SSM6N40TU,LF Toshiba Semiconductor and Storage
Hersteller: Toshiba Semiconductor and StorageDescription: MOSFET 2N-CH 30V 1.6A UF6
Packaging: Tape & Reel (TR)
Package / Case: 6-SMD, Flat Leads
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: 150°C
Technology: MOSFET (Metal Oxide)
Power - Max: 500mW (Ta)
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 1.6A (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 180pF @ 15V
Rds On (Max) @ Id, Vgs: 122mOhm @ 1A, 10V
Gate Charge (Qg) (Max) @ Vgs: 5.1nC @ 10V
FET Feature: Logic Level Gate, 4V Drive
Vgs(th) (Max) @ Id: 2.6V @ 1mA
Supplier Device Package: UF6
auf Bestellung 12000 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 3000+ | 0.2 EUR |
| 6000+ | 0.18 EUR |
| 9000+ | 0.17 EUR |
Produktrezensionen
Produktbewertung abgeben
Technische Details SSM6N40TU,LF Toshiba Semiconductor and Storage
Description: MOSFET 2N-CH 30V 1.6A UF6, Packaging: Tape & Reel (TR), Package / Case: 6-SMD, Flat Leads, Mounting Type: Surface Mount, Configuration: 2 N-Channel (Dual), Operating Temperature: 150°C, Technology: MOSFET (Metal Oxide), Power - Max: 500mW (Ta), Drain to Source Voltage (Vdss): 30V, Current - Continuous Drain (Id) @ 25°C: 1.6A (Ta), Input Capacitance (Ciss) (Max) @ Vds: 180pF @ 15V, Rds On (Max) @ Id, Vgs: 122mOhm @ 1A, 10V, Gate Charge (Qg) (Max) @ Vgs: 5.1nC @ 10V, FET Feature: Logic Level Gate, 4V Drive, Vgs(th) (Max) @ Id: 2.6V @ 1mA, Supplier Device Package: UF6.
Weitere Produktangebote SSM6N40TU,LF nach Preis ab 0.18 EUR bis 0.94 EUR
| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis | ||||||||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
|
SSM6N40TU,LF | Hersteller : Toshiba Semiconductor and Storage |
Description: MOSFET 2N-CH 30V 1.6A UF6 Packaging: Cut Tape (CT) Package / Case: 6-SMD, Flat Leads Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Operating Temperature: 150°C Technology: MOSFET (Metal Oxide) Power - Max: 500mW (Ta) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 1.6A (Ta) Input Capacitance (Ciss) (Max) @ Vds: 180pF @ 15V Rds On (Max) @ Id, Vgs: 122mOhm @ 1A, 10V Gate Charge (Qg) (Max) @ Vgs: 5.1nC @ 10V FET Feature: Logic Level Gate, 4V Drive Vgs(th) (Max) @ Id: 2.6V @ 1mA Supplier Device Package: UF6 |
auf Bestellung 13434 Stücke: Lieferzeit 10-14 Tag (e) |
|
||||||||||||||
 |
SSM6N40TU,LF | Hersteller : Toshiba |
MOSFETs Small Signal MOSFET N-ch x 2 VDSS=30V, VGSS=+/-20V, ID=1.6A, RDS(ON)=0.182Ohm @ 4V, in UF6 package |
auf Bestellung 191 Stücke: Lieferzeit 10-14 Tag (e) |
|