SSM6K819R,LF

SSM6K819R,LF Toshiba Semiconductor and Storage


docget.jsp?did=65097&prodName=SSM6K819R Hersteller: Toshiba Semiconductor and Storage
Description: N-CH MOSFET, 100 V, 10 A, 0.0258
Packaging: Tape & Reel (TR)
Package / Case: 6-SMD, Flat Leads
Mounting Type: Surface Mount
Operating Temperature: 175°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 10A (Ta)
Rds On (Max) @ Id, Vgs: 25.8mOhm @ 4A, 10V
Power Dissipation (Max): 1.5W (Ta)
Vgs(th) (Max) @ Id: 2.5V @ 100µA
Supplier Device Package: 6-TSOP-F
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 8.5 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 1110 pF @ 15 V
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 9000 Stücke:

Lieferzeit 10-14 Tag (e)
Anzahl Preis
3000+0.43 EUR
6000+0.39 EUR
9000+0.38 EUR
Mindestbestellmenge: 3000
Im Einkaufswagen  Stück im Wert von  UAH
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Technische Details SSM6K819R,LF Toshiba Semiconductor and Storage

Description: N-CH MOSFET, 100 V, 10 A, 0.0258, Packaging: Tape & Reel (TR), Package / Case: 6-SMD, Flat Leads, Mounting Type: Surface Mount, Operating Temperature: 175°C, Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 10A (Ta), Rds On (Max) @ Id, Vgs: 25.8mOhm @ 4A, 10V, Power Dissipation (Max): 1.5W (Ta), Vgs(th) (Max) @ Id: 2.5V @ 100µA, Supplier Device Package: 6-TSOP-F, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 100 V, Gate Charge (Qg) (Max) @ Vgs: 8.5 nC @ 4.5 V, Input Capacitance (Ciss) (Max) @ Vds: 1110 pF @ 15 V, Grade: Automotive, Qualification: AEC-Q101.

Weitere Produktangebote SSM6K819R,LF nach Preis ab 0.37 EUR bis 1.72 EUR

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SSM6K819R,LF SSM6K819R,LF Hersteller : Toshiba SSM6K819R_datasheet_en_20210528-3318924.pdf MOSFETs
auf Bestellung 10941 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3+1.02 EUR
10+0.90 EUR
100+0.62 EUR
500+0.52 EUR
1000+0.44 EUR
2500+0.37 EUR
Mindestbestellmenge: 3
Im Einkaufswagen  Stück im Wert von  UAH
SSM6K819R,LF SSM6K819R,LF Hersteller : Toshiba Semiconductor and Storage docget.jsp?did=65097&prodName=SSM6K819R Description: N-CH MOSFET, 100 V, 10 A, 0.0258
Packaging: Cut Tape (CT)
Package / Case: 6-SMD, Flat Leads
Mounting Type: Surface Mount
Operating Temperature: 175°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 10A (Ta)
Rds On (Max) @ Id, Vgs: 25.8mOhm @ 4A, 10V
Power Dissipation (Max): 1.5W (Ta)
Vgs(th) (Max) @ Id: 2.5V @ 100µA
Supplier Device Package: 6-TSOP-F
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 8.5 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 1110 pF @ 15 V
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 11892 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
11+1.72 EUR
17+1.07 EUR
100+0.70 EUR
500+0.54 EUR
1000+0.49 EUR
Mindestbestellmenge: 11
Im Einkaufswagen  Stück im Wert von  UAH