (TR) Package / Case: 6-UFBGA, WLCSP Mounting Type: Surface Mount Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 7A (Ta) Rds On (Max) @ Id, Vgs: 18mOhm @ 1.5A, 4.5V Power Dissipation (Max): 1.6W (Ta) Vgs(th) (Max) @ Id: 1V @ 250µA Supplier Device Package: 6-WCSPC (1.5x1.0) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V Vgs (Max): ±8V Drain to Source Voltage (Vdss): 12 V Gate Charge (Qg) (Max) @ Vgs: 5.4 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 600 pF @ 6 V |
Produkt ist nicht verfügbar |
|
|
|
SSM6K781G,LF | Hersteller : Toshiba Semiconductor and Storage |
Description: MOSFET N-CH 12V 7A 6WCSP6C Packaging: Cut Tape (CT) Package / Case: 6-UFBGA, WLCSP Mounting Type: Surface Mount Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 7A (Ta) Rds On (Max) @ Id, Vgs: 18mOhm @ 1.5A, 4.5V Power Dissipation (Max): 1.6W (Ta) Vgs(th) (Max) @ Id: 1V @ 250µA Supplier Device Package: 6-WCSPC (1.5x1.0) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V Vgs (Max): ±8V Drain to Source Voltage (Vdss): 12 V Gate Charge (Qg) (Max) @ Vgs: 5.4 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 600 pF @ 6 V |
Produkt ist nicht verfügbar |