auf Bestellung 11900 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 4+ | 0.83 EUR |
| 10+ | 0.69 EUR |
| 100+ | 0.47 EUR |
| 500+ | 0.35 EUR |
| 1000+ | 0.27 EUR |
| 2500+ | 0.23 EUR |
| 10000+ | 0.21 EUR |
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Technische Details SSM6K824R,LF Toshiba
Description: N-CH MOSFET 20V, +/-8V, 6A ,0.03, Packaging: Tape & Reel (TR), Package / Case: 6-SMD, Flat Leads, Mounting Type: Surface Mount, Operating Temperature: 150°C, Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 6A (Ta), Rds On (Max) @ Id, Vgs: 33mOhm @ 4A, 4.5V, Power Dissipation (Max): 1.5W (Ta), Vgs(th) (Max) @ Id: 1V @ 1mA, Supplier Device Package: 6-TSOP-F, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V, Vgs (Max): ±8V, Drain to Source Voltage (Vdss): 20 V, Gate Charge (Qg) (Max) @ Vgs: 3.6 nC @ 4.5 V, Input Capacitance (Ciss) (Max) @ Vds: 410 pF @ 10 V.
Weitere Produktangebote SSM6K824R,LF
| Foto | Bezeichnung | Hersteller | Beschreibung |
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SSM6K824R,LF | Hersteller : Toshiba Semiconductor and Storage |
 Description: N-CH MOSFET 20V, +/-8V, 6A ,0.03Packaging: Tape & Reel (TR) Package / Case: 6-SMD, Flat Leads Mounting Type: Surface Mount Operating Temperature: 150°C Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 6A (Ta) Rds On (Max) @ Id, Vgs: 33mOhm @ 4A, 4.5V Power Dissipation (Max): 1.5W (Ta) Vgs(th) (Max) @ Id: 1V @ 1mA Supplier Device Package: 6-TSOP-F Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V Vgs (Max): ±8V Drain to Source Voltage (Vdss): 20 V Gate Charge (Qg) (Max) @ Vgs: 3.6 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 410 pF @ 10 V |
Produkt ist nicht verfügbar |
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SSM6K824R,LF | Hersteller : Toshiba Semiconductor and Storage |
Description: N-CH MOSFET 20V, +/-8V, 6A ,0.03 Packaging: Cut Tape (CT) Package / Case: 6-SMD, Flat Leads Mounting Type: Surface Mount Operating Temperature: 150°C Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 6A (Ta) Rds On (Max) @ Id, Vgs: 33mOhm @ 4A, 4.5V Power Dissipation (Max): 1.5W (Ta) Vgs(th) (Max) @ Id: 1V @ 1mA Supplier Device Package: 6-TSOP-F Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V Vgs (Max): ±8V Drain to Source Voltage (Vdss): 20 V Gate Charge (Qg) (Max) @ Vgs: 3.6 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 410 pF @ 10 V |
Produkt ist nicht verfügbar |