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SSM6L56FE,LM

SSM6L56FE,LM Toshiba Semiconductor and Storage

SSM6L56FE_datasheet_en_20190801.pdf?did=66256&prodName=SSM6L56FE Hersteller: Toshiba Semiconductor and Storage
Description: MOSFET N/P-CH 20V 0.8A ES6
Packaging: Cut Tape (CT)
Package / Case: SOT-563, SOT-666
Mounting Type: Surface Mount
Configuration: N and P-Channel
Operating Temperature: 150°C
Technology: MOSFET (Metal Oxide)
Power - Max: 150mW (Ta)
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 800mA (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 55pF @ 10V, 100pF @ 10V
Rds On (Max) @ Id, Vgs: 235mOhm @ 800mA, 4.5V, 390mOhm @ 800mA, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 1nC @ 10V
FET Feature: Logic Level Gate, 1.5V Drive
Vgs(th) (Max) @ Id: 1V @ 1mA
Supplier Device Package: ES6
auf Bestellung 1101 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
31+0.58 EUR
44+ 0.41 EUR
100+ 0.21 EUR
500+ 0.17 EUR
1000+ 0.12 EUR
Mindestbestellmenge: 31
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Technische Details SSM6L56FE,LM Toshiba Semiconductor and Storage

Description: MOSFET N/P-CH 20V 0.8A ES6, Packaging: Tape & Reel (TR), Package / Case: SOT-563, SOT-666, Mounting Type: Surface Mount, Configuration: N and P-Channel, Operating Temperature: 150°C, Technology: MOSFET (Metal Oxide), Power - Max: 150mW (Ta), Drain to Source Voltage (Vdss): 20V, Current - Continuous Drain (Id) @ 25°C: 800mA (Ta), Input Capacitance (Ciss) (Max) @ Vds: 55pF @ 10V, 100pF @ 10V, Rds On (Max) @ Id, Vgs: 235mOhm @ 800mA, 4.5V, 390mOhm @ 800mA, 4.5V, Gate Charge (Qg) (Max) @ Vgs: 1nC @ 10V, FET Feature: Logic Level Gate, 1.5V Drive, Vgs(th) (Max) @ Id: 1V @ 1mA, Supplier Device Package: ES6.

Weitere Produktangebote SSM6L56FE,LM nach Preis ab 0.072 EUR bis 1.34 EUR

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SSM6L56FE,LM SSM6L56FE,LM Hersteller : Toshiba SSM6L56FE_datasheet_en_20190801-1901888.pdf MOSFET Small-signal MOSFET 2 in 1 Nch + Pch Vdss: 20V Id: 800mA Pd: 0.15W
auf Bestellung 42813 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
5+0.59 EUR
10+ 0.41 EUR
100+ 0.17 EUR
1000+ 0.11 EUR
8000+ 0.086 EUR
24000+ 0.081 EUR
48000+ 0.072 EUR
Mindestbestellmenge: 5
SSM6L56FE,LM Hersteller : Toshiba SSM6L56FE_datasheet_en_20190801.pdf?did=66256&prodName=SSM6L56FE Транз. Пол. ММ N&P MOSFET ES-6 Udss=(20; -20)V; Id=(0,8; -0,8)A; Pdmax=1/4W; Rds=(0,235; 0,39) Ohm
auf Bestellung 60 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis ohne MwSt
1+1.34 EUR
10+ 1.04 EUR
SSM6L56FE,LM SSM6L56FE,LM Hersteller : Toshiba ssm6l56fe_datasheet_en_20190801.pdf Trans MOSFET N/P-CH Si 20V 0.8A 6-Pin ES T/R
Produkt ist nicht verfügbar
SSM6L56FE,LM SSM6L56FE,LM Hersteller : Toshiba Semiconductor and Storage SSM6L56FE_datasheet_en_20190801.pdf?did=66256&prodName=SSM6L56FE Description: MOSFET N/P-CH 20V 0.8A ES6
Packaging: Tape & Reel (TR)
Package / Case: SOT-563, SOT-666
Mounting Type: Surface Mount
Configuration: N and P-Channel
Operating Temperature: 150°C
Technology: MOSFET (Metal Oxide)
Power - Max: 150mW (Ta)
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 800mA (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 55pF @ 10V, 100pF @ 10V
Rds On (Max) @ Id, Vgs: 235mOhm @ 800mA, 4.5V, 390mOhm @ 800mA, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 1nC @ 10V
FET Feature: Logic Level Gate, 1.5V Drive
Vgs(th) (Max) @ Id: 1V @ 1mA
Supplier Device Package: ES6
Produkt ist nicht verfügbar