| Anzahl | Privatkunde |
|---|---|
| 4+ | 1.09 EUR |
| 10+ | 0.68 EUR |
| 100+ | 0.43 EUR |
| 500+ | 0.33 EUR |
| 1000+ | 0.29 EUR |
| 3000+ | 0.23 EUR |
| 6000+ | 0.21 EUR |
Produktrezensionen
Produktbewertung abgeben
Technische Details SSM6L39TU,LF Toshiba
Description: MOSFET N/P-CH 20V 0.8A UF6, Part Status: Active, Supplier Device Package: UF6, Vgs(th) (Max) @ Id: 1V @ 1mA, FET Feature: Logic Level Gate, 1.8V Drive, Rds On (Max) @ Id, Vgs: 143mOhm @ 600MA, 4V, Input Capacitance (Ciss) (Max) @ Vds: 268pF @ 10V, Current - Continuous Drain (Id) @ 25°C: 800mA, Drain to Source Voltage (Vdss): 20V, Power - Max: 500mW, Technology: MOSFET (Metal Oxide), Operating Temperature: 150°C (TJ), Configuration: N and P-Channel, Mounting Type: Surface Mount, Package / Case: 6-SMD, Flat Leads, Packaging: Tape & Reel (TR).
Weitere Produktangebote SSM6L39TU,LF nach Preis ab 0.31 EUR bis 1.13 EUR
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Privatkunde | ||||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
 |
SSM6L39TU,LF | Toshiba Semiconductor and Storage |
 Description: MOSFET N/P-CH 20V 0.8A UF6Part Status: Active Supplier Device Package: UF6 Vgs(th) (Max) @ Id: 1V @ 1mA FET Feature: Logic Level Gate, 1.8V Drive Rds On (Max) @ Id, Vgs: 143mOhm @ 600MA, 4V Input Capacitance (Ciss) (Max) @ Vds: 268pF @ 10V Current - Continuous Drain (Id) @ 25°C: 800mA Drain to Source Voltage (Vdss): 20V Power - Max: 500mW Technology: MOSFET (Metal Oxide) Operating Temperature: 150°C (TJ) Configuration: N and P-Channel Mounting Type: Surface Mount Package / Case: 6-SMD, Flat Leads Packaging: Cut Tape (CT) |
auf Bestellung 1661 Stücke: Lieferzeit 10-14 Tag (e) |
|
| SSM6L39TU,LF |
|
Hersteller: Toshiba Semiconductor and Storage
Description: MOSFET N/P-CH 20V 0.8A UF6
Part Status: Active
Supplier Device Package: UF6
Vgs(th) (Max) @ Id: 1V @ 1mA
FET Feature: Logic Level Gate, 1.8V Drive
Rds On (Max) @ Id, Vgs: 143mOhm @ 600MA, 4V
Input Capacitance (Ciss) (Max) @ Vds: 268pF @ 10V
Current - Continuous Drain (Id) @ 25°C: 800mA
Drain to Source Voltage (Vdss): 20V
Power - Max: 500mW
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Configuration: N and P-Channel
Mounting Type: Surface Mount
Package / Case: 6-SMD, Flat Leads
Packaging: Cut Tape (CT)
Description: MOSFET N/P-CH 20V 0.8A UF6
Part Status: Active
Supplier Device Package: UF6
Vgs(th) (Max) @ Id: 1V @ 1mA
FET Feature: Logic Level Gate, 1.8V Drive
Rds On (Max) @ Id, Vgs: 143mOhm @ 600MA, 4V
Input Capacitance (Ciss) (Max) @ Vds: 268pF @ 10V
Current - Continuous Drain (Id) @ 25°C: 800mA
Drain to Source Voltage (Vdss): 20V
Power - Max: 500mW
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Configuration: N and P-Channel
Mounting Type: Surface Mount
Package / Case: 6-SMD, Flat Leads
Packaging: Cut Tape (CT)
auf Bestellung 1661 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 19+ | 1.13 EUR |
| 30+ | 0.7 EUR |
| 100+ | 0.45 EUR |
| 500+ | 0.35 EUR |
| 1000+ | 0.31 EUR |