SSM6N35AFU,LF Toshiba Semiconductor and Storage
Hersteller: Toshiba Semiconductor and Storage
Description: MOSFET 2N-CH 20V 0.25A US6
Packaging: Tape & Reel (TR)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: 150°C
Technology: MOSFET (Metal Oxide)
Power - Max: 285mW (Ta)
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 250mA (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 36pF @ 10V
Rds On (Max) @ Id, Vgs: 1.1Ohm @ 150mA, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 0.34nC @ 4.5V
Vgs(th) (Max) @ Id: 1V @ 100µA
Supplier Device Package: US6
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Technische Details SSM6N35AFU,LF Toshiba Semiconductor and Storage
Description: MOSFET 2N-CH 20V 0.25A US6, Packaging: Tape & Reel (TR), Package / Case: 6-TSSOP, SC-88, SOT-363, Mounting Type: Surface Mount, Configuration: 2 N-Channel (Dual), Operating Temperature: 150°C, Technology: MOSFET (Metal Oxide), Power - Max: 285mW (Ta), Drain to Source Voltage (Vdss): 20V, Current - Continuous Drain (Id) @ 25°C: 250mA (Ta), Input Capacitance (Ciss) (Max) @ Vds: 36pF @ 10V, Rds On (Max) @ Id, Vgs: 1.1Ohm @ 150mA, 4.5V, Gate Charge (Qg) (Max) @ Vgs: 0.34nC @ 4.5V, Vgs(th) (Max) @ Id: 1V @ 100µA, Supplier Device Package: US6.
Weitere Produktangebote SSM6N35AFU,LF nach Preis ab 0.12 EUR bis 0.7 EUR
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SSM6N35AFU,LF | Toshiba |
MOSFETs LowON Res MOSFET ID=.25A VDSS=20V |
auf Bestellung 5440 Stücke: Lieferzeit 10-14 Tag (e) |
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SSM6N35AFU,LF | Toshiba Semiconductor and Storage |
Description: MOSFET 2N-CH 20V 0.25A US6Supplier Device Package: US6 Vgs(th) (Max) @ Id: 1V @ 100µA Gate Charge (Qg) (Max) @ Vgs: 0.34nC @ 4.5V Rds On (Max) @ Id, Vgs: 1.1Ohm @ 150mA, 4.5V Input Capacitance (Ciss) (Max) @ Vds: 36pF @ 10V Current - Continuous Drain (Id) @ 25°C: 250mA (Ta) Drain to Source Voltage (Vdss): 20V Power - Max: 285mW (Ta) Technology: MOSFET (Metal Oxide) Operating Temperature: 150°C Configuration: 2 N-Channel (Dual) Mounting Type: Surface Mount Package / Case: 6-TSSOP, SC-88, SOT-363 Packaging: Cut Tape (CT) |
auf Bestellung 6225 Stücke: Lieferzeit 10-14 Tag (e) |
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| SSM6N35AFU,LF |
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Hersteller: Toshiba
MOSFETs LowON Res MOSFET ID=.25A VDSS=20V
MOSFETs LowON Res MOSFET ID=.25A VDSS=20V
auf Bestellung 5440 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 5+ | 0.67 EUR |
| 10+ | 0.4 EUR |
| 100+ | 0.26 EUR |
| 500+ | 0.19 EUR |
| 1000+ | 0.17 EUR |
| 3000+ | 0.14 EUR |
| 6000+ | 0.12 EUR |
| SSM6N35AFU,LF |
![]() |
Hersteller: Toshiba Semiconductor and Storage
Description: MOSFET 2N-CH 20V 0.25A US6
Supplier Device Package: US6
Vgs(th) (Max) @ Id: 1V @ 100µA
Gate Charge (Qg) (Max) @ Vgs: 0.34nC @ 4.5V
Rds On (Max) @ Id, Vgs: 1.1Ohm @ 150mA, 4.5V
Input Capacitance (Ciss) (Max) @ Vds: 36pF @ 10V
Current - Continuous Drain (Id) @ 25°C: 250mA (Ta)
Drain to Source Voltage (Vdss): 20V
Power - Max: 285mW (Ta)
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C
Configuration: 2 N-Channel (Dual)
Mounting Type: Surface Mount
Package / Case: 6-TSSOP, SC-88, SOT-363
Packaging: Cut Tape (CT)
Description: MOSFET 2N-CH 20V 0.25A US6
Supplier Device Package: US6
Vgs(th) (Max) @ Id: 1V @ 100µA
Gate Charge (Qg) (Max) @ Vgs: 0.34nC @ 4.5V
Rds On (Max) @ Id, Vgs: 1.1Ohm @ 150mA, 4.5V
Input Capacitance (Ciss) (Max) @ Vds: 36pF @ 10V
Current - Continuous Drain (Id) @ 25°C: 250mA (Ta)
Drain to Source Voltage (Vdss): 20V
Power - Max: 285mW (Ta)
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C
Configuration: 2 N-Channel (Dual)
Mounting Type: Surface Mount
Package / Case: 6-TSSOP, SC-88, SOT-363
Packaging: Cut Tape (CT)
auf Bestellung 6225 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 25+ | 0.7 EUR |
| 41+ | 0.43 EUR |
| 100+ | 0.27 EUR |
| 500+ | 0.21 EUR |
| 1000+ | 0.17 EUR |


