SSM6N35AFU,LF

SSM6N35AFU,LF Toshiba Semiconductor and Storage


SSM6N35AFU_datasheet_en_20161121.pdf?did=55424&prodName=SSM6N35AFU Hersteller: Toshiba Semiconductor and Storage
Description: MOSFET 2N-CH 20V 0.25A US6
Packaging: Tape & Reel (TR)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: 150°C
Technology: MOSFET (Metal Oxide)
Power - Max: 285mW (Ta)
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 250mA (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 36pF @ 10V
Rds On (Max) @ Id, Vgs: 1.1Ohm @ 150mA, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 0.34nC @ 4.5V
Vgs(th) (Max) @ Id: 1V @ 100µA
Supplier Device Package: US6
auf Bestellung 3000 Stücke:

Lieferzeit 21-28 Tag (e)
Anzahl Preis ohne MwSt
3000+0.22 EUR
Mindestbestellmenge: 3000
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Technische Details SSM6N35AFU,LF Toshiba Semiconductor and Storage

Description: MOSFET 2N-CH 20V 0.25A US6, Packaging: Tape & Reel (TR), Package / Case: 6-TSSOP, SC-88, SOT-363, Mounting Type: Surface Mount, Configuration: 2 N-Channel (Dual), Operating Temperature: 150°C, Technology: MOSFET (Metal Oxide), Power - Max: 285mW (Ta), Drain to Source Voltage (Vdss): 20V, Current - Continuous Drain (Id) @ 25°C: 250mA (Ta), Input Capacitance (Ciss) (Max) @ Vds: 36pF @ 10V, Rds On (Max) @ Id, Vgs: 1.1Ohm @ 150mA, 4.5V, Gate Charge (Qg) (Max) @ Vgs: 0.34nC @ 4.5V, Vgs(th) (Max) @ Id: 1V @ 100µA, Supplier Device Package: US6.

Weitere Produktangebote SSM6N35AFU,LF nach Preis ab 0.24 EUR bis 1.14 EUR

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SSM6N35AFU,LF SSM6N35AFU,LF Hersteller : Toshiba Semiconductor and Storage SSM6N35AFU_datasheet_en_20161121.pdf?did=55424&prodName=SSM6N35AFU Description: MOSFET 2N-CH 20V 0.25A US6
Packaging: Cut Tape (CT)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: 150°C
Technology: MOSFET (Metal Oxide)
Power - Max: 285mW (Ta)
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 250mA (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 36pF @ 10V
Rds On (Max) @ Id, Vgs: 1.1Ohm @ 150mA, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 0.34nC @ 4.5V
Vgs(th) (Max) @ Id: 1V @ 100µA
Supplier Device Package: US6
auf Bestellung 4325 Stücke:
Lieferzeit 21-28 Tag (e)
Anzahl Preis ohne MwSt
27+0.99 EUR
38+ 0.7 EUR
100+ 0.35 EUR
500+ 0.31 EUR
1000+ 0.24 EUR
Mindestbestellmenge: 27
SSM6N35AFU,LF SSM6N35AFU,LF Hersteller : Toshiba SSM6N35AFU_datasheet_en_20161121-1140085.pdf MOSFET LowON Res MOSFET ID=.25A VDSS=20V
auf Bestellung 589 Stücke:
Lieferzeit 14-28 Tag (e)
Anzahl Preis ohne MwSt
46+1.14 EUR
62+ 0.85 EUR
100+ 0.53 EUR
500+ 0.35 EUR
Mindestbestellmenge: 46