SSM6L56FE,LM Toshiba Semiconductor and Storage
Hersteller: Toshiba Semiconductor and StorageDescription: MOSFET N/P-CH 20V 0.8A ES6
Packaging: Tape & Reel (TR)
Package / Case: SOT-563, SOT-666
Mounting Type: Surface Mount
Configuration: N and P-Channel
Operating Temperature: 150°C
Technology: MOSFET (Metal Oxide)
Power - Max: 150mW (Ta)
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 800mA (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 55pF @ 10V, 100pF @ 10V
Rds On (Max) @ Id, Vgs: 235mOhm @ 800mA, 4.5V, 390mOhm @ 800mA, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 1nC @ 10V
FET Feature: Logic Level Gate, 1.5V Drive
Vgs(th) (Max) @ Id: 1V @ 1mA
Supplier Device Package: ES6
auf Bestellung 72000 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 4000+ | 0.07 EUR |
| 8000+ | 0.07 EUR |
| 12000+ | 0.06 EUR |
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Technische Details SSM6L56FE,LM Toshiba Semiconductor and Storage
Description: MOSFET N/P-CH 20V 0.8A ES6, Packaging: Tape & Reel (TR), Package / Case: SOT-563, SOT-666, Mounting Type: Surface Mount, Configuration: N and P-Channel, Operating Temperature: 150°C, Technology: MOSFET (Metal Oxide), Power - Max: 150mW (Ta), Drain to Source Voltage (Vdss): 20V, Current - Continuous Drain (Id) @ 25°C: 800mA (Ta), Input Capacitance (Ciss) (Max) @ Vds: 55pF @ 10V, 100pF @ 10V, Rds On (Max) @ Id, Vgs: 235mOhm @ 800mA, 4.5V, 390mOhm @ 800mA, 4.5V, Gate Charge (Qg) (Max) @ Vgs: 1nC @ 10V, FET Feature: Logic Level Gate, 1.5V Drive, Vgs(th) (Max) @ Id: 1V @ 1mA, Supplier Device Package: ES6.
Weitere Produktangebote SSM6L56FE,LM nach Preis ab 0.07 EUR bis 1.28 EUR
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SSM6L56FE,LM | Hersteller : Toshiba |
MOSFETs Small-signal MOSFET 2 in 1 Nch + Pch Vdss: 20V Id: 800mA Pd: 0.15W |
auf Bestellung 11118 Stücke: Lieferzeit 10-14 Tag (e) |
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SSM6L56FE,LM | Hersteller : Toshiba Semiconductor and Storage |
Description: MOSFET N/P-CH 20V 0.8A ES6 Packaging: Cut Tape (CT) Package / Case: SOT-563, SOT-666 Mounting Type: Surface Mount Configuration: N and P-Channel Operating Temperature: 150°C Technology: MOSFET (Metal Oxide) Power - Max: 150mW (Ta) Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 800mA (Ta) Input Capacitance (Ciss) (Max) @ Vds: 55pF @ 10V, 100pF @ 10V Rds On (Max) @ Id, Vgs: 235mOhm @ 800mA, 4.5V, 390mOhm @ 800mA, 4.5V Gate Charge (Qg) (Max) @ Vgs: 1nC @ 10V FET Feature: Logic Level Gate, 1.5V Drive Vgs(th) (Max) @ Id: 1V @ 1mA Supplier Device Package: ES6 |
auf Bestellung 72225 Stücke: Lieferzeit 10-14 Tag (e) |
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| SSM6L56FE,LM | Hersteller : Toshiba |
Транз. Пол. ММ N&P MOSFET ES-6 Udss=(20; -20)V; Id=(0,8; -0,8)A; Pdmax=1/4W; Rds=(0,235; 0,39) Ohm |
auf Bestellung 60 Stücke: Lieferzeit 14-21 Tag (e) |
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SSM6L56FE,LM | Hersteller : Toshiba |
Trans MOSFET N/P-CH Si 20V 0.8A 6-Pin ES T/R |
Produkt ist nicht verfügbar |
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SSM6L56FE,LM | Hersteller : Toshiba |
Trans MOSFET N/P-CH Si 20V 0.8A 6-Pin ES T/R |
Produkt ist nicht verfügbar |
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SSM6L56FE,LM | Hersteller : Toshiba |
Trans MOSFET N/P-CH Si 20V 0.8A 6-Pin ES T/R |
Produkt ist nicht verfügbar |