SSM6N40TU,LF

SSM6N40TU,LF Toshiba Semiconductor and Storage


Hersteller: Toshiba Semiconductor and Storage
Description: MOSFET 2N-CH 30V 1.6A UF6
Packaging: Tape & Reel (TR)
Package / Case: 6-SMD, Flat Leads
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: 150°C
Technology: MOSFET (Metal Oxide)
Power - Max: 500mW (Ta)
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 1.6A (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 180pF @ 15V
Rds On (Max) @ Id, Vgs: 122mOhm @ 1A, 10V
Gate Charge (Qg) (Max) @ Vgs: 5.1nC @ 10V
FET Feature: Logic Level Gate, 4V Drive
Vgs(th) (Max) @ Id: 2.6V @ 1mA
Supplier Device Package: UF6
auf Bestellung 9000 Stücke:

Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
3000+0.2 EUR
Mindestbestellmenge: 3000
Produktrezensionen
Produktbewertung abgeben

Technische Details SSM6N40TU,LF Toshiba Semiconductor and Storage

Description: MOSFET 2N-CH 30V 1.6A UF6, Packaging: Tape & Reel (TR), Package / Case: 6-SMD, Flat Leads, Mounting Type: Surface Mount, Configuration: 2 N-Channel (Dual), Operating Temperature: 150°C, Technology: MOSFET (Metal Oxide), Power - Max: 500mW (Ta), Drain to Source Voltage (Vdss): 30V, Current - Continuous Drain (Id) @ 25°C: 1.6A (Ta), Input Capacitance (Ciss) (Max) @ Vds: 180pF @ 15V, Rds On (Max) @ Id, Vgs: 122mOhm @ 1A, 10V, Gate Charge (Qg) (Max) @ Vgs: 5.1nC @ 10V, FET Feature: Logic Level Gate, 4V Drive, Vgs(th) (Max) @ Id: 2.6V @ 1mA, Supplier Device Package: UF6.

Weitere Produktangebote SSM6N40TU,LF nach Preis ab 0.26 EUR bis 1.11 EUR

Foto Bezeichnung Hersteller Beschreibung Verfügbarkeit
Preis ohne MwSt
SSM6N40TU,LF SSM6N40TU,LF Hersteller : Toshiba Semiconductor and Storage Description: MOSFET 2N-CH 30V 1.6A UF6
Packaging: Cut Tape (CT)
Package / Case: 6-SMD, Flat Leads
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: 150°C
Technology: MOSFET (Metal Oxide)
Power - Max: 500mW (Ta)
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 1.6A (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 180pF @ 15V
Rds On (Max) @ Id, Vgs: 122mOhm @ 1A, 10V
Gate Charge (Qg) (Max) @ Vgs: 5.1nC @ 10V
FET Feature: Logic Level Gate, 4V Drive
Vgs(th) (Max) @ Id: 2.6V @ 1mA
Supplier Device Package: UF6
auf Bestellung 10456 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
24+0.74 EUR
31+ 0.73 EUR
100+ 0.44 EUR
500+ 0.41 EUR
1000+ 0.28 EUR
Mindestbestellmenge: 24
SSM6N40TU,LF SSM6N40TU,LF Hersteller : Toshiba SSM6N40TU_datasheet_en_20140301-1627227.pdf MOSFET Small Signal MOSFET N-ch x 2 VDSS=30V, VGSS=+/-20V, ID=1.6A, RDS(ON)=0.182Ohm a. 4V, in UF6 package
auf Bestellung 3032 Stücke:
Lieferzeit 14-28 Tag (e)
Anzahl Preis ohne MwSt
47+1.11 EUR
60+ 0.87 EUR
108+ 0.48 EUR
1000+ 0.33 EUR
3000+ 0.29 EUR
9000+ 0.28 EUR
24000+ 0.26 EUR
Mindestbestellmenge: 47