Produkte > TOSHIBA > SSM6N35FE,LM
SSM6N35FE,LM

SSM6N35FE,LM Toshiba


SSM6N35FE_datasheet_en_20140301-771405.pdf Hersteller: Toshiba
MOSFETs Small Signal MOSFET
auf Bestellung 1980 Stücke:

Lieferzeit 10-14 Tag (e)
Anzahl Preis
7+0.46 EUR
10+0.31 EUR
100+0.16 EUR
1000+0.13 EUR
4000+0.11 EUR
8000+0.08 EUR
24000+0.08 EUR
Mindestbestellmenge: 7
Im Einkaufswagen  Stück im Wert von  UAH
Produktrezensionen
Produktbewertung abgeben

Technische Details SSM6N35FE,LM Toshiba

Description: MOSFET 2N-CH 20V 0.18A ES6, Packaging: Tape & Reel (TR), Package / Case: SOT-563, SOT-666, Mounting Type: Surface Mount, Configuration: 2 N-Channel (Dual), Operating Temperature: 150°C (TJ), Technology: MOSFET (Metal Oxide), Power - Max: 150mW, Drain to Source Voltage (Vdss): 20V, Current - Continuous Drain (Id) @ 25°C: 180mA, Input Capacitance (Ciss) (Max) @ Vds: 9.5pF @ 3V, Rds On (Max) @ Id, Vgs: 3Ohm @ 50mA, 4V, FET Feature: Logic Level Gate, Vgs(th) (Max) @ Id: 1V @ 1mA, Supplier Device Package: ES6.

Weitere Produktangebote SSM6N35FE,LM

Foto Bezeichnung Hersteller Beschreibung Verfügbarkeit
Preis
SSM6N35FE,LM SSM6N35FE,LM Hersteller : Toshiba Semiconductor and Storage Mosfets_Prod_Guide.pdf Description: MOSFET 2N-CH 20V 0.18A ES6
Packaging: Tape & Reel (TR)
Package / Case: SOT-563, SOT-666
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 150mW
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 180mA
Input Capacitance (Ciss) (Max) @ Vds: 9.5pF @ 3V
Rds On (Max) @ Id, Vgs: 3Ohm @ 50mA, 4V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 1V @ 1mA
Supplier Device Package: ES6
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
SSM6N35FE,LM SSM6N35FE,LM Hersteller : Toshiba Semiconductor and Storage Mosfets_Prod_Guide.pdf Description: MOSFET 2N-CH 20V 0.18A ES6
Packaging: Cut Tape (CT)
Package / Case: SOT-563, SOT-666
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 150mW
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 180mA
Input Capacitance (Ciss) (Max) @ Vds: 9.5pF @ 3V
Rds On (Max) @ Id, Vgs: 3Ohm @ 50mA, 4V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 1V @ 1mA
Supplier Device Package: ES6
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH