Technische Details SSM6L820R,LF Toshiba
Description: MOSFET N/P-CH 30V/20V 4A 6TSOPF, Packaging: Tape & Reel (TR), Package / Case: 6-SMD, Flat Leads, Mounting Type: Surface Mount, Configuration: N and P-Channel, Operating Temperature: 150°C, Technology: MOSFET (Metal Oxide), Power - Max: 1.4W (Ta), Drain to Source Voltage (Vdss): 30V, 20V, Current - Continuous Drain (Id) @ 25°C: 4A (Ta), Input Capacitance (Ciss) (Max) @ Vds: 310pF @ 15V, 480pF @ 10V, Rds On (Max) @ Id, Vgs: 39.1mOhm @ 2A, 4.5V, 45mOhm @ 3.5A, 10V, Gate Charge (Qg) (Max) @ Vgs: 3.2nC @ 4.5V, 6.7nC @ 4.5V, Vgs(th) (Max) @ Id: 1V @ 1mA, 1.2V @ 1mA, Supplier Device Package: 6-TSOP-F, Part Status: Active.
Weitere Produktangebote SSM6L820R,LF nach Preis ab 0.19 EUR bis 1.43 EUR
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SSM6L820R,LF | Toshiba |
 Trans MOSFET N/P-CH Si 30V/20V 4A 6-Pin TSOP-F T/R Automotive AEC-Q101 |
auf Bestellung 1523 Stücke: Lieferzeit 14-21 Tag (e) |
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SSM6L820R,LF | Toshiba Semiconductor and Storage |
Description: MOSFET N/P-CH 30V/20V 4A 6TSOPF Packaging: Tape & Reel (TR) Package / Case: 6-SMD, Flat Leads Mounting Type: Surface Mount Configuration: N and P-Channel Operating Temperature: 150°C Technology: MOSFET (Metal Oxide) Power - Max: 1.4W (Ta) Drain to Source Voltage (Vdss): 30V, 20V Current - Continuous Drain (Id) @ 25°C: 4A (Ta) Input Capacitance (Ciss) (Max) @ Vds: 310pF @ 15V, 480pF @ 10V Rds On (Max) @ Id, Vgs: 39.1mOhm @ 2A, 4.5V, 45mOhm @ 3.5A, 10V Gate Charge (Qg) (Max) @ Vgs: 3.2nC @ 4.5V, 6.7nC @ 4.5V Vgs(th) (Max) @ Id: 1V @ 1mA, 1.2V @ 1mA Supplier Device Package: 6-TSOP-F Part Status: Active |
auf Bestellung 3000 Stücke: Lieferzeit 10-14 Tag (e) |
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SSM6L820R,LF | Toshiba |
MOSFETs Small Signal MOSFET N-ch+P-ch VDSS=30V, VGSS=-8/+12V, RDS(@4.5V)=0.0391O, ID=4A |
auf Bestellung 2112 Stücke: Lieferzeit 10-14 Tag (e) |
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SSM6L820R,LF | Toshiba Semiconductor and Storage |
Description: MOSFET N/P-CH 30V/20V 4A 6TSOPF Packaging: Cut Tape (CT) Package / Case: 6-SMD, Flat Leads Mounting Type: Surface Mount Configuration: N and P-Channel Operating Temperature: 150°C Technology: MOSFET (Metal Oxide) Power - Max: 1.4W (Ta) Drain to Source Voltage (Vdss): 30V, 20V Current - Continuous Drain (Id) @ 25°C: 4A (Ta) Input Capacitance (Ciss) (Max) @ Vds: 310pF @ 15V, 480pF @ 10V Rds On (Max) @ Id, Vgs: 39.1mOhm @ 2A, 4.5V, 45mOhm @ 3.5A, 10V Gate Charge (Qg) (Max) @ Vgs: 3.2nC @ 4.5V, 6.7nC @ 4.5V Vgs(th) (Max) @ Id: 1V @ 1mA, 1.2V @ 1mA Supplier Device Package: 6-TSOP-F Part Status: Active |
auf Bestellung 5818 Stücke: Lieferzeit 10-14 Tag (e) |
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Hersteller: Toshiba
Trans MOSFET N/P-CH Si 30V/20V 4A 6-Pin TSOP-F T/R Automotive AEC-Q101
Trans MOSFET N/P-CH Si 30V/20V 4A 6-Pin TSOP-F T/R Automotive AEC-Q101
auf Bestellung 1523 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 936+ | 0.19 EUR |
| SSM6L820R,LF |
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Hersteller: Toshiba Semiconductor and Storage
Description: MOSFET N/P-CH 30V/20V 4A 6TSOPF
