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SSM6L820R,LF

SSM6L820R,LF Toshiba Semiconductor and Storage

SSM6L820R_datasheet_en_20210603.pdf?did=63678&prodName=SSM6L820R Hersteller: Toshiba Semiconductor and Storage
Description: SMALL SIGNAL MOSFET N-CH+P-CH VD
Packaging: Tape & Reel (TR)
Package / Case: 6-SMD, Flat Leads
Mounting Type: Surface Mount
Configuration: N and P-Channel
Operating Temperature: 150°C
Technology: MOSFET (Metal Oxide)
Power - Max: 1.4W (Ta)
Drain to Source Voltage (Vdss): 30V, 20V
Current - Continuous Drain (Id) @ 25°C: 4A (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 310pF @ 15V, 480pF @ 10V
Rds On (Max) @ Id, Vgs: 39.1mOhm @ 2A, 4.5V, 45mOhm @ 3.5A, 10V
Gate Charge (Qg) (Max) @ Vgs: 3.2nC @ 4.5V, 6.7nC @ 4.5V
Vgs(th) (Max) @ Id: 1V @ 1mA, 1.2V @ 1mA
Supplier Device Package: 6-TSOP-F
Part Status: Active
auf Bestellung 6000 Stücke:
Lieferzeit 21-28 Tag (e)
Anzahl Preis ohne MwSt
3000+0.49 EUR
6000+ 0.46 EUR
Mindestbestellmenge: 3000
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Technische Details SSM6L820R,LF Toshiba Semiconductor and Storage

Description: SMALL SIGNAL MOSFET N-CH+P-CH VD, Packaging: Tape & Reel (TR), Package / Case: 6-SMD, Flat Leads, Mounting Type: Surface Mount, Configuration: N and P-Channel, Operating Temperature: 150°C, Technology: MOSFET (Metal Oxide), Power - Max: 1.4W (Ta), Drain to Source Voltage (Vdss): 30V, 20V, Current - Continuous Drain (Id) @ 25°C: 4A (Ta), Input Capacitance (Ciss) (Max) @ Vds: 310pF @ 15V, 480pF @ 10V, Rds On (Max) @ Id, Vgs: 39.1mOhm @ 2A, 4.5V, 45mOhm @ 3.5A, 10V, Gate Charge (Qg) (Max) @ Vgs: 3.2nC @ 4.5V, 6.7nC @ 4.5V, Vgs(th) (Max) @ Id: 1V @ 1mA, 1.2V @ 1mA, Supplier Device Package: 6-TSOP-F, Part Status: Active.

Weitere Produktangebote SSM6L820R,LF nach Preis ab 0.32 EUR bis 1.38 EUR

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Preis ohne MwSt
SSM6L820R,LF SSM6L820R,LF Hersteller : Toshiba Semiconductor and Storage SSM6L820R_datasheet_en_20210603.pdf?did=63678&prodName=SSM6L820R Description: SMALL SIGNAL MOSFET N-CH+P-CH VD
Packaging: Cut Tape (CT)
Package / Case: 6-SMD, Flat Leads
Mounting Type: Surface Mount
Configuration: N and P-Channel
Operating Temperature: 150°C
Technology: MOSFET (Metal Oxide)
Power - Max: 1.4W (Ta)
Drain to Source Voltage (Vdss): 30V, 20V
Current - Continuous Drain (Id) @ 25°C: 4A (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 310pF @ 15V, 480pF @ 10V
Rds On (Max) @ Id, Vgs: 39.1mOhm @ 2A, 4.5V, 45mOhm @ 3.5A, 10V
Gate Charge (Qg) (Max) @ Vgs: 3.2nC @ 4.5V, 6.7nC @ 4.5V
Vgs(th) (Max) @ Id: 1V @ 1mA, 1.2V @ 1mA
Supplier Device Package: 6-TSOP-F
Part Status: Active
auf Bestellung 6000 Stücke:
Lieferzeit 21-28 Tag (e)
Anzahl Preis ohne MwSt
19+1.38 EUR
22+ 1.19 EUR
100+ 0.89 EUR
500+ 0.7 EUR
1000+ 0.54 EUR
Mindestbestellmenge: 19
SSM6L820R,LF Hersteller : Toshiba SSM6L820R_datasheet_en_20210603-2307075.pdf MOSFET Small Signal MOSFET N-ch+P-ch VDSS=30V, VGSS=-8/+12V, RDS(a.4.5V)=0.0391ohm, ID=4A
auf Bestellung 1090 Stücke:
Lieferzeit 14-28 Tag (e)
Anzahl Preis ohne MwSt
51+1.03 EUR
59+ 0.89 EUR
100+ 0.67 EUR
500+ 0.53 EUR
1000+ 0.41 EUR
3000+ 0.37 EUR
9000+ 0.32 EUR
Mindestbestellmenge: 51