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SSM6L14FE(TE85L,F)

SSM6L14FE(TE85L,F) Toshiba Semiconductor and Storage

SSM6L14FE_datasheet_en_20140301.pdf?did=2366&prodName=SSM6L14FE Hersteller: Toshiba Semiconductor and Storage
Description: MOSFET N/P-CH 20V 0.8A ES6
Packaging: Tape & Reel (TR)
Package / Case: SOT-563, SOT-666
Mounting Type: Surface Mount
Configuration: N and P-Channel
Operating Temperature: 150°C
Technology: MOSFET (Metal Oxide)
Power - Max: 150mW (Ta)
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 800mA (Ta), 720mA (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 90pF @ 10V, 110pF @ 10V
Rds On (Max) @ Id, Vgs: 240mOhm @ 500mA, 4.5V, 300mOhm @ 400mA, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 2nC @ 4.5V, 1.76nC @ 4.5V
FET Feature: Logic Level Gate, 1.5V Drive
Vgs(th) (Max) @ Id: 1V @ 1mA
Supplier Device Package: ES6
auf Bestellung 80000 Stücke:
Lieferzeit 21-28 Tag (e)
Anzahl Preis ohne MwSt
4000+0.24 EUR
12000+ 0.21 EUR
Mindestbestellmenge: 4000
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Technische Details SSM6L14FE(TE85L,F) Toshiba Semiconductor and Storage

Description: MOSFET N/P-CH 20V 0.8A ES6, Packaging: Tape & Reel (TR), Package / Case: SOT-563, SOT-666, Mounting Type: Surface Mount, Configuration: N and P-Channel, Operating Temperature: 150°C, Technology: MOSFET (Metal Oxide), Power - Max: 150mW (Ta), Drain to Source Voltage (Vdss): 20V, Current - Continuous Drain (Id) @ 25°C: 800mA (Ta), 720mA (Ta), Input Capacitance (Ciss) (Max) @ Vds: 90pF @ 10V, 110pF @ 10V, Rds On (Max) @ Id, Vgs: 240mOhm @ 500mA, 4.5V, 300mOhm @ 400mA, 4.5V, Gate Charge (Qg) (Max) @ Vgs: 2nC @ 4.5V, 1.76nC @ 4.5V, FET Feature: Logic Level Gate, 1.5V Drive, Vgs(th) (Max) @ Id: 1V @ 1mA, Supplier Device Package: ES6.

Weitere Produktangebote SSM6L14FE(TE85L,F) nach Preis ab 0.19 EUR bis 1.12 EUR

Foto Bezeichnung Hersteller Beschreibung Verfügbarkeit
Preis ohne MwSt
SSM6L14FE(TE85L,F) SSM6L14FE(TE85L,F) Hersteller : Toshiba SSM6L14FE_datasheet_en_20140301-1316108.pdf MOSFET LowON Res MOSFET ID=0.8A VDSS=20V
auf Bestellung 571739 Stücke:
Lieferzeit 14-28 Tag (e)
Anzahl Preis ohne MwSt
48+1.09 EUR
68+ 0.77 EUR
151+ 0.35 EUR
1000+ 0.24 EUR
8000+ 0.21 EUR
24000+ 0.19 EUR
Mindestbestellmenge: 48
SSM6L14FE(TE85L,F) SSM6L14FE(TE85L,F) Hersteller : Toshiba Semiconductor and Storage SSM6L14FE_datasheet_en_20140301.pdf?did=2366&prodName=SSM6L14FE Description: MOSFET N/P-CH 20V 0.8A ES6
Packaging: Cut Tape (CT)
Package / Case: SOT-563, SOT-666
Mounting Type: Surface Mount
Configuration: N and P-Channel
Operating Temperature: 150°C
Technology: MOSFET (Metal Oxide)
Power - Max: 150mW (Ta)
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 800mA (Ta), 720mA (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 90pF @ 10V, 110pF @ 10V
Rds On (Max) @ Id, Vgs: 240mOhm @ 500mA, 4.5V, 300mOhm @ 400mA, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 2nC @ 4.5V, 1.76nC @ 4.5V
FET Feature: Logic Level Gate, 1.5V Drive
Vgs(th) (Max) @ Id: 1V @ 1mA
Supplier Device Package: ES6
auf Bestellung 81563 Stücke:
Lieferzeit 21-28 Tag (e)
Anzahl Preis ohne MwSt
24+1.12 EUR
34+ 0.79 EUR
100+ 0.4 EUR
500+ 0.35 EUR
1000+ 0.27 EUR
2000+ 0.24 EUR
Mindestbestellmenge: 24
SSM6L14FE(TE85L,F) SSM6L14FE(TE85L,F) Hersteller : Toshiba 127docget.jsptypedatasheetlangenpidssm6l14fe.jsptypedatasheetlangenp.pdf Trans MOSFET N/P-CH Si 20V 0.8A/0.72A 6-Pin ES T/R
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