Produkte > TOSHIBA SEMICONDUCTOR AND STORAGE > SSM6N16FE,L3F
SSM6N16FE,L3F

SSM6N16FE,L3F Toshiba Semiconductor and Storage

SSM6N16FE_datasheet_en_20170711.pdf?did=19750&prodName=SSM6N16FE Hersteller: Toshiba Semiconductor and Storage
Description: SMALL SIGNAL MOSFET N-CH X 2 VDS
Packaging: Tape & Reel (TR)
Package / Case: SOT-563, SOT-666
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: 150°C
Technology: MOSFET (Metal Oxide)
Power - Max: 150mW (Ta)
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 100mA (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 9.3pF @ 3V
Rds On (Max) @ Id, Vgs: 3Ohm @ 10mA, 4V
Vgs(th) (Max) @ Id: 1.1V @ 100µA
Supplier Device Package: ES6
Part Status: Active
auf Bestellung 8000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
8000+0.1 EUR
Mindestbestellmenge: 8000
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Technische Details SSM6N16FE,L3F Toshiba Semiconductor and Storage

Description: SMALL SIGNAL MOSFET N-CH X 2 VDS, Packaging: Tape & Reel (TR), Package / Case: SOT-563, SOT-666, Mounting Type: Surface Mount, Configuration: 2 N-Channel (Dual), Operating Temperature: 150°C, Technology: MOSFET (Metal Oxide), Power - Max: 150mW (Ta), Drain to Source Voltage (Vdss): 20V, Current - Continuous Drain (Id) @ 25°C: 100mA (Ta), Input Capacitance (Ciss) (Max) @ Vds: 9.3pF @ 3V, Rds On (Max) @ Id, Vgs: 3Ohm @ 10mA, 4V, Vgs(th) (Max) @ Id: 1.1V @ 100µA, Supplier Device Package: ES6, Part Status: Active.

Weitere Produktangebote SSM6N16FE,L3F nach Preis ab 0.11 EUR bis 0.9 EUR

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Preis ohne MwSt
SSM6N16FE,L3F SSM6N16FE,L3F Hersteller : Toshiba Semiconductor and Storage SSM6N16FE_datasheet_en_20170711.pdf?did=19750&prodName=SSM6N16FE Description: SMALL SIGNAL MOSFET N-CH X 2 VDS
Packaging: Cut Tape (CT)
Package / Case: SOT-563, SOT-666
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: 150°C
Technology: MOSFET (Metal Oxide)
Power - Max: 150mW (Ta)
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 100mA (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 9.3pF @ 3V
Rds On (Max) @ Id, Vgs: 3Ohm @ 10mA, 4V
Vgs(th) (Max) @ Id: 1.1V @ 100µA
Supplier Device Package: ES6
Part Status: Active
auf Bestellung 8000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
29+0.62 EUR
39+ 0.46 EUR
100+ 0.26 EUR
500+ 0.17 EUR
1000+ 0.13 EUR
2000+ 0.11 EUR
Mindestbestellmenge: 29
SSM6N16FE,L3F SSM6N16FE,L3F Hersteller : Toshiba SSM6N16FE_datasheet_en_20170711-1661065.pdf MOSFET Sm-signal/HiSpeed2n1 ES6 (SOT-563)
auf Bestellung 7874 Stücke:
Lieferzeit 14-28 Tag (e)
Anzahl Preis ohne MwSt
58+0.9 EUR
77+ 0.68 EUR
136+ 0.38 EUR
500+ 0.25 EUR
1000+ 0.2 EUR
2500+ 0.17 EUR
8000+ 0.14 EUR
Mindestbestellmenge: 58