SSM6N35FE,LM(T TOSHIBA

Category: Multi channel transistors, Description: Transistor: N-MOSFET x2; unipolar; 20V; 0.18A; 150mW; SOT563; ESD, Case: SOT563, Mounting: SMD, On-state resistance: 20Ω, Kind of channel: enhancement, Version: ESD, Type of transistor: N-MOSFET x2, Kind of package: reel; tape, Polarisation: unipolar, Power dissipation: 0.15W, Drain current: 0.18A, Gate-source voltage: ±10V, Drain-source voltage: 20V, Anzahl je Verpackung: 5 Stücke.