SSM6N35FE,LM(T TOSHIBA

Category: Multi channel transistors, Description: Transistor: N-MOSFET x2; unipolar; 20V; 0.18A; 150mW; SOT563; ESD, Case: SOT563, Mounting: SMD, Gate-source voltage: ±10V, Drain-source voltage: 20V, Drain current: 0.18A, On-state resistance: 20Ω, Type of transistor: N-MOSFET x2, Power dissipation: 0.15W, Polarisation: unipolar, Kind of package: reel; tape, Version: ESD, Kind of channel: enhancement, Anzahl je Verpackung: 5 Stücke.