SSM6N43FU,LF

SSM6N43FU,LF Toshiba Semiconductor and Storage


docget.jsp?did=407&prodName=SSM6N43FU Hersteller: Toshiba Semiconductor and Storage
Description: MOSFET 2N-CH 20V 0.5A US6
Packaging: Tape & Reel (TR)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 200mW
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 500mA
Input Capacitance (Ciss) (Max) @ Vds: 46pF @ 10V
Rds On (Max) @ Id, Vgs: 630mOhm @ 200mA, 5V
Gate Charge (Qg) (Max) @ Vgs: 1.23nC @ 4V
FET Feature: Logic Level Gate, 1.5V Drive
Vgs(th) (Max) @ Id: 1V @ 1mA
Supplier Device Package: US6
auf Bestellung 12000 Stücke:

Lieferzeit 10-14 Tag (e)
Anzahl Preis
3000+0.11 EUR
6000+0.1 EUR
9000+0.097 EUR
Mindestbestellmenge: 3000
Im Einkaufswagen  Stück im Wert von  UAH
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Technische Details SSM6N43FU,LF Toshiba Semiconductor and Storage

Description: MOSFET 2N-CH 20V 0.5A US6, Packaging: Tape & Reel (TR), Package / Case: 6-TSSOP, SC-88, SOT-363, Mounting Type: Surface Mount, Configuration: 2 N-Channel (Dual), Operating Temperature: 150°C (TJ), Technology: MOSFET (Metal Oxide), Power - Max: 200mW, Drain to Source Voltage (Vdss): 20V, Current - Continuous Drain (Id) @ 25°C: 500mA, Input Capacitance (Ciss) (Max) @ Vds: 46pF @ 10V, Rds On (Max) @ Id, Vgs: 630mOhm @ 200mA, 5V, Gate Charge (Qg) (Max) @ Vgs: 1.23nC @ 4V, FET Feature: Logic Level Gate, 1.5V Drive, Vgs(th) (Max) @ Id: 1V @ 1mA, Supplier Device Package: US6.

Weitere Produktangebote SSM6N43FU,LF nach Preis ab 0.1 EUR bis 0.56 EUR

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SSM6N43FU,LF SSM6N43FU,LF Hersteller : Toshiba Semiconductor and Storage docget.jsp?did=407&prodName=SSM6N43FU Description: MOSFET 2N-CH 20V 0.5A US6
Packaging: Cut Tape (CT)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 200mW
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 500mA
Input Capacitance (Ciss) (Max) @ Vds: 46pF @ 10V
Rds On (Max) @ Id, Vgs: 630mOhm @ 200mA, 5V
Gate Charge (Qg) (Max) @ Vgs: 1.23nC @ 4V
FET Feature: Logic Level Gate, 1.5V Drive
Vgs(th) (Max) @ Id: 1V @ 1mA
Supplier Device Package: US6
auf Bestellung 13361 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
33+0.55 EUR
53+0.34 EUR
100+0.21 EUR
500+0.16 EUR
1000+0.14 EUR
Mindestbestellmenge: 33
Im Einkaufswagen  Stück im Wert von  UAH
SSM6N43FU,LF SSM6N43FU,LF Hersteller : Toshiba 1CC6DEC57A6EF4E6FAB2AB96366A3CB7497F50061BDE1131E466DC6693E63EA8.pdf MOSFETs Small-signal MOSFET
auf Bestellung 42410 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
6+0.56 EUR
10+0.34 EUR
100+0.22 EUR
500+0.16 EUR
1000+0.14 EUR
3000+0.11 EUR
6000+0.1 EUR
Mindestbestellmenge: 6
Im Einkaufswagen  Stück im Wert von  UAH