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SSM6L39TU,LF

SSM6L39TU,LF Toshiba


SSM6L39TU_datasheet_en_20140301-1916216.pdf Hersteller: Toshiba
MOSFETs Small Signal MOSFET
auf Bestellung 13855 Stücke:

Lieferzeit 10-14 Tag (e)
Anzahl Preis
4+0.74 EUR
10+0.58 EUR
100+0.32 EUR
1000+0.22 EUR
3000+0.18 EUR
9000+0.17 EUR
Mindestbestellmenge: 4
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Technische Details SSM6L39TU,LF Toshiba

Description: MOSFET N/P-CH 20V 0.8A UF6, Packaging: Tape & Reel (TR), Package / Case: 6-SMD, Flat Leads, Mounting Type: Surface Mount, Configuration: N and P-Channel, Operating Temperature: 150°C (TJ), Technology: MOSFET (Metal Oxide), Power - Max: 500mW, Drain to Source Voltage (Vdss): 20V, Current - Continuous Drain (Id) @ 25°C: 800mA, Input Capacitance (Ciss) (Max) @ Vds: 268pF @ 10V, Rds On (Max) @ Id, Vgs: 143mOhm @ 600MA, 4V, FET Feature: Logic Level Gate, 1.8V Drive, Vgs(th) (Max) @ Id: 1V @ 1mA, Supplier Device Package: UF6, Part Status: Active.

Weitere Produktangebote SSM6L39TU,LF nach Preis ab 0.26 EUR bis 0.95 EUR

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SSM6L39TU,LF SSM6L39TU,LF Hersteller : Toshiba Semiconductor and Storage docget.jsp?did=11583&prodName=SSM6L39TU Description: MOSFET N/P-CH 20V 0.8A UF6
Packaging: Cut Tape (CT)
Package / Case: 6-SMD, Flat Leads
Mounting Type: Surface Mount
Configuration: N and P-Channel
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 500mW
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 800mA
Input Capacitance (Ciss) (Max) @ Vds: 268pF @ 10V
Rds On (Max) @ Id, Vgs: 143mOhm @ 600MA, 4V
FET Feature: Logic Level Gate, 1.8V Drive
Vgs(th) (Max) @ Id: 1V @ 1mA
Supplier Device Package: UF6
Part Status: Active
auf Bestellung 1661 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
19+0.95 EUR
30+0.59 EUR
100+0.38 EUR
500+0.29 EUR
1000+0.26 EUR
Mindestbestellmenge: 19
Im Einkaufswagen  Stück im Wert von  UAH
SSM6L39TU,LF SSM6L39TU,LF Hersteller : Toshiba Semiconductor and Storage docget.jsp?did=11583&prodName=SSM6L39TU Description: MOSFET N/P-CH 20V 0.8A UF6
Packaging: Tape & Reel (TR)
Package / Case: 6-SMD, Flat Leads
Mounting Type: Surface Mount
Configuration: N and P-Channel
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 500mW
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 800mA
Input Capacitance (Ciss) (Max) @ Vds: 268pF @ 10V
Rds On (Max) @ Id, Vgs: 143mOhm @ 600MA, 4V
FET Feature: Logic Level Gate, 1.8V Drive
Vgs(th) (Max) @ Id: 1V @ 1mA
Supplier Device Package: UF6
Part Status: Active
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Im Einkaufswagen  Stück im Wert von  UAH