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SSM6L807R,LF Toshiba

Name: SSM6L807R,LF
Brand: Toshiba
SKU: 9250708-4
Price: 3.69 EUR
Availability: InStock

859D24F4235D7FFCB6C9FD8725D9A3C422757460C9A6C05EC3FC05334B4FFBCE.pdf

Hersteller: Toshiba
MOSFETs MOSFET, N/P-CH, 30V, 4A, TSOP-F

auf Bestellung 11936 Stücke:

Lieferzeit 10-14 Tag (e)

Anzahl	Preis
3+	1.23 EUR
10+	0.76 EUR
100+	0.49 EUR
500+	0.39 EUR
1000+	0.34 EUR
2500+	0.3 EUR
5000+	0.27 EUR

Mindestbestellmenge: 3

Im Einkaufswagen Stück im Wert von UAH

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Technische Details SSM6L807R,LF Toshiba

Description: MOSFET N/P-CH 30V 4A 6TSOPF, Packaging: Tape & Reel (TR), Package / Case: 6-SMD, Flat Leads, Mounting Type: Surface Mount, Configuration: N and P-Channel, Operating Temperature: 150°C, Technology: MOSFET (Metal Oxide), Power - Max: 1.4W (Ta), Drain to Source Voltage (Vdss): 30V, Current - Continuous Drain (Id) @ 25°C: 4A (Ta), Input Capacitance (Ciss) (Max) @ Vds: 310pF @ 15V, 480pF @ 10V, Rds On (Max) @ Id, Vgs: 39.1mOhm @ 2A, 4.5V, Gate Charge (Qg) (Max) @ Vgs: 3.2nC @ 4.5V, 6.74nC @ 4.5V, Vgs(th) (Max) @ Id: 1V @ 1mA, Supplier Device Package: 6-TSOP-F.

Weitere Produktangebote SSM6L807R,LF

Foto	Bezeichnung	Hersteller	Beschreibung	Verfügbarkeit	Preis
	SSM6L807R,LF	Hersteller : Toshiba Semiconductor and Storage	Description: MOSFET N/P-CH 30V 4A 6TSOPF Packaging: Tape & Reel (TR) Package / Case: 6-SMD, Flat Leads Mounting Type: Surface Mount Configuration: N and P-Channel Operating Temperature: 150°C Technology: MOSFET (Metal Oxide) Power - Max: 1.4W (Ta) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 4A (Ta) Input Capacitance (Ciss) (Max) @ Vds: 310pF @ 15V, 480pF @ 10V Rds On (Max) @ Id, Vgs: 39.1mOhm @ 2A, 4.5V Gate Charge (Qg) (Max) @ Vgs: 3.2nC @ 4.5V, 6.74nC @ 4.5V Vgs(th) (Max) @ Id: 1V @ 1mA Supplier Device Package: 6-TSOP-F	Produkt ist nicht verfügbar	Im Einkaufswagen Stück im Wert von UAH
	SSM6L807R,LF	Hersteller : Toshiba Semiconductor and Storage	Description: MOSFET N/P-CH 30V 4A 6TSOPF Packaging: Cut Tape (CT) Package / Case: 6-SMD, Flat Leads Mounting Type: Surface Mount Configuration: N and P-Channel Operating Temperature: 150°C Technology: MOSFET (Metal Oxide) Power - Max: 1.4W (Ta) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 4A (Ta) Input Capacitance (Ciss) (Max) @ Vds: 310pF @ 15V, 480pF @ 10V Rds On (Max) @ Id, Vgs: 39.1mOhm @ 2A, 4.5V Gate Charge (Qg) (Max) @ Vgs: 3.2nC @ 4.5V, 6.74nC @ 4.5V Vgs(th) (Max) @ Id: 1V @ 1mA Supplier Device Package: 6-TSOP-F	Produkt ist nicht verfügbar	Im Einkaufswagen Stück im Wert von UAH