SSM6L14FE(TE85L,F) Toshiba Semiconductor and Storage
Hersteller: Toshiba Semiconductor and Storage
Description: MOSFET N/P-CH 20V 0.8A ES6
Packaging: Tape & Reel (TR)
Package / Case: SOT-563, SOT-666
Mounting Type: Surface Mount
Configuration: N and P-Channel
Operating Temperature: 150°C
Technology: MOSFET (Metal Oxide)
Power - Max: 150mW (Ta)
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 800mA (Ta), 720mA (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 90pF @ 10V, 110pF @ 10V
Rds On (Max) @ Id, Vgs: 240mOhm @ 500mA, 4.5V, 300mOhm @ 400mA, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 2nC @ 4.5V, 1.76nC @ 4.5V
FET Feature: Logic Level Gate, 1.5V Drive
Vgs(th) (Max) @ Id: 1V @ 1mA
Supplier Device Package: ES6
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Technische Details SSM6L14FE(TE85L,F) Toshiba Semiconductor and Storage
Description: TOSHIBA - SSM6L14FE(TE85L,F) - Dual-MOSFET, n- und p-Kanal, 20 V, 20 V, 800 mA, 720 mA, 0.24 ohm, tariffCode: 85412900, euEccn: NLR, rohsCompliant: YES, Dauer-Drainstrom Id, p-Kanal: 720mA, hazardous: false, rohsPhthalatesCompliant: YES, Qualifikation: -, isCanonical: Y, Drain-Source-Spannung Vds, p-Kanal: 20V, Dauer-Drainstrom Id, n-Kanal: 800mA, Drain-Source-Durchgangswiderstand, p-Kanal: 0.3ohm, Verlustleistung, p-Kanal: 150mW, Drain-Source-Spannung Vds, n-Kanal: 20V, SVHC: To Be Advised, Bauform - Transistor: SOT-563, Anzahl der Pins: 6Pin(s), Produktpalette: -, Drain-Source-Durchgangswiderstand, n-Kanal: 0.24ohm, productTraceability: Yes-Date/Lot Code, usEccn: EAR99, Kanaltyp: n- und p-Kanal, Verlustleistung, n-Kanal: 150mW, Betriebstemperatur, max.: 150°C.
Weitere Produktangebote SSM6L14FE(TE85L,F) nach Preis ab 0.17 EUR bis 0.9 EUR
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SSM6L14FE(TE85L,F) | Toshiba Semiconductor and Storage |
Description: MOSFET N/P-CH 20V 0.8A ES6 Packaging: Cut Tape (CT) Package / Case: SOT-563, SOT-666 Mounting Type: Surface Mount Configuration: N and P-Channel Operating Temperature: 150°C Technology: MOSFET (Metal Oxide) Power - Max: 150mW (Ta) Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 800mA (Ta), 720mA (Ta) Input Capacitance (Ciss) (Max) @ Vds: 90pF @ 10V, 110pF @ 10V Rds On (Max) @ Id, Vgs: 240mOhm @ 500mA, 4.5V, 300mOhm @ 400mA, 4.5V Gate Charge (Qg) (Max) @ Vgs: 2nC @ 4.5V, 1.76nC @ 4.5V FET Feature: Logic Level Gate, 1.5V Drive Vgs(th) (Max) @ Id: 1V @ 1mA Supplier Device Package: ES6 |
auf Bestellung 26440 Stücke: Lieferzeit 10-14 Tag (e) |
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SSM6L14FE(TE85L,F) | Toshiba |
MOSFETs LowON Res MOSFET ID=0.8A VDSS=20V |
auf Bestellung 247587 Stücke: Lieferzeit 10-14 Tag (e) |
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SSM6L14FE(TE85L,F) | TOSHIBA |
Description: TOSHIBA - SSM6L14FE(TE85L,F) - Dual-MOSFET, n- und p-Kanal, 20 V, 20 V, 800 mA, 720 mA, 0.24 ohm tariffCode: 85412900 euEccn: NLR rohsCompliant: YES Dauer-Drainstrom Id, p-Kanal: 720mA hazardous: false rohsPhthalatesCompliant: YES Qualifikation: - isCanonical: Y Drain-Source-Spannung Vds, p-Kanal: 20V Dauer-Drainstrom Id, n-Kanal: 800mA Drain-Source-Durchgangswiderstand, p-Kanal: 0.3ohm Verlustleistung, p-Kanal: 150mW Drain-Source-Spannung Vds, n-Kanal: 20V SVHC: To Be Advised Bauform - Transistor: SOT-563 Anzahl der Pins: 6Pin(s) Produktpalette: - Drain-Source-Durchgangswiderstand, n-Kanal: 0.24ohm productTraceability: Yes-Date/Lot Code usEccn: EAR99 Kanaltyp: n- und p-Kanal Verlustleistung, n-Kanal: 150mW Betriebstemperatur, max.: 150°C |
auf Bestellung 2950 Stücke: Lieferzeit 14-21 Tag (e) |
Mindestbestellmenge: 5 Stücke Im Einkaufswagen Stück im Wert von UAH |
| SSM6L14FE(TE85L,F) |
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Hersteller: Toshiba Semiconductor and Storage
Description: MOSFET N/P-CH 20V 0.8A ES6
Packaging: Cut Tape (CT)
Package / Case: SOT-563, SOT-666
Mounting Type: Surface Mount
Configuration: N and P-Channel
Operating Temperature: 150°C
Technology: MOSFET (Metal Oxide)
Power - Max: 150mW (Ta)
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 800mA (Ta), 720mA (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 90pF @ 10V, 110pF @ 10V
Rds On (Max) @ Id, Vgs: 240mOhm @ 500mA, 4.5V, 300mOhm @ 400mA, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 2nC @ 4.5V, 1.76nC @ 4.5V
FET Feature: Logic Level Gate, 1.5V Drive
Vgs(th) (Max) @ Id: 1V @ 1mA
Supplier Device Package: ES6
Description: MOSFET N/P-CH 20V 0.8A ES6
Packaging: Cut Tape (CT)
Package / Case: SOT-563, SOT-666
Mounting Type: Surface Mount
Configuration: N and P-Channel
Operating Temperature: 150°C
Technology: MOSFET (Metal Oxide)
Power - Max: 150mW (Ta)
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 800mA (Ta), 720mA (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 90pF @ 10V, 110pF @ 10V
Rds On (Max) @ Id, Vgs: 240mOhm @ 500mA, 4.5V, 300mOhm @ 400mA, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 2nC @ 4.5V, 1.76nC @ 4.5V
FET Feature: Logic Level Gate, 1.5V Drive
Vgs(th) (Max) @ Id: 1V @ 1mA
Supplier Device Package: ES6
auf Bestellung 26440 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 24+ | 0.88 EUR |
| 40+ | 0.54 EUR |
| 100+ | 0.35 EUR |
| 500+ | 0.25 EUR |
| 1000+ | 0.19 EUR |
| SSM6L14FE(TE85L,F) |
|
Hersteller: Toshiba
MOSFETs LowON Res MOSFET ID=0.8A VDSS=20V
MOSFETs LowON Res MOSFET ID=0.8A VDSS=20V
auf Bestellung 247587 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 4+ | 0.9 EUR |
| 10+ | 0.55 EUR |
| 100+ | 0.35 EUR |
| 500+ | 0.26 EUR |
| 1000+ | 0.24 EUR |
| 2000+ | 0.21 EUR |
| 4000+ | 0.17 EUR |
| SSM6L14FE(TE85L,F) |
|
Hersteller: TOSHIBA
Description: TOSHIBA - SSM6L14FE(TE85L,F) - Dual-MOSFET, n- und p-Kanal, 20 V, 20 V, 800 mA, 720 mA, 0.24 ohm
tariffCode: 85412900
euEccn: NLR
rohsCompliant: YES
Dauer-Drainstrom Id, p-Kanal: 720mA
hazardous: false
rohsPhthalatesCompliant: YES
Qualifikation: -
isCanonical: Y
Drain-Source-Spannung Vds, p-Kanal: 20V
Dauer-Drainstrom Id, n-Kanal: 800mA
Drain-Source-Durchgangswiderstand, p-Kanal: 0.3ohm
Verlustleistung, p-Kanal: 150mW
Drain-Source-Spannung Vds, n-Kanal: 20V
SVHC: To Be Advised
Bauform - Transistor: SOT-563
Anzahl der Pins: 6Pin(s)
Produktpalette: -
Drain-Source-Durchgangswiderstand, n-Kanal: 0.24ohm
productTraceability: Yes-Date/Lot Code
usEccn: EAR99
Kanaltyp: n- und p-Kanal
Verlustleistung, n-Kanal: 150mW
Betriebstemperatur, max.: 150°C
Description: TOSHIBA - SSM6L14FE(TE85L,F) - Dual-MOSFET, n- und p-Kanal, 20 V, 20 V, 800 mA, 720 mA, 0.24 ohm
tariffCode: 85412900
euEccn: NLR
rohsCompliant: YES
Dauer-Drainstrom Id, p-Kanal: 720mA
hazardous: false
rohsPhthalatesCompliant: YES
Qualifikation: -
isCanonical: Y
Drain-Source-Spannung Vds, p-Kanal: 20V
Dauer-Drainstrom Id, n-Kanal: 800mA
Drain-Source-Durchgangswiderstand, p-Kanal: 0.3ohm
Verlustleistung, p-Kanal: 150mW
Drain-Source-Spannung Vds, n-Kanal: 20V
SVHC: To Be Advised
Bauform - Transistor: SOT-563
Anzahl der Pins: 6Pin(s)
Produktpalette: -
Drain-Source-Durchgangswiderstand, n-Kanal: 0.24ohm
productTraceability: Yes-Date/Lot Code
usEccn: EAR99
Kanaltyp: n- und p-Kanal
Verlustleistung, n-Kanal: 150mW
Betriebstemperatur, max.: 150°C
auf Bestellung 2950 Stücke:
Lieferzeit 14-21 Tag (e)