SSM6K824R,LF

SSM6K824R,LF Toshiba Semiconductor and Storage


docget.jsp?did=141471&prodName=SSM6K824R Hersteller: Toshiba Semiconductor and Storage
Description: N-CH MOSFET 20V, +/-8V, 6A ,0.03
Packaging: Tape & Reel (TR)
Package / Case: 6-SMD, Flat Leads
Mounting Type: Surface Mount
Operating Temperature: 150°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 6A (Ta)
Rds On (Max) @ Id, Vgs: 33mOhm @ 4A, 4.5V
Power Dissipation (Max): 1.5W (Ta)
Vgs(th) (Max) @ Id: 1V @ 1mA
Supplier Device Package: 6-TSOP-F
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 3.6 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 410 pF @ 10 V
auf Bestellung 3000 Stücke:

Lieferzeit 10-14 Tag (e)
Anzahl Preis
3000+0.20 EUR
Mindestbestellmenge: 3000
Im Einkaufswagen  Stück im Wert von  UAH
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Technische Details SSM6K824R,LF Toshiba Semiconductor and Storage

Description: N-CH MOSFET 20V, +/-8V, 6A ,0.03, Packaging: Tape & Reel (TR), Package / Case: 6-SMD, Flat Leads, Mounting Type: Surface Mount, Operating Temperature: 150°C, Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 6A (Ta), Rds On (Max) @ Id, Vgs: 33mOhm @ 4A, 4.5V, Power Dissipation (Max): 1.5W (Ta), Vgs(th) (Max) @ Id: 1V @ 1mA, Supplier Device Package: 6-TSOP-F, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V, Vgs (Max): ±8V, Drain to Source Voltage (Vdss): 20 V, Gate Charge (Qg) (Max) @ Vgs: 3.6 nC @ 4.5 V, Input Capacitance (Ciss) (Max) @ Vds: 410 pF @ 10 V.

Weitere Produktangebote SSM6K824R,LF nach Preis ab 0.18 EUR bis 0.77 EUR

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SSM6K824R,LF SSM6K824R,LF Hersteller : Toshiba Semiconductor and Storage docget.jsp?did=141471&prodName=SSM6K824R Description: N-CH MOSFET 20V, +/-8V, 6A ,0.03
Packaging: Cut Tape (CT)
Package / Case: 6-SMD, Flat Leads
Mounting Type: Surface Mount
Operating Temperature: 150°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 6A (Ta)
Rds On (Max) @ Id, Vgs: 33mOhm @ 4A, 4.5V
Power Dissipation (Max): 1.5W (Ta)
Vgs(th) (Max) @ Id: 1V @ 1mA
Supplier Device Package: 6-TSOP-F
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 3.6 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 410 pF @ 10 V
auf Bestellung 5940 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
25+0.72 EUR
37+0.48 EUR
100+0.33 EUR
500+0.26 EUR
1000+0.23 EUR
Mindestbestellmenge: 25
Im Einkaufswagen  Stück im Wert von  UAH
SSM6K824R,LF SSM6K824R,LF Hersteller : Toshiba SSM6K824R_datasheet_en_20211102-3082756.pdf MOSFETs
auf Bestellung 11875 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
4+0.77 EUR
10+0.61 EUR
100+0.34 EUR
1000+0.23 EUR
2500+0.18 EUR
Mindestbestellmenge: 4
Im Einkaufswagen  Stück im Wert von  UAH