SSM6N35AFE,LF Toshiba Semiconductor and Storage
Hersteller: Toshiba Semiconductor and Storage
Description: MOSFET 2N-CH 20V 0.25A ES6
Packaging: Tape & Reel (TR)
Package / Case: SOT-563, SOT-666
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: 150°C
Technology: MOSFET (Metal Oxide)
Power - Max: 250mW
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 250mA (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 36pF @ 10V
Rds On (Max) @ Id, Vgs: 1.1Ohm @ 150mA, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 0.34nC @ 4.5V
FET Feature: Logic Level Gate, 1.2V Drive
Vgs(th) (Max) @ Id: 1V @ 100µA
Supplier Device Package: ES6
| Anzahl | Privatkunde |
|---|---|
| 4000+ | 0.1 EUR |
| 8000+ | 0.087 EUR |
| 12000+ | 0.084 EUR |
| 20000+ | 0.083 EUR |
| 28000+ | 0.081 EUR |
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Technische Details SSM6N35AFE,LF Toshiba Semiconductor and Storage
Description: MOSFET 2N-CH 20V 0.25A ES6, Packaging: Tape & Reel (TR), Package / Case: SOT-563, SOT-666, Mounting Type: Surface Mount, Configuration: 2 N-Channel (Dual), Operating Temperature: 150°C, Technology: MOSFET (Metal Oxide), Power - Max: 250mW, Drain to Source Voltage (Vdss): 20V, Current - Continuous Drain (Id) @ 25°C: 250mA (Ta), Input Capacitance (Ciss) (Max) @ Vds: 36pF @ 10V, Rds On (Max) @ Id, Vgs: 1.1Ohm @ 150mA, 4.5V, Gate Charge (Qg) (Max) @ Vgs: 0.34nC @ 4.5V, FET Feature: Logic Level Gate, 1.2V Drive, Vgs(th) (Max) @ Id: 1V @ 100µA, Supplier Device Package: ES6.
Weitere Produktangebote SSM6N35AFE,LF nach Preis ab 0.11 EUR bis 0.65 EUR
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SSM6N35AFE,LF | Toshiba Semiconductor and Storage |
Description: MOSFET 2N-CH 20V 0.25A ES6 Mounting Type: Surface Mount Package / Case: SOT-563, SOT-666 Packaging: Cut Tape (CT) Supplier Device Package: ES6 Vgs(th) (Max) @ Id: 1V @ 100µA FET Feature: Logic Level Gate, 1.2V Drive Gate Charge (Qg) (Max) @ Vgs: 0.34nC @ 4.5V Rds On (Max) @ Id, Vgs: 1.1Ohm @ 150mA, 4.5V Input Capacitance (Ciss) (Max) @ Vds: 36pF @ 10V Current - Continuous Drain (Id) @ 25°C: 250mA (Ta) Drain to Source Voltage (Vdss): 20V Power - Max: 250mW Technology: MOSFET (Metal Oxide) Operating Temperature: 150°C Configuration: 2 N-Channel (Dual) |
auf Bestellung 35041 Stücke: Lieferzeit 10-14 Tag (e) |
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SSM6N35AFE,LF | Toshiba |
MOSFETs LowON Res MOSFET ID=.25A VDSS=20V |
auf Bestellung 97294 Stücke: Lieferzeit 10-14 Tag (e) |
|
| SSM6N35AFE,LF |
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Hersteller: Toshiba Semiconductor and Storage
Description: MOSFET 2N-CH 20V 0.25A ES6
Mounting Type: Surface Mount
Package / Case: SOT-563, SOT-666
Packaging: Cut Tape (CT)
Supplier Device Package: ES6
Vgs(th) (Max) @ Id: 1V @ 100µA
FET Feature: Logic Level Gate, 1.2V Drive
Gate Charge (Qg) (Max) @ Vgs: 0.34nC @ 4.5V
Rds On (Max) @ Id, Vgs: 1.1Ohm @ 150mA, 4.5V
Input Capacitance (Ciss) (Max) @ Vds: 36pF @ 10V
Current - Continuous Drain (Id) @ 25°C: 250mA (Ta)
Drain to Source Voltage (Vdss): 20V
Power - Max: 250mW
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C
Configuration: 2 N-Channel (Dual)
Description: MOSFET 2N-CH 20V 0.25A ES6
Mounting Type: Surface Mount
Package / Case: SOT-563, SOT-666
Packaging: Cut Tape (CT)
Supplier Device Package: ES6
Vgs(th) (Max) @ Id: 1V @ 100µA
FET Feature: Logic Level Gate, 1.2V Drive
Gate Charge (Qg) (Max) @ Vgs: 0.34nC @ 4.5V
Rds On (Max) @ Id, Vgs: 1.1Ohm @ 150mA, 4.5V
Input Capacitance (Ciss) (Max) @ Vds: 36pF @ 10V
Current - Continuous Drain (Id) @ 25°C: 250mA (Ta)
Drain to Source Voltage (Vdss): 20V
Power - Max: 250mW
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C
Configuration: 2 N-Channel (Dual)
auf Bestellung 35041 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 67+ | 0.31 EUR |
| 113+ | 0.19 EUR |
| 157+ | 0.13 EUR |
| 500+ | 0.12 EUR |
| 1000+ | 0.11 EUR |
| SSM6N35AFE,LF |
|
Hersteller: Toshiba
MOSFETs LowON Res MOSFET ID=.25A VDSS=20V
MOSFETs LowON Res MOSFET ID=.25A VDSS=20V
auf Bestellung 97294 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 6+ | 0.65 EUR |
| 10+ | 0.39 EUR |
| 100+ | 0.25 EUR |
| 500+ | 0.19 EUR |
| 1000+ | 0.17 EUR |
| 2000+ | 0.14 EUR |
| 4000+ | 0.12 EUR |