SSM6N16FE,L3F

SSM6N16FE,L3F Toshiba Semiconductor and Storage


SSM6N16FE_datasheet_en_20170711.pdf?did=19750&prodName=SSM6N16FE Hersteller: Toshiba Semiconductor and Storage
Description: SMALL SIGNAL MOSFET N-CH X 2 VDS
Packaging: Tape & Reel (TR)
Package / Case: SOT-563, SOT-666
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: 150°C
Technology: MOSFET (Metal Oxide)
Power - Max: 150mW (Ta)
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 100mA (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 9.3pF @ 3V
Rds On (Max) @ Id, Vgs: 3Ohm @ 10mA, 4V
Vgs(th) (Max) @ Id: 1.1V @ 100µA
Supplier Device Package: ES6
Part Status: Active
auf Bestellung 8000 Stücke:

Lieferzeit 10-14 Tag (e)
Anzahl Preis
8000+0.10 EUR
Mindestbestellmenge: 8000
Im Einkaufswagen  Stück im Wert von  UAH
Produktrezensionen
Produktbewertung abgeben

Technische Details SSM6N16FE,L3F Toshiba Semiconductor and Storage

Description: SMALL SIGNAL MOSFET N-CH X 2 VDS, Packaging: Tape & Reel (TR), Package / Case: SOT-563, SOT-666, Mounting Type: Surface Mount, Configuration: 2 N-Channel (Dual), Operating Temperature: 150°C, Technology: MOSFET (Metal Oxide), Power - Max: 150mW (Ta), Drain to Source Voltage (Vdss): 20V, Current - Continuous Drain (Id) @ 25°C: 100mA (Ta), Input Capacitance (Ciss) (Max) @ Vds: 9.3pF @ 3V, Rds On (Max) @ Id, Vgs: 3Ohm @ 10mA, 4V, Vgs(th) (Max) @ Id: 1.1V @ 100µA, Supplier Device Package: ES6, Part Status: Active.

Weitere Produktangebote SSM6N16FE,L3F nach Preis ab 0.09 EUR bis 0.62 EUR

Foto Bezeichnung Hersteller Beschreibung Verfügbarkeit
Preis
SSM6N16FE,L3F SSM6N16FE,L3F Hersteller : Toshiba SSM6N16FE_datasheet_en_20170711-1661065.pdf MOSFET Sm-signal/HiSpeed2n1 ES6 (SOT-563)
auf Bestellung 7874 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
5+0.61 EUR
10+0.46 EUR
100+0.26 EUR
500+0.17 EUR
1000+0.13 EUR
2500+0.12 EUR
8000+0.09 EUR
Mindestbestellmenge: 5
Im Einkaufswagen  Stück im Wert von  UAH
SSM6N16FE,L3F SSM6N16FE,L3F Hersteller : Toshiba Semiconductor and Storage SSM6N16FE_datasheet_en_20170711.pdf?did=19750&prodName=SSM6N16FE Description: SMALL SIGNAL MOSFET N-CH X 2 VDS
Packaging: Cut Tape (CT)
Package / Case: SOT-563, SOT-666
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: 150°C
Technology: MOSFET (Metal Oxide)
Power - Max: 150mW (Ta)
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 100mA (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 9.3pF @ 3V
Rds On (Max) @ Id, Vgs: 3Ohm @ 10mA, 4V
Vgs(th) (Max) @ Id: 1.1V @ 100µA
Supplier Device Package: ES6
Part Status: Active
auf Bestellung 8000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
29+0.62 EUR
39+0.46 EUR
100+0.26 EUR
500+0.17 EUR
1000+0.13 EUR
2000+0.11 EUR
Mindestbestellmenge: 29
Im Einkaufswagen  Stück im Wert von  UAH