SSM6K819R,LXHF Toshiba Semiconductor and Storage
Hersteller: Toshiba Semiconductor and Storage
Description: AUTO AEC-Q SS MOS N-CH LOGIC-LEV
Qualification: AEC-Q101
Grade: Automotive
Input Capacitance (Ciss) (Max) @ Vds: 1110 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 8.5 nC @ 4.5 V
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: 6-TSOP-F
Vgs(th) (Max) @ Id: 2.5V @ 100µA
Power Dissipation (Max): 1.5W (Ta)
Rds On (Max) @ Id, Vgs: 25.8mOhm @ 4A, 10V
Current - Continuous Drain (Id) @ 25°C: 10A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 175°C
Mounting Type: Surface Mount
Package / Case: 6-SMD, Flat Leads
Packaging: Tape & Reel (TR)
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Technische Details SSM6K819R,LXHF Toshiba Semiconductor and Storage
Description: AUTO AEC-Q SS MOS N-CH LOGIC-LEV, Qualification: AEC-Q101, Grade: Automotive, Input Capacitance (Ciss) (Max) @ Vds: 1110 pF @ 15 V, Gate Charge (Qg) (Max) @ Vgs: 8.5 nC @ 4.5 V, Drain to Source Voltage (Vdss): 100 V, Vgs (Max): ±20V, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Part Status: Active, Supplier Device Package: 6-TSOP-F, Vgs(th) (Max) @ Id: 2.5V @ 100µA, Power Dissipation (Max): 1.5W (Ta), Rds On (Max) @ Id, Vgs: 25.8mOhm @ 4A, 10V, Current - Continuous Drain (Id) @ 25°C: 10A (Ta), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: 175°C, Mounting Type: Surface Mount, Package / Case: 6-SMD, Flat Leads, Packaging: Tape & Reel (TR).
Weitere Produktangebote SSM6K819R,LXHF nach Preis ab 0.77 EUR bis 2.93 EUR
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SSM6K819R,LXHF | Toshiba |
MOSFETs AUTO AEC-Q SS MOS N-ch Logic-Level Gate Drive VDSS:100V IC:10A PD:1.5W TSOP6F |
auf Bestellung 7784 Stücke: Lieferzeit 10-14 Tag (e) |
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SSM6K819R,LXHF | Toshiba Semiconductor and Storage |
Description: AUTO AEC-Q SS MOS N-CH LOGIC-LEV Qualification: AEC-Q101 Grade: Automotive Input Capacitance (Ciss) (Max) @ Vds: 1110 pF @ 15 V Gate Charge (Qg) (Max) @ Vgs: 8.5 nC @ 4.5 V Drain to Source Voltage (Vdss): 100 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Part Status: Active Supplier Device Package: 6-TSOP-F Vgs(th) (Max) @ Id: 2.5V @ 100µA Power Dissipation (Max): 1.5W (Ta) Rds On (Max) @ Id, Vgs: 25.8mOhm @ 4A, 10V Current - Continuous Drain (Id) @ 25°C: 10A (Ta) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: 175°C Mounting Type: Surface Mount Package / Case: 6-SMD, Flat Leads Packaging: Cut Tape (CT) |
auf Bestellung 3028 Stücke: Lieferzeit 10-14 Tag (e) |
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| SSM6K819R,LXHF |
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Hersteller: Toshiba
MOSFETs AUTO AEC-Q SS MOS N-ch Logic-Level Gate Drive VDSS:100V IC:10A PD:1.5W TSOP6F
MOSFETs AUTO AEC-Q SS MOS N-ch Logic-Level Gate Drive VDSS:100V IC:10A PD:1.5W TSOP6F
auf Bestellung 7784 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 2+ | 2.81 EUR |
| 10+ | 1.77 EUR |
| 100+ | 1.19 EUR |
| 500+ | 0.94 EUR |
| 1000+ | 0.86 EUR |
| 3000+ | 0.77 EUR |
| SSM6K819R,LXHF |
|
Hersteller: Toshiba Semiconductor and Storage
Description: AUTO AEC-Q SS MOS N-CH LOGIC-LEV
Qualification: AEC-Q101
Grade: Automotive
Input Capacitance (Ciss) (Max) @ Vds: 1110 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 8.5 nC @ 4.5 V
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: 6-TSOP-F
Vgs(th) (Max) @ Id: 2.5V @ 100µA
Power Dissipation (Max): 1.5W (Ta)
Rds On (Max) @ Id, Vgs: 25.8mOhm @ 4A, 10V
Current - Continuous Drain (Id) @ 25°C: 10A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 175°C
Mounting Type: Surface Mount
Package / Case: 6-SMD, Flat Leads
Packaging: Cut Tape (CT)
Description: AUTO AEC-Q SS MOS N-CH LOGIC-LEV
Qualification: AEC-Q101
Grade: Automotive
Input Capacitance (Ciss) (Max) @ Vds: 1110 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 8.5 nC @ 4.5 V
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: 6-TSOP-F
Vgs(th) (Max) @ Id: 2.5V @ 100µA
Power Dissipation (Max): 1.5W (Ta)
Rds On (Max) @ Id, Vgs: 25.8mOhm @ 4A, 10V
Current - Continuous Drain (Id) @ 25°C: 10A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 175°C
Mounting Type: Surface Mount
Package / Case: 6-SMD, Flat Leads
Packaging: Cut Tape (CT)
auf Bestellung 3028 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 8+ | 2.93 EUR |
| 12+ | 1.86 EUR |
| 100+ | 1.24 EUR |
| 500+ | 0.98 EUR |
| 1000+ | 0.89 EUR |