Packaging: Tape & Reel (TR)
Package / Case: 6-SMD, Flat Leads
Mounting Type: Surface Mount
Configuration: N and P-Channel
Operating Temperature: 150°C
Technology: MOSFET (Metal Oxide)
Power - Max: 1.4W (Ta)
Drain to Source Voltage (Vdss): 30V, 20V
Current - Continuous Drain (Id) @ 25°C: 4A (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 310pF @ 15V, 480pF @ 10V
Rds On (Max) @ Id, Vgs: 39.1mOhm @ 2A, 4.5V, 45mOhm @ 3.5A, 10V
Gate Charge (Qg) (Max) @ Vgs: 3.2nC @ 4.5V, 6.7nC @ 4.5V
Vgs(th) (Max) @ Id: 1V @ 1mA, 1.2V @ 1mA
Supplier Device Package: 6-TSOP-F
Part Status: Active
Description: MOSFET N/P-CH 30V/20V 4A 6TSOPF
Packaging: Tape & Reel (TR)
Package / Case: 6-SMD, Flat Leads
Mounting Type: Surface Mount
Configuration: N and P-Channel
Operating Temperature: 150°C
Technology: MOSFET (Metal Oxide)
Power - Max: 1.4W (Ta)
Drain to Source Voltage (Vdss): 30V, 20V
Current - Continuous Drain (Id) @ 25°C: 4A (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 310pF @ 15V, 480pF @ 10V
Rds On (Max) @ Id, Vgs: 39.1mOhm @ 2A, 4.5V, 45mOhm @ 3.5A, 10V
Gate Charge (Qg) (Max) @ Vgs: 3.2nC @ 4.5V, 6.7nC @ 4.5V
Vgs(th) (Max) @ Id: 1V @ 1mA, 1.2V @ 1mA
Supplier Device Package: 6-TSOP-F
Part Status: Active
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 3000+ | 0.32 EUR |
| SSM6L820R,LF |
|
Hersteller: Toshiba
MOSFETs Small Signal MOSFET N-ch+P-ch VDSS=30V, VGSS=-8/+12V, RDS(@4.5V)=0.0391O, ID=4A
MOSFETs Small Signal MOSFET N-ch+P-ch VDSS=30V, VGSS=-8/+12V, RDS(@4.5V)=0.0391O, ID=4A
auf Bestellung 2112 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 3+ | 1.43 EUR |
| 10+ | 0.88 EUR |
| 100+ | 0.57 EUR |
| 500+ | 0.42 EUR |
| 1000+ | 0.37 EUR |
| 3000+ | 0.32 EUR |
| 6000+ | 0.3 EUR |
| SSM6L820R,LF |
|
Hersteller: Toshiba Semiconductor and Storage
Description: MOSFET N/P-CH 30V/20V 4A 6TSOPF
Packaging: Cut Tape (CT)
Package / Case: 6-SMD, Flat Leads
Mounting Type: Surface Mount
Configuration: N and P-Channel
Operating Temperature: 150°C
Technology: MOSFET (Metal Oxide)
Power - Max: 1.4W (Ta)
Drain to Source Voltage (Vdss): 30V, 20V
Current - Continuous Drain (Id) @ 25°C: 4A (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 310pF @ 15V, 480pF @ 10V
Rds On (Max) @ Id, Vgs: 39.1mOhm @ 2A, 4.5V, 45mOhm @ 3.5A, 10V
Gate Charge (Qg) (Max) @ Vgs: 3.2nC @ 4.5V, 6.7nC @ 4.5V
Vgs(th) (Max) @ Id: 1V @ 1mA, 1.2V @ 1mA
Supplier Device Package: 6-TSOP-F
Part Status: Active
Description: MOSFET N/P-CH 30V/20V 4A 6TSOPF
Packaging: Cut Tape (CT)
Package / Case: 6-SMD, Flat Leads
Mounting Type: Surface Mount
Configuration: N and P-Channel
Operating Temperature: 150°C
Technology: MOSFET (Metal Oxide)
Power - Max: 1.4W (Ta)
Drain to Source Voltage (Vdss): 30V, 20V
Current - Continuous Drain (Id) @ 25°C: 4A (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 310pF @ 15V, 480pF @ 10V
Rds On (Max) @ Id, Vgs: 39.1mOhm @ 2A, 4.5V, 45mOhm @ 3.5A, 10V
Gate Charge (Qg) (Max) @ Vgs: 3.2nC @ 4.5V, 6.7nC @ 4.5V
Vgs(th) (Max) @ Id: 1V @ 1mA, 1.2V @ 1mA
Supplier Device Package: 6-TSOP-F
Part Status: Active
auf Bestellung 5818 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 15+ | 1.43 EUR |
| 24+ | 0.88 EUR |
| 100+ | 0.57 EUR |
| 500+ | 0.43 EUR |
| 1000+ | 0.39 EUR |