SSM6N35AFE,LF Toshiba Semiconductor and Storage
Hersteller: Toshiba Semiconductor and StorageDescription: MOSFET 2N-CH 20V 0.25A ES6
Packaging: Tape & Reel (TR)
Package / Case: SOT-563, SOT-666
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: 150°C
Technology: MOSFET (Metal Oxide)
Power - Max: 250mW
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 250mA (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 36pF @ 10V
Rds On (Max) @ Id, Vgs: 1.1Ohm @ 150mA, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 0.34nC @ 4.5V
FET Feature: Logic Level Gate, 1.2V Drive
Vgs(th) (Max) @ Id: 1V @ 100µA
Supplier Device Package: ES6
auf Bestellung 32000 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 4000+ | 0.084 EUR |
| 8000+ | 0.073 EUR |
| 12000+ | 0.071 EUR |
| 20000+ | 0.07 EUR |
| 28000+ | 0.068 EUR |
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Technische Details SSM6N35AFE,LF Toshiba Semiconductor and Storage
Description: MOSFET 2N-CH 20V 0.25A ES6, Packaging: Tape & Reel (TR), Package / Case: SOT-563, SOT-666, Mounting Type: Surface Mount, Configuration: 2 N-Channel (Dual), Operating Temperature: 150°C, Technology: MOSFET (Metal Oxide), Power - Max: 250mW, Drain to Source Voltage (Vdss): 20V, Current - Continuous Drain (Id) @ 25°C: 250mA (Ta), Input Capacitance (Ciss) (Max) @ Vds: 36pF @ 10V, Rds On (Max) @ Id, Vgs: 1.1Ohm @ 150mA, 4.5V, Gate Charge (Qg) (Max) @ Vgs: 0.34nC @ 4.5V, FET Feature: Logic Level Gate, 1.2V Drive, Vgs(th) (Max) @ Id: 1V @ 100µA, Supplier Device Package: ES6.
Weitere Produktangebote SSM6N35AFE,LF nach Preis ab 0.083 EUR bis 0.59 EUR
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SSM6N35AFE,LF | Hersteller : Toshiba Semiconductor and Storage |
Description: MOSFET 2N-CH 20V 0.25A ES6 Packaging: Cut Tape (CT) Package / Case: SOT-563, SOT-666 Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Operating Temperature: 150°C Technology: MOSFET (Metal Oxide) Power - Max: 250mW Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 250mA (Ta) Input Capacitance (Ciss) (Max) @ Vds: 36pF @ 10V Rds On (Max) @ Id, Vgs: 1.1Ohm @ 150mA, 4.5V Gate Charge (Qg) (Max) @ Vgs: 0.34nC @ 4.5V FET Feature: Logic Level Gate, 1.2V Drive Vgs(th) (Max) @ Id: 1V @ 100µA Supplier Device Package: ES6 |
auf Bestellung 35041 Stücke: Lieferzeit 10-14 Tag (e) |
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SSM6N35AFE,LF | Hersteller : Toshiba |
MOSFET LowON Res MOSFET ID=.25A VDSS=20V |
auf Bestellung 165196 Stücke: Lieferzeit 10-14 Tag (e) |
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