Produkte > TOSHIBA SEMICONDUCTOR AND STORAGE > SSM6N36TU,LF
SSM6N36TU,LF

SSM6N36TU,LF Toshiba Semiconductor and Storage

docget.jsp?did=11227&prodName=SSM6N36TU Hersteller: Toshiba Semiconductor and Storage
Description: SMALL SIGNAL MOSFET N-CH X 2 VDS
Packaging: Cut Tape (CT)
Package / Case: 6-SMD, Flat Leads
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: 150°C
Technology: MOSFET (Metal Oxide)
Power - Max: 500mW (Ta)
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 500mA (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 46pF @ 10V
Rds On (Max) @ Id, Vgs: 630mOhm @ 200mA, 5V
Gate Charge (Qg) (Max) @ Vgs: 1.23nC @ 4V
FET Feature: Logic Level Gate, 1.5V Drive
Vgs(th) (Max) @ Id: 1V @ 1mA
Supplier Device Package: UF6
Part Status: Active
auf Bestellung 2859 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
27+0.67 EUR
33+ 0.55 EUR
100+ 0.37 EUR
500+ 0.28 EUR
1000+ 0.21 EUR
Mindestbestellmenge: 27
Produktrezensionen
Produktbewertung abgeben

Technische Details SSM6N36TU,LF Toshiba Semiconductor and Storage

Description: SMALL SIGNAL MOSFET N-CH X 2 VDS, Packaging: Tape & Reel (TR), Package / Case: 6-SMD, Flat Leads, Mounting Type: Surface Mount, Configuration: 2 N-Channel (Dual), Operating Temperature: 150°C, Technology: MOSFET (Metal Oxide), Power - Max: 500mW (Ta), Drain to Source Voltage (Vdss): 20V, Current - Continuous Drain (Id) @ 25°C: 500mA (Ta), Input Capacitance (Ciss) (Max) @ Vds: 46pF @ 10V, Rds On (Max) @ Id, Vgs: 630mOhm @ 200mA, 5V, Gate Charge (Qg) (Max) @ Vgs: 1.23nC @ 4V, FET Feature: Logic Level Gate, 1.5V Drive, Vgs(th) (Max) @ Id: 1V @ 1mA, Supplier Device Package: UF6, Part Status: Active.

Weitere Produktangebote SSM6N36TU,LF nach Preis ab 0.2 EUR bis 0.89 EUR

Foto Bezeichnung Hersteller Beschreibung Verfügbarkeit
Preis ohne MwSt
SSM6N36TU,LF SSM6N36TU,LF Hersteller : Toshiba SSM6N36TU_datasheet_en_20140301-1661063.pdf MOSFET Sm-signal/HiSpeed2n1 UF6 (SOT-363F)
auf Bestellung 3783 Stücke:
Lieferzeit 14-28 Tag (e)
Anzahl Preis ohne MwSt
59+0.89 EUR
76+ 0.69 EUR
135+ 0.39 EUR
1000+ 0.26 EUR
3000+ 0.25 EUR
9000+ 0.21 EUR
24000+ 0.2 EUR
Mindestbestellmenge: 59
SSM6N36TU,LF SSM6N36TU,LF Hersteller : Toshiba Semiconductor and Storage docget.jsp?did=11227&prodName=SSM6N36TU Description: SMALL SIGNAL MOSFET N-CH X 2 VDS
Packaging: Tape & Reel (TR)
Package / Case: 6-SMD, Flat Leads
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: 150°C
Technology: MOSFET (Metal Oxide)
Power - Max: 500mW (Ta)
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 500mA (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 46pF @ 10V
Rds On (Max) @ Id, Vgs: 630mOhm @ 200mA, 5V
Gate Charge (Qg) (Max) @ Vgs: 1.23nC @ 4V
FET Feature: Logic Level Gate, 1.5V Drive
Vgs(th) (Max) @ Id: 1V @ 1mA
Supplier Device Package: UF6
Part Status: Active
Produkt ist nicht verfügbar