SSM6L09FUTE85LF Toshiba Semiconductor and Storage
Hersteller: Toshiba Semiconductor and StorageDescription: MOSFET N/P-CH 30V 0.4A US6
Packaging: Tape & Reel (TR)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Configuration: N and P-Channel
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 300mW
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 400mA, 200mA
Input Capacitance (Ciss) (Max) @ Vds: 20pF @ 5V
Rds On (Max) @ Id, Vgs: 700mOhm @ 200MA, 10V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 1.8V @ 100µA
Supplier Device Package: US6
Part Status: Not For New Designs
auf Bestellung 51000 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 3000+ | 0.13 EUR |
| 9000+ | 0.12 EUR |
| 30000+ | 0.11 EUR |
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Technische Details SSM6L09FUTE85LF Toshiba Semiconductor and Storage
Description: MOSFET N/P-CH 30V 0.4A US6, Packaging: Tape & Reel (TR), Package / Case: 6-TSSOP, SC-88, SOT-363, Mounting Type: Surface Mount, Configuration: N and P-Channel, Operating Temperature: 150°C (TJ), Technology: MOSFET (Metal Oxide), Power - Max: 300mW, Drain to Source Voltage (Vdss): 30V, Current - Continuous Drain (Id) @ 25°C: 400mA, 200mA, Input Capacitance (Ciss) (Max) @ Vds: 20pF @ 5V, Rds On (Max) @ Id, Vgs: 700mOhm @ 200MA, 10V, FET Feature: Logic Level Gate, Vgs(th) (Max) @ Id: 1.8V @ 100µA, Supplier Device Package: US6, Part Status: Not For New Designs.
Weitere Produktangebote SSM6L09FUTE85LF nach Preis ab 0.12 EUR bis 0.74 EUR
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SSM6L09FUTE85LF | Hersteller : Toshiba |
MOSFETs N-Ch P-Ch Sg FET 0.4A -0.2A 30V -30V |
auf Bestellung 817706 Stücke: Lieferzeit 10-14 Tag (e) |
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SSM6L09FUTE85LF | Hersteller : Toshiba Semiconductor and Storage |
Description: MOSFET N/P-CH 30V 0.4A US6 Packaging: Cut Tape (CT) Package / Case: 6-TSSOP, SC-88, SOT-363 Mounting Type: Surface Mount Configuration: N and P-Channel Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 300mW Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 400mA, 200mA Input Capacitance (Ciss) (Max) @ Vds: 20pF @ 5V Rds On (Max) @ Id, Vgs: 700mOhm @ 200MA, 10V FET Feature: Logic Level Gate Vgs(th) (Max) @ Id: 1.8V @ 100µA Supplier Device Package: US6 Part Status: Not For New Designs |
auf Bestellung 53989 Stücke: Lieferzeit 10-14 Tag (e) |
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