SSM6N43FU,LF Toshiba Semiconductor and Storage
Hersteller: Toshiba Semiconductor and Storage
Description: MOSFET 2N-CH 20V 0.5A US6
Packaging: Tape & Reel (TR)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 200mW
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 500mA
Input Capacitance (Ciss) (Max) @ Vds: 46pF @ 10V
Rds On (Max) @ Id, Vgs: 630mOhm @ 200mA, 5V
Gate Charge (Qg) (Max) @ Vgs: 1.23nC @ 4V
FET Feature: Logic Level Gate, 1.5V Drive
Vgs(th) (Max) @ Id: 1V @ 1mA
Supplier Device Package: US6
| Anzahl | Privatkunde |
|---|---|
| 3000+ | 0.13 EUR |
| 6000+ | 0.12 EUR |
| 9000+ | 0.12 EUR |
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Technische Details SSM6N43FU,LF Toshiba Semiconductor and Storage
Description: MOSFET 2N-CH 20V 0.5A US6, Packaging: Tape & Reel (TR), Package / Case: 6-TSSOP, SC-88, SOT-363, Mounting Type: Surface Mount, Configuration: 2 N-Channel (Dual), Operating Temperature: 150°C (TJ), Technology: MOSFET (Metal Oxide), Power - Max: 200mW, Drain to Source Voltage (Vdss): 20V, Current - Continuous Drain (Id) @ 25°C: 500mA, Input Capacitance (Ciss) (Max) @ Vds: 46pF @ 10V, Rds On (Max) @ Id, Vgs: 630mOhm @ 200mA, 5V, Gate Charge (Qg) (Max) @ Vgs: 1.23nC @ 4V, FET Feature: Logic Level Gate, 1.5V Drive, Vgs(th) (Max) @ Id: 1V @ 1mA, Supplier Device Package: US6.
Weitere Produktangebote SSM6N43FU,LF nach Preis ab 0.17 EUR bis 0.65 EUR
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SSM6N43FU,LF | Toshiba Semiconductor and Storage |
Description: MOSFET 2N-CH 20V 0.5A US6 Packaging: Cut Tape (CT) Package / Case: 6-TSSOP, SC-88, SOT-363 Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 200mW Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 500mA Input Capacitance (Ciss) (Max) @ Vds: 46pF @ 10V Rds On (Max) @ Id, Vgs: 630mOhm @ 200mA, 5V Gate Charge (Qg) (Max) @ Vgs: 1.23nC @ 4V FET Feature: Logic Level Gate, 1.5V Drive Vgs(th) (Max) @ Id: 1V @ 1mA Supplier Device Package: US6 |
auf Bestellung 13361 Stücke: Lieferzeit 10-14 Tag (e) |
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| SSM6N43FU,LF |
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Hersteller: Toshiba Semiconductor and Storage
Description: MOSFET 2N-CH 20V 0.5A US6
Packaging: Cut Tape (CT)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 200mW
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 500mA
Input Capacitance (Ciss) (Max) @ Vds: 46pF @ 10V
Rds On (Max) @ Id, Vgs: 630mOhm @ 200mA, 5V
Gate Charge (Qg) (Max) @ Vgs: 1.23nC @ 4V
FET Feature: Logic Level Gate, 1.5V Drive
Vgs(th) (Max) @ Id: 1V @ 1mA
Supplier Device Package: US6
Description: MOSFET 2N-CH 20V 0.5A US6
Packaging: Cut Tape (CT)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 200mW
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 500mA
Input Capacitance (Ciss) (Max) @ Vds: 46pF @ 10V
Rds On (Max) @ Id, Vgs: 630mOhm @ 200mA, 5V
Gate Charge (Qg) (Max) @ Vgs: 1.23nC @ 4V
FET Feature: Logic Level Gate, 1.5V Drive
Vgs(th) (Max) @ Id: 1V @ 1mA
Supplier Device Package: US6
auf Bestellung 13361 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 33+ | 0.65 EUR |
| 53+ | 0.4 EUR |
| 100+ | 0.25 EUR |
| 500+ | 0.19 EUR |
| 1000+ | 0.17 EUR |