SSM6N16FE,L3F Toshiba Semiconductor and Storage
Hersteller: Toshiba Semiconductor and Storage
Description: SMALL SIGNAL MOSFET N-CH X 2 VDS
Part Status: Active
Supplier Device Package: ES6
Vgs(th) (Max) @ Id: 1.1V @ 100µA
Rds On (Max) @ Id, Vgs: 3Ohm @ 10mA, 4V
Input Capacitance (Ciss) (Max) @ Vds: 9.3pF @ 3V
Current - Continuous Drain (Id) @ 25°C: 100mA (Ta)
Drain to Source Voltage (Vdss): 20V
Power - Max: 150mW (Ta)
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C
Configuration: 2 N-Channel (Dual)
Mounting Type: Surface Mount
Package / Case: SOT-563, SOT-666
Packaging: Tape & Reel (TR)
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Technische Details SSM6N16FE,L3F Toshiba Semiconductor and Storage
Description: SMALL SIGNAL MOSFET N-CH X 2 VDS, Part Status: Active, Supplier Device Package: ES6, Vgs(th) (Max) @ Id: 1.1V @ 100µA, Rds On (Max) @ Id, Vgs: 3Ohm @ 10mA, 4V, Input Capacitance (Ciss) (Max) @ Vds: 9.3pF @ 3V, Current - Continuous Drain (Id) @ 25°C: 100mA (Ta), Drain to Source Voltage (Vdss): 20V, Power - Max: 150mW (Ta), Technology: MOSFET (Metal Oxide), Operating Temperature: 150°C, Configuration: 2 N-Channel (Dual), Mounting Type: Surface Mount, Package / Case: SOT-563, SOT-666, Packaging: Tape & Reel (TR).
Weitere Produktangebote SSM6N16FE,L3F nach Preis ab 0.11 EUR bis 0.74 EUR
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SSM6N16FE,L3F | Toshiba |
MOSFETs Sm-signal/HiSpeed2n1 ES6 (SOT-563) |
auf Bestellung 18765 Stücke: Lieferzeit 10-14 Tag (e) |
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SSM6N16FE,L3F | Toshiba Semiconductor and Storage |
Description: SMALL SIGNAL MOSFET N-CH X 2 VDS Part Status: Active Supplier Device Package: ES6 Vgs(th) (Max) @ Id: 1.1V @ 100µA Rds On (Max) @ Id, Vgs: 3Ohm @ 10mA, 4V Input Capacitance (Ciss) (Max) @ Vds: 9.3pF @ 3V Current - Continuous Drain (Id) @ 25°C: 100mA (Ta) Drain to Source Voltage (Vdss): 20V Power - Max: 150mW (Ta) Technology: MOSFET (Metal Oxide) Operating Temperature: 150°C Configuration: 2 N-Channel (Dual) Mounting Type: Surface Mount Package / Case: SOT-563, SOT-666 Packaging: Cut Tape (CT) |
auf Bestellung 8000 Stücke: Lieferzeit 10-14 Tag (e) |
|
| SSM6N16FE,L3F |
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Hersteller: Toshiba
MOSFETs Sm-signal/HiSpeed2n1 ES6 (SOT-563)
MOSFETs Sm-signal/HiSpeed2n1 ES6 (SOT-563)
auf Bestellung 18765 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 6+ | 0.63 EUR |
| 10+ | 0.38 EUR |
| 100+ | 0.24 EUR |
| 500+ | 0.18 EUR |
| 1000+ | 0.14 EUR |
| 5000+ | 0.11 EUR |
| 8000+ | 0.11 EUR |
| SSM6N16FE,L3F |
|
Hersteller: Toshiba Semiconductor and Storage
Description: SMALL SIGNAL MOSFET N-CH X 2 VDS
Part Status: Active
Supplier Device Package: ES6
Vgs(th) (Max) @ Id: 1.1V @ 100µA
Rds On (Max) @ Id, Vgs: 3Ohm @ 10mA, 4V
Input Capacitance (Ciss) (Max) @ Vds: 9.3pF @ 3V
Current - Continuous Drain (Id) @ 25°C: 100mA (Ta)
Drain to Source Voltage (Vdss): 20V
Power - Max: 150mW (Ta)
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C
Configuration: 2 N-Channel (Dual)
Mounting Type: Surface Mount
Package / Case: SOT-563, SOT-666
Packaging: Cut Tape (CT)
Description: SMALL SIGNAL MOSFET N-CH X 2 VDS
Part Status: Active
Supplier Device Package: ES6
Vgs(th) (Max) @ Id: 1.1V @ 100µA
Rds On (Max) @ Id, Vgs: 3Ohm @ 10mA, 4V
Input Capacitance (Ciss) (Max) @ Vds: 9.3pF @ 3V
Current - Continuous Drain (Id) @ 25°C: 100mA (Ta)
Drain to Source Voltage (Vdss): 20V
Power - Max: 150mW (Ta)
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C
Configuration: 2 N-Channel (Dual)
Mounting Type: Surface Mount
Package / Case: SOT-563, SOT-666
Packaging: Cut Tape (CT)
auf Bestellung 8000 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 29+ | 0.74 EUR |
| 39+ | 0.55 EUR |
| 100+ | 0.31 EUR |
| 500+ | 0.2 EUR |
| 1000+ | 0.15 EUR |
| 2000+ | 0.13 EUR